DE3876043D1 - Halbleiterlaser-vorrichtung. - Google Patents

Halbleiterlaser-vorrichtung.

Info

Publication number
DE3876043D1
DE3876043D1 DE8888308117T DE3876043T DE3876043D1 DE 3876043 D1 DE3876043 D1 DE 3876043D1 DE 8888308117 T DE8888308117 T DE 8888308117T DE 3876043 T DE3876043 T DE 3876043T DE 3876043 D1 DE3876043 D1 DE 3876043D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888308117T
Other languages
English (en)
Other versions
DE3876043T2 (de
Inventor
Hidenori Kawanishi
Masahiro Yamaguchi
Hiroshi Hayashi
Taiji Morimoto
Shinji Kaneiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3876043D1 publication Critical patent/DE3876043D1/de
Publication of DE3876043T2 publication Critical patent/DE3876043T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8888308117T 1987-09-04 1988-09-01 Halbleiterlaser-vorrichtung. Expired - Lifetime DE3876043T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222766A JPH0671121B2 (ja) 1987-09-04 1987-09-04 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE3876043D1 true DE3876043D1 (de) 1992-12-24
DE3876043T2 DE3876043T2 (de) 1993-03-25

Family

ID=16787561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888308117T Expired - Lifetime DE3876043T2 (de) 1987-09-04 1988-09-01 Halbleiterlaser-vorrichtung.

Country Status (4)

Country Link
US (1) US4879725A (de)
EP (1) EP0306314B1 (de)
JP (1) JPH0671121B2 (de)
DE (1) DE3876043T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
US5228047A (en) * 1990-09-21 1993-07-13 Sharp Kabushiki Kaisha Semiconductor laser device and a method for producing the same
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
CN100463312C (zh) * 2006-11-09 2009-02-18 何建军 V型耦合腔波长可切换半导体激光器
CN112305667B (zh) * 2019-07-29 2021-09-14 中国科学院上海微系统与信息技术研究所 光波导器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
JPS5940592A (ja) * 1982-08-30 1984-03-06 Sharp Corp 半導体レ−ザ素子
JPS6195593A (ja) * 1984-10-16 1986-05-14 Sharp Corp 半導体レ−ザ素子
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS6348888A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS63263790A (ja) * 1987-04-22 1988-10-31 Mitsubishi Electric Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0306314B1 (de) 1992-11-19
JPH0671121B2 (ja) 1994-09-07
EP0306314A3 (en) 1990-08-22
EP0306314A2 (de) 1989-03-08
DE3876043T2 (de) 1993-03-25
JPS6465893A (en) 1989-03-13
US4879725A (en) 1989-11-07

Similar Documents

Publication Publication Date Title
DE3787769T2 (de) Halbleiterlaservorrichtung.
DE68915673T2 (de) Halbleiterlaser-Vorrichtung.
DE68918884T2 (de) Halbleiterlaser-Vorrichtung.
DE3786339T2 (de) Halbleiterlaservorrichtung.
DE3750995T2 (de) Halbleiterlaservorrichtung.
DE3873689T2 (de) Halbleiterlaser.
DE3884503T2 (de) Halbleiterlaser.
DE68912512D1 (de) Halbleiterlaser-Vorrichtung.
DE68910492D1 (de) Halbleiterlaservorrichtung.
DE3789832D1 (de) Halbleiterlaser-Vorrichtung.
DE3776186D1 (de) Halbleiterlaser-vorrichtung.
DE69009266T2 (de) Halbleiterlaser-Vorrichtung.
DE3884832D1 (de) Laservorrichtung.
DE69021151T2 (de) Halbleiterlaser-Vorrichtung.
DE3884881T2 (de) Halbleiterlaservorrichtung.
DE3868435D1 (de) Halbleiterlaservorrichtung.
DE3854423D1 (de) Halbleiterlaservorrichtung.
DE68915699D1 (de) Halbleiterlaservorrichtung.
DE3875273D1 (de) Halbleiterlaser-vorrichtung.
DE69019233D1 (de) Halbleiter-Laservorrichtung.
DE68917178D1 (de) Halbleiterlaser-Vorrichtung.
DE3879270T2 (de) Halbleiterlaser.
DE3888376T2 (de) Halbleiterlaser-Vorrichtung.
DE3876043T2 (de) Halbleiterlaser-vorrichtung.
DE3852447T2 (de) Halbleiterlaservorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition