DE3884881T2 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3884881T2
DE3884881T2 DE88307225T DE3884881T DE3884881T2 DE 3884881 T2 DE3884881 T2 DE 3884881T2 DE 88307225 T DE88307225 T DE 88307225T DE 3884881 T DE3884881 T DE 3884881T DE 3884881 T2 DE3884881 T2 DE 3884881T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88307225T
Other languages
English (en)
Other versions
DE3884881D1 (de
Inventor
Hidenori Kawanishi
Hiroshi Hayashi
Taiji Morimoto
Shinji Kaneiwa
Masahiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62335808A external-priority patent/JPH0797692B2/ja
Priority claimed from JP62333967A external-priority patent/JPH0671122B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3884881D1 publication Critical patent/DE3884881D1/de
Application granted granted Critical
Publication of DE3884881T2 publication Critical patent/DE3884881T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE88307225T 1987-08-04 1988-08-04 Halbleiterlaservorrichtung. Expired - Fee Related DE3884881T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19572287 1987-08-04
JP62335808A JPH0797692B2 (ja) 1987-12-28 1987-12-28 半導体レーザー装置
JP62333967A JPH0671122B2 (ja) 1987-08-04 1987-12-29 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE3884881D1 DE3884881D1 (de) 1993-11-18
DE3884881T2 true DE3884881T2 (de) 1994-02-10

Family

ID=27327136

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88307225T Expired - Fee Related DE3884881T2 (de) 1987-08-04 1988-08-04 Halbleiterlaservorrichtung.

Country Status (3)

Country Link
US (1) US4926431A (de)
EP (1) EP0302732B1 (de)
DE (1) DE3884881T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
JPH03131083A (ja) * 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JP3162424B2 (ja) * 1991-05-27 2001-04-25 キヤノン株式会社 導波型光検出器及びその作製方法
GB2283858A (en) * 1993-11-12 1995-05-17 British Tech Group Semiconductor laser
WO1997033351A1 (fr) * 1996-03-04 1997-09-12 Matsushita Electric Industrial Co., Ltd. Laser a semi-conducteur
DE60027949T2 (de) 1999-02-23 2007-01-04 Mitsubishi Chemical Corp. Optische Halbleitervorrichtung
WO2008114896A1 (en) * 2007-03-16 2008-09-25 Potomac Optronics Inc. High power single mode optical devices with s-bending ridge waveguide and fabrication method thereof
FR3037341A1 (fr) * 2015-06-10 2016-12-16 Centre Nat Rech Scient Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
JP2017050318A (ja) * 2015-08-31 2017-03-09 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser
JPS5987888A (ja) * 1982-11-10 1984-05-21 Sharp Corp 半導体レ−ザ素子
JPS60790A (ja) * 1983-06-16 1985-01-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6058689A (ja) * 1983-09-12 1985-04-04 Agency Of Ind Science & Technol 半導体レ−ザ
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS61112392A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体レ−ザおよびその製造方法
JPS6261384A (ja) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp 高出力半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0302732A3 (en) 1989-06-14
EP0302732A2 (de) 1989-02-08
DE3884881D1 (de) 1993-11-18
EP0302732B1 (de) 1993-10-13
US4926431A (en) 1990-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee