SE9702629D0 - Laserdiod av typen med begravd heterostruktur - Google Patents

Laserdiod av typen med begravd heterostruktur

Info

Publication number
SE9702629D0
SE9702629D0 SE9702629A SE9702629A SE9702629D0 SE 9702629 D0 SE9702629 D0 SE 9702629D0 SE 9702629 A SE9702629 A SE 9702629A SE 9702629 A SE9702629 A SE 9702629A SE 9702629 D0 SE9702629 D0 SE 9702629D0
Authority
SE
Sweden
Prior art keywords
layers
type
thin
output power
current
Prior art date
Application number
SE9702629A
Other languages
English (en)
Other versions
SE9702629L (sv
SE511719C2 (sv
Inventor
Bjoern Stoltz
Olof Sahlen
Ulf Oehlander
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9702629A priority Critical patent/SE511719C2/sv
Publication of SE9702629D0 publication Critical patent/SE9702629D0/sv
Priority to TW087101945A priority patent/TW399343B/zh
Priority to US09/108,971 priority patent/US6222865B1/en
Priority to PCT/SE1998/001315 priority patent/WO1999001019A2/en
Priority to CA002294808A priority patent/CA2294808A1/en
Priority to JP2000500808A priority patent/JP2001509638A/ja
Priority to EP98932697A priority patent/EP1019993B1/en
Priority to AU82517/98A priority patent/AU8251798A/en
Priority to DE69826502T priority patent/DE69826502T2/de
Priority to KR10-1999-7012535A priority patent/KR100404307B1/ko
Priority to CN98806913A priority patent/CN1261985A/zh
Publication of SE9702629L publication Critical patent/SE9702629L/sv
Publication of SE511719C2 publication Critical patent/SE511719C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
SE9702629A 1997-07-04 1997-07-04 Begravd heterostrukturlaser med ströminneslutande skikt SE511719C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9702629A SE511719C2 (sv) 1997-07-04 1997-07-04 Begravd heterostrukturlaser med ströminneslutande skikt
TW087101945A TW399343B (en) 1997-07-04 1998-02-12 A laser diode of the type having a buried heterostructure
US09/108,971 US6222865B1 (en) 1997-07-04 1998-07-02 Laser diode of the type having a buried heterostructure
CN98806913A CN1261985A (zh) 1997-07-04 1998-07-03 具有掩埋异质结构类型的激光二极管
CA002294808A CA2294808A1 (en) 1997-07-04 1998-07-03 A laser diode of the type having a buried heterostructure
PCT/SE1998/001315 WO1999001019A2 (en) 1997-07-04 1998-07-03 A laser diode of the type having a buried heterostructure
JP2000500808A JP2001509638A (ja) 1997-07-04 1998-07-03 埋込みヘテロ構造を有する型のレーザーダイオード
EP98932697A EP1019993B1 (en) 1997-07-04 1998-07-03 A laser diode of the type having a buried heterostructure
AU82517/98A AU8251798A (en) 1997-07-04 1998-07-03 A laser diode of the type having a buried heterostructure
DE69826502T DE69826502T2 (de) 1997-07-04 1998-07-03 Laserdiode mit vergrabener heterostruktur
KR10-1999-7012535A KR100404307B1 (ko) 1997-07-04 1998-07-03 매립된 헤테로 구조를 갖는 형태의 레이저 다이오드

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9702629A SE511719C2 (sv) 1997-07-04 1997-07-04 Begravd heterostrukturlaser med ströminneslutande skikt

Publications (3)

Publication Number Publication Date
SE9702629D0 true SE9702629D0 (sv) 1997-07-04
SE9702629L SE9702629L (sv) 1999-01-05
SE511719C2 SE511719C2 (sv) 1999-11-15

Family

ID=20407677

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9702629A SE511719C2 (sv) 1997-07-04 1997-07-04 Begravd heterostrukturlaser med ströminneslutande skikt

Country Status (11)

Country Link
US (1) US6222865B1 (sv)
EP (1) EP1019993B1 (sv)
JP (1) JP2001509638A (sv)
KR (1) KR100404307B1 (sv)
CN (1) CN1261985A (sv)
AU (1) AU8251798A (sv)
CA (1) CA2294808A1 (sv)
DE (1) DE69826502T2 (sv)
SE (1) SE511719C2 (sv)
TW (1) TW399343B (sv)
WO (1) WO1999001019A2 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6819695B1 (en) * 2000-01-07 2004-11-16 Triquint Technology Holding Co Dopant diffusion barrier layer for use in III-V structures
GB0126642D0 (en) * 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance
JP4142532B2 (ja) * 2003-09-02 2008-09-03 シャープ株式会社 光学式速度計、変位情報測定装置および搬送処理装置
US7919349B2 (en) * 2008-02-22 2011-04-05 Alcatel-Lucent Usa Inc. Photonic integration scheme
TWI416764B (zh) * 2010-05-06 2013-11-21 發光二極體
US20150125510A1 (en) 2011-08-22 2015-05-07 Sean R. Kirkpatrick Drug delivery system and method of manufacturing thereof
WO2021022476A1 (zh) * 2019-08-06 2021-02-11 华为技术有限公司 一种波导结构、集成光芯片及实现电学隔离的方法
CN111313233B (zh) * 2020-03-04 2021-07-27 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用
CN113258442B (zh) * 2021-07-14 2021-11-09 华芯半导体研究院(北京)有限公司 垂直腔面发射激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168981A (ja) 1985-01-23 1986-07-30 Hitachi Ltd 半導体レ−ザ装置
JPH0828554B2 (ja) 1989-10-20 1996-03-21 三菱電機株式会社 半導体レーザ及びその製造方法
US5179040A (en) 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JP2718342B2 (ja) 1993-05-28 1998-02-25 日本電気株式会社 半導体レーザ及びその製造方法
US5847415A (en) * 1995-03-31 1998-12-08 Nec Corporation Light emitting device having current blocking structure

Also Published As

Publication number Publication date
DE69826502D1 (de) 2004-10-28
JP2001509638A (ja) 2001-07-24
US6222865B1 (en) 2001-04-24
DE69826502T2 (de) 2005-09-29
KR20010020581A (ko) 2001-03-15
AU8251798A (en) 1999-01-25
WO1999001019A3 (en) 1999-04-01
TW399343B (en) 2000-07-21
WO1999001019A2 (en) 1999-01-14
KR100404307B1 (ko) 2003-11-03
SE9702629L (sv) 1999-01-05
CA2294808A1 (en) 1999-01-14
EP1019993A2 (en) 2000-07-19
SE511719C2 (sv) 1999-11-15
EP1019993B1 (en) 2004-09-22
CN1261985A (zh) 2000-08-02

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