DE3854423D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3854423D1
DE3854423D1 DE3854423T DE3854423T DE3854423D1 DE 3854423 D1 DE3854423 D1 DE 3854423D1 DE 3854423 T DE3854423 T DE 3854423T DE 3854423 T DE3854423 T DE 3854423T DE 3854423 D1 DE3854423 D1 DE 3854423D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854423T
Other languages
English (en)
Other versions
DE3854423T2 (de
Inventor
Saburo Yamamoto
Masahiro Hosoda
Kazuaki Sasaki
Masaki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62322600A external-priority patent/JPH0680868B2/ja
Priority claimed from JP62326387A external-priority patent/JPH0680869B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3854423D1 publication Critical patent/DE3854423D1/de
Publication of DE3854423T2 publication Critical patent/DE3854423T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE3854423T 1987-12-18 1988-12-16 Halbleiterlaservorrichtung. Expired - Fee Related DE3854423T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62322600A JPH0680868B2 (ja) 1987-12-18 1987-12-18 半導体レーザ素子
JP62326387A JPH0680869B2 (ja) 1987-12-22 1987-12-22 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE3854423D1 true DE3854423D1 (de) 1995-10-12
DE3854423T2 DE3854423T2 (de) 1996-04-18

Family

ID=26570872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854423T Expired - Fee Related DE3854423T2 (de) 1987-12-18 1988-12-16 Halbleiterlaservorrichtung.

Country Status (3)

Country Link
US (1) US4977568A (de)
EP (1) EP0321294B1 (de)
DE (1) DE3854423T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170404A (en) * 1989-09-04 1992-12-08 Hitachi, Ltd. Semiconductor laser device suitable for optical communications systems drive
FR2675634A1 (fr) * 1991-04-16 1992-10-23 France Telecom Dispositif optoelectronique a tres faible capacite parasite.
JPH04317384A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体発光装置
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
GB2308732A (en) * 1995-12-29 1997-07-02 Sharp Kk A semiconductor laser device
JP2000012975A (ja) * 1998-06-23 2000-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
JP4422597B2 (ja) * 2004-12-02 2010-02-24 富士通株式会社 半導体レーザ及びその製造方法
US8385379B2 (en) * 2010-01-07 2013-02-26 Furukawa Electric Co., Ltd Optical semiconductor device and pumping light source for optical fiber amplifier

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240958A (en) * 1975-09-26 1977-03-30 Matsushita Electric Ind Co Ltd Electron discharge material
JPS5241107A (en) * 1975-09-29 1977-03-30 Mitsubishi Heavy Ind Ltd Process for strengthening precipitation hardening type metallic materi als
JPS5248066A (en) * 1975-10-15 1977-04-16 Matsushita Electric Works Ltd Circuit breaker
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6057988A (ja) * 1983-09-09 1985-04-03 Nec Corp 半導体レ−ザ
JPS60247985A (ja) * 1984-05-23 1985-12-07 Nec Corp 分布帰還形半導体レ−ザ
JPS6174386A (ja) * 1984-09-19 1986-04-16 Sharp Corp 半導体素子
JPS61216495A (ja) * 1985-03-22 1986-09-26 Fujitsu Ltd 半導体発光装置及びその製造方法
JPS61236189A (ja) * 1985-04-11 1986-10-21 Sharp Corp 半導体レ−ザ素子
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS62112391A (ja) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レーザ
DE3788841T2 (de) * 1986-10-07 1994-05-05 Sharp Kk Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.

Also Published As

Publication number Publication date
EP0321294A3 (en) 1989-10-18
DE3854423T2 (de) 1996-04-18
EP0321294B1 (de) 1995-09-06
US4977568A (en) 1990-12-11
EP0321294A2 (de) 1989-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee