DE69902412T2 - Oberflächenemittierender Laser - Google Patents

Oberflächenemittierender Laser

Info

Publication number
DE69902412T2
DE69902412T2 DE69902412T DE69902412T DE69902412T2 DE 69902412 T2 DE69902412 T2 DE 69902412T2 DE 69902412 T DE69902412 T DE 69902412T DE 69902412 T DE69902412 T DE 69902412T DE 69902412 T2 DE69902412 T2 DE 69902412T2
Authority
DE
Germany
Prior art keywords
emitting laser
surface emitting
laser
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69902412T
Other languages
English (en)
Other versions
DE69902412D1 (de
Inventor
Atsushi Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Application granted granted Critical
Publication of DE69902412D1 publication Critical patent/DE69902412D1/de
Publication of DE69902412T2 publication Critical patent/DE69902412T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
DE69902412T 1998-02-04 1999-02-04 Oberflächenemittierender Laser Expired - Lifetime DE69902412T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2353098 1998-02-04

Publications (2)

Publication Number Publication Date
DE69902412D1 DE69902412D1 (de) 2002-09-12
DE69902412T2 true DE69902412T2 (de) 2003-04-10

Family

ID=12113016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69902412T Expired - Lifetime DE69902412T2 (de) 1998-02-04 1999-02-04 Oberflächenemittierender Laser

Country Status (3)

Country Link
US (1) US6487225B2 (de)
EP (1) EP0935319B1 (de)
DE (1) DE69902412T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332816A (ja) * 2000-05-19 2001-11-30 Fuji Photo Film Co Ltd 半導体レーザ素子
US20020159491A1 (en) * 2001-04-26 2002-10-31 Wenbin Jiang Surface emitting laser
WO2005043695A2 (en) * 2003-10-20 2005-05-12 Binoptics Corporation Surface emitting and receiving photonic device
US7598527B2 (en) * 2004-01-20 2009-10-06 Binoptics Corporation Monitoring photodetector for integrated photonic devices
CN102013631B (zh) * 2005-08-25 2012-07-04 宾奥普迪克斯股份有限公司 形成在单个薄片上的半导体激光器谐振腔
JP2008053268A (ja) * 2006-08-22 2008-03-06 Opnext Japan Inc 通信用半導体レーザの製造方法、通信用半導体レーザおよび光送信モジュール
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
EP2043210A3 (de) * 2007-09-28 2010-12-22 OSRAM Opto Semiconductors GmbH Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
JP2010109139A (ja) * 2008-10-30 2010-05-13 Hitachi Ltd 半導体レーザ素子
DE102008061152B4 (de) * 2008-12-09 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7972112B2 (en) * 2009-10-29 2011-07-05 General Electric Company Systems and methods for determining the angular position of a wind turbine rotor
JP5150666B2 (ja) * 2010-03-04 2013-02-20 株式会社東芝 半導体レーザ装置
WO2016098273A1 (ja) * 2014-12-19 2016-06-23 ソニー株式会社 活性層構造、半導体発光素子および表示装置
DE102018105080A1 (de) * 2018-03-06 2019-09-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
CN111404024B (zh) * 2020-03-27 2021-05-11 中国科学院半导体研究所 具有复合波导层的氮化镓基近紫外激光器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136089A (ja) 1985-12-10 1987-06-19 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US5467364A (en) 1992-02-05 1995-11-14 Mitsui Petrochemical Industries, Ltd. Semiconductor laser element and laser device using the same element
CA2138912C (en) 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device
CA2203117C (en) * 1994-10-18 2001-12-25 Atsushi Okubo Semiconductor laser device

Also Published As

Publication number Publication date
US20020154664A1 (en) 2002-10-24
EP0935319B1 (de) 2002-08-07
US6487225B2 (en) 2002-11-26
EP0935319A3 (de) 1999-10-06
EP0935319A2 (de) 1999-08-11
DE69902412D1 (de) 2002-09-12

Similar Documents

Publication Publication Date Title
DE69711878D1 (de) Oberflächenemittierender Laser
FR2761822B1 (fr) Laser semiconducteur a emission de surface
DE69522778D1 (de) Oberflächenemittierender Laser
DE69817099D1 (de) Laserdrucker
DE69907569D1 (de) Laserlichtquelle
DE69601698T2 (de) Oberflächen-emittierender Halbleiterlaser
DE29805392U1 (de) Optoelektronische Baugruppe
DE59910695D1 (de) Wellenlängenstabilisierte Laseranordnung
DE69801974D1 (de) Halbleiterlaser
DE69902412D1 (de) Oberflächenemittierender Laser
FI982843A (fi) Laserlähetin
DE69904265T2 (de) Halbleiterlaser
DE69703261T2 (de) Oberflächenemittierende Laser
DE69610522T2 (de) Oberflächenemittierender Laser mit verbessertem Wirkungsgrad
DE69922427D1 (de) Halbleiterlaser
DE69905197D1 (de) Halbleiterlaser
DE69931097D1 (de) Oberflächenemittierender Halbleiterlaser mit vertikalem Resonator
DE69924544D1 (de) Faserlaser
DE60101887D1 (de) Oberflächenemittierender Halbleiterlaser
DE69934504D1 (de) Halbleiterlaser
DE69928801D1 (de) Stabilisierte Laserquelle
DE69917519D1 (de) Laserstrahlemittierendes Gerät
DE69921640D1 (de) Seitlich gepumpter laser
DE29814827U1 (de) Lichtspot
DE29813808U1 (de) Lichtschacht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition