JP2006286870A - 半導体レーザおよびそれを用いた光通信システム - Google Patents
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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Abstract
【解決手段】 第一導電型GaAs基板上1に少なくとも第一導電型InAlGaPクラッド層3、InAlGaP下部光ガイド層4、InGaPもしくはInAlGaPからなる量子井戸活性層5、InAlGaP上部光ガイド層6、この上部光ガイド層6側に形成されたノンドープ領域7を含む第二導電型InAlGaP上部第一クラッド層7および8、第二導電型InGaPヘテロバッファ層11、第二導電型GaAsキャップ層12が順次積層されてなる赤色半導体レーザにおいて、上部第一クラッド層7および8と上部光ガイド層6との界面における第二導電型キャリア濃度を、4×1016cm-3以下の値とする。
【選択図】 図1
Description
前記第二導電型InAlGaP上部クラッド層を上部第一クラッド層として、その上に(間に何らかの層が入ってもよい)第二導電型InAlGaP上部第二クラッド層が設けられ、
この第二導電型InAlGaP上部第二クラッド層、前記第二導電型InGaPヘテロバッファ層、および前記第二導電型GaAsキャップ層がリッジ状に形成された上で、
このリッジ状部分の両側に、電流狭窄用の第一導電型GaAs埋め込み層が形成されていることが特に好ましい。
2 n型GaAsバッファ層
3 n型In0.49(Al0.7Ga0.3)0.51P下部クラッド層
4 ノンドープIn0.49(Al0.5Ga0.5)0.51P下部光ガイド層
5 GaInP多重量子井戸活性層
6 ノンドープIn0.49(Al0.5Ga0.5)0.51P上部光ガイド層
7 ノンドープまたはp型In0.49(Al0.7Ga0.3)0.51P上部クラッド層
8 p型In0.49(Al0.7Ga0.3)0.51P上部クラッド層
9 p型GaInPエッチングストップ層
10 p型In0.49(Al0.7Ga0.3)0.51P上部第二クラッド層
11 p型In0.49Ga0.51Pヘテロバッファ層
12 p型GaAsキャップ層
13 n側GaAs電流ブロック層
14 p型GaAsコンタクト層
15 p電極
16 n電極
21 n型GaAs基板
22 n型GaAsバッファ層
23 n型In0.49(Al0.7Ga0.3)0.51P下部クラッド層
24 ノンドープIn0.49(Al0.5Ga0.5)0.51P下部光ガイド層
25 GaInP多重量子井戸活性層
26 ノンドープIn0.49(Al0.5Ga0.5)0.51P上部光ガイド層
27 ノンドープまたはp型In0.49(Al0.7Ga0.3)0.51P上部クラッド層
28 p型In0.49(Al0.7Ga0.3)0.51P上部クラッド層
29 p型In0.49Ga0.51Pヘテロバッファ層
30 p型GaAsコンタクト層
31 SiO2絶縁膜
32 p電極
33 n電極
41 送信部
42 受信部
43 GI-POF
44 発光素子
45 受光素子
46 収束レンズ
Claims (9)
- 第一導電型GaAs基板上に少なくとも第一導電型InAlGaPクラッド層、InAlGaP下部光ガイド層、InGaPもしくはInAlGaPからなる量子井戸活性層、InAlGaP上部光ガイド層、この上部光ガイド層側に形成されたノンドープ領域を含む第二導電型InAlGaP上部クラッド層、第二導電型InGaPヘテロバッファ層、第二導電型GaAsキャップ層が順次積層されてなる赤色半導体レーザにおいて、前記上部クラッド層と上部光ガイド層との界面における第二導電型キャリア濃度が4×1016cm-3以下であることを特徴とする半導体レーザ。
- 前記第二導電型上部クラッド層内において第二導電型キャリア濃度が4×1016cm-3となっている領域から、該上部クラッド層と上部光ガイド層との界面までの距離が70nm以下であることを特徴とする請求項1記載の半導体レーザ。
- 前記第二導電型キャリアがZnであることを特徴とする請求項1または2記載の半導体レーザ。
- 前記第二導電型InAlGaP上部クラッド層においてZn濃度が9×1017〜2×1018cm-3となる領域が、層厚の半分以上を占めていることを特徴とする請求項3記載の半導体レーザ。
- 前記第二導電型GaAsキャップ層のZn濃度が、7×1018〜2×1019cm-3であることを特徴とする請求項4記載の半導体レーザ。
- 前記第二導電型キャリアがMgであることを特徴とする請求項1または2記載の半導体レーザ。
- 前記第二導電型InAlGaP上部クラッド層を上部第一クラッド層として、その上に第二導電型InAlGaP上部第二クラッド層が設けられ、
この第二導電型InAlGaP上部第二クラッド層、前記第二導電型InGaPヘテロバッファ層、および前記第二導電型GaAsキャップ層がリッジ状に形成された上で、
このリッジ状部分の両側に、電流狭窄用の第一導電型GaAs埋め込み層が形成されていることを特徴とする請求項1から6いずれか1項記載の半導体レーザ。 - 発光幅が70μm以下で、かつマルチモード発振する構成を有することを特徴とする請求項1から7いずれか1項記載の半導体レーザ。
- 信号光伝送用にポリメタクリル酸系化合物を含むGraded Index型プラスチック光ファイバーが用いられた光通信システムにおいて、信号光源として請求項1から8いずれか1項記載の半導体レーザが用いられたことを特徴とする光通信システム。
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JP2005103810A JP2006286870A (ja) | 2005-03-31 | 2005-03-31 | 半導体レーザおよびそれを用いた光通信システム |
US11/393,713 US20060222029A1 (en) | 2005-03-31 | 2006-03-31 | Semiconductor laser and optical communication system using the same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101449794B1 (ko) * | 2012-01-18 | 2014-10-13 | 한국과학기술원 | 광역학 치료용 플렉서블 광소자 제조방법 및 이에 따라 제조된 플렉서블 광소자 |
JP2017005102A (ja) * | 2015-06-10 | 2017-01-05 | 三菱電機株式会社 | 半導体レーザ装置 |
JP2019169584A (ja) * | 2018-03-23 | 2019-10-03 | ローム株式会社 | 半導体レーザ装置 |
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JP2000286507A (ja) * | 1999-01-29 | 2000-10-13 | Sharp Corp | 半導体レーザ素子及びその製造方法 |
JP2002237643A (ja) * | 2001-02-09 | 2002-08-23 | Mitsui Chemicals Inc | 半導体レーザ光源 |
JP2003051643A (ja) * | 2001-08-03 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP2003110200A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
JP2004047962A (ja) * | 2002-05-23 | 2004-02-12 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体装置 |
JP2004111526A (ja) * | 2002-09-17 | 2004-04-08 | Fuji Photo Film Co Ltd | 光通信用モジュール |
JP2004214289A (ja) * | 2002-12-27 | 2004-07-29 | Opto Device:Kk | 半導体レーザ素子 |
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JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
JPH05291686A (ja) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
US5841797A (en) * | 1994-06-28 | 1998-11-24 | Ventrudo; Brian F. | Apparatus for stabilizing multiple laser sources and their application |
US6267915B1 (en) * | 1996-09-12 | 2001-07-31 | University Of Florida | Production method for objects with radially-varying properties |
JP2003078199A (ja) * | 2001-09-03 | 2003-03-14 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
JP2004055975A (ja) * | 2002-07-23 | 2004-02-19 | Sharp Corp | 半導体発光装置およびその製造方法 |
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- 2005-03-31 JP JP2005103810A patent/JP2006286870A/ja active Pending
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2006
- 2006-03-31 US US11/393,713 patent/US20060222029A1/en not_active Abandoned
Patent Citations (7)
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JP2000286507A (ja) * | 1999-01-29 | 2000-10-13 | Sharp Corp | 半導体レーザ素子及びその製造方法 |
JP2002237643A (ja) * | 2001-02-09 | 2002-08-23 | Mitsui Chemicals Inc | 半導体レーザ光源 |
JP2003110200A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
JP2003051643A (ja) * | 2001-08-03 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP2004047962A (ja) * | 2002-05-23 | 2004-02-12 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体装置 |
JP2004111526A (ja) * | 2002-09-17 | 2004-04-08 | Fuji Photo Film Co Ltd | 光通信用モジュール |
JP2004214289A (ja) * | 2002-12-27 | 2004-07-29 | Opto Device:Kk | 半導体レーザ素子 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101449794B1 (ko) * | 2012-01-18 | 2014-10-13 | 한국과학기술원 | 광역학 치료용 플렉서블 광소자 제조방법 및 이에 따라 제조된 플렉서블 광소자 |
JP2017005102A (ja) * | 2015-06-10 | 2017-01-05 | 三菱電機株式会社 | 半導体レーザ装置 |
JP2019169584A (ja) * | 2018-03-23 | 2019-10-03 | ローム株式会社 | 半導体レーザ装置 |
JP7114292B2 (ja) | 2018-03-23 | 2022-08-08 | ローム株式会社 | 半導体レーザ装置 |
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