JPS6057988A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS6057988A
JPS6057988A JP16593283A JP16593283A JPS6057988A JP S6057988 A JPS6057988 A JP S6057988A JP 16593283 A JP16593283 A JP 16593283A JP 16593283 A JP16593283 A JP 16593283A JP S6057988 A JPS6057988 A JP S6057988A
Authority
JP
Japan
Prior art keywords
layer
groove
semiconductor
type
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16593283A
Other languages
English (en)
Inventor
Masahiko Kawaratani
瓦谷　正彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16593283A priority Critical patent/JPS6057988A/ja
Publication of JPS6057988A publication Critical patent/JPS6057988A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体基板（以下、基板と記す）に溝を持つ半
導体レーザの改良に関するものである。
上記半導体レーザの一般的な原理構造の断面図を第１図
に示す。
第１図において、１はｎ型半導体基板、２はｎ型半導体
層（尚、１よシ禁止帯巾が太い。）、３は活性層、４は
Ｐ型半導体層（尚、１よシ禁止帯巾が大きい。）、５は
ｎ型低抵抗層、６はＰ型拡散層、７及び８は電極である
。
上記層構造の場合、基板上の溝以外への電流注入による
光は、基板に吸収され、外部量子効率が悪いという欠点
を有する。
本発明の目的は上記従来構造素子の持つ難点を軽減し、
低注入電流で良好な外部微分量子効率を得られる半導体
レーザを提供する。
本発明によれば半導体基板上に溝を持つ半導体レーザに
おいて、溝上部に基板と同一導電型の第一半導体層、動
性層、基板と反対導電型の第二半導体層及び拡散層一部
をメサ型状にすること、上記メサ型状部を基板と同一導
電型の半導体材料で埋め込んだ低抵抗層で形成されてな
ることを特徴とする半導体レーザが得られる。
以下、本発明につき、図面を参照して説明する。
第２図に本発明の一実施例について示す。例えば、溝を
持つｎ型ＧａＡｓ基板１１上に、液相エビタキシキル法
にて、ｎ型Ｇａ、−ｘＡｌｘＡｓ導波路層１２、ＧａＡ
ｓ活性層１３、Ｐ　ｍＧ　ａ　１−　Ａ　ｌｘ　Ａ　ｓ
層１４を順次形成する。次に、選択エツチングで基板の
溝より少し広くメサ形状に残した後、液相エピタキシャ
ル法でｎ型ＧａＡｓ層１５を埋め込む。上記１５層と１
４層の中程までＺｎを拡散してＰ型拡散層１６を形成す
る。電極１７．１８を両面蒸着することにより半導体レ
ーザ素子ができる。
第２図は、第１図に比べ活性層をメサ形状内に置き、活
性層下に溝状導波路層を有することにより、無駄な活性
層を取り除き、損失を減らすと同時に溝状導波路を有す
ることにより、低電流で光出力を増大できる構造になっ
ている。この層構造におＧて、Ｐ型の基板を用いた場合
、上記各層の導電型を反対にすれば、本発明の半導体レ
ーザ素子に形成できる。さらに、本発明の半導体レーザ
はどのような半導体材料にも適用できる。本発明は活性
層幅を狭く埋め込みにしたことにより、溝の外部による
吸収損失が少なくなる。１ｆｃ、溝状の導波路層を有す
るゆえに、低注入電流で外部微分量子効率の優れた半導
体レーザを得ることができる。
【図面の簡単な説明】
第１図は、半導体基板に溝を持つ従来の半導体レーザを
示す断面図。、第２図は本発明による一実施例を示す断
面図。 １．１１・・・・・・ｎ型ＧａＡｓ基板、２．１２・・
・・・・ｎ型Ｇａ、−ｘＡＪｘＡｓ層、３．１３・・・
・・・ＧａＡｓ活性層、４　、１４−−−−・・Ｐ型Ｑ
ａ、−ｘｋｌｘｋｓ層、５．１５・・・・・・ｎ型Ｇａ
Ａｓ低抵抗層、６．１６・旧・・Ｐ型拡散層、７．１７
及び８．１８・・・・・・金属電極。 々）８に冒＼ｆ　＼

Claims (1)

    【特許請求の範囲】
  1. 半導体基板上に溝を有する半導体レーザにおいて、前記
    溝上部に基板と同一導電型の第一半導体層、活性層、基
    板と反対導電型の第二半導体層及び拡散層一部をメサ型
    状にすること、前記メサ型状部を基板と同一導電型の半
    導体材料で埋め込んだ低抵抗層で形成されてなることを
    特徴とする半導体レーザ。
JP16593283A 1983-09-09 1983-09-09 半導体レ−ザ Pending JPS6057988A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16593283A JPS6057988A (ja) 1983-09-09 1983-09-09 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16593283A JPS6057988A (ja) 1983-09-09 1983-09-09 半導体レ−ザ

Publications (1)

Publication Number Publication Date
JPS6057988A true JPS6057988A (ja) 1985-04-03

Family

ID=15821748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16593283A Pending JPS6057988A (ja) 1983-09-09 1983-09-09 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS6057988A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198656A2 (en) * 1985-04-11 1986-10-22 Sharp Kabushiki Kaisha A semiconductor laser device
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
JPS6381884A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 半導体発光装置
EP0264225A2 (en) * 1986-10-07 1988-04-20 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
EP0321294A2 (en) * 1987-12-18 1989-06-21 Sharp Kabushiki Kaisha A semiconductor laser device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198656A2 (en) * 1985-04-11 1986-10-22 Sharp Kabushiki Kaisha A semiconductor laser device
EP0198656A3 (en) * 1985-04-11 1988-01-07 Sharp Kabushiki Kaisha A semiconductor laser device
US4754462A (en) * 1985-04-11 1988-06-28 Sharp Kabushiki Kaisha Semiconductor laser device with a V-channel and a mesa
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
EP0209372A3 (en) * 1985-07-17 1988-05-04 Sharp Kabushiki Kaisha A semiconductor laser device
JPS6381884A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 半導体発光装置
JP2659937B2 (ja) * 1986-09-26 1997-09-30 株式会社東芝 半導体発光装置
EP0264225A2 (en) * 1986-10-07 1988-04-20 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
EP0321294A2 (en) * 1987-12-18 1989-06-21 Sharp Kabushiki Kaisha A semiconductor laser device

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