DE3888376T2 - Halbleiterlaser-Vorrichtung. - Google Patents

Halbleiterlaser-Vorrichtung.

Info

Publication number
DE3888376T2
DE3888376T2 DE3888376T DE3888376T DE3888376T2 DE 3888376 T2 DE3888376 T2 DE 3888376T2 DE 3888376 T DE3888376 T DE 3888376T DE 3888376 T DE3888376 T DE 3888376T DE 3888376 T2 DE3888376 T2 DE 3888376T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888376T
Other languages
English (en)
Other versions
DE3888376D1 (de
Inventor
Shinichi Nakatsuka
Takashi Kajimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3888376D1 publication Critical patent/DE3888376D1/de
Publication of DE3888376T2 publication Critical patent/DE3888376T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
DE3888376T 1987-03-27 1988-03-25 Halbleiterlaser-Vorrichtung. Expired - Fee Related DE3888376T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071459A JP2532449B2 (ja) 1987-03-27 1987-03-27 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3888376D1 DE3888376D1 (de) 1994-04-21
DE3888376T2 true DE3888376T2 (de) 1994-06-30

Family

ID=13461186

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888376T Expired - Fee Related DE3888376T2 (de) 1987-03-27 1988-03-25 Halbleiterlaser-Vorrichtung.

Country Status (4)

Country Link
US (1) US4872175A (de)
EP (1) EP0285026B1 (de)
JP (1) JP2532449B2 (de)
DE (1) DE3888376T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5517517A (en) * 1994-06-30 1996-05-14 At&T Corp. Semiconductor laser having integrated waveguiding lens
DE19718413A1 (de) * 1996-04-30 1997-11-06 Hitachi Ltd Laserstrahldrucker und Halbleiterlaser-Bauteil, das als Lichtquelle für einen solchen geeignet ist
US20060139743A1 (en) * 2002-11-20 2006-06-29 Marsh John H Semiconductor optical device with beam focusing
US7139300B2 (en) * 2003-08-19 2006-11-21 Coherent, Inc. Wide-stripe single-mode diode-laser

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727097A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Semiconductor laser device
JPS57197505A (en) * 1981-05-29 1982-12-03 Canon Inc Thin film lens
JPS58168026A (ja) * 1982-03-29 1983-10-04 Agency Of Ind Science & Technol 分布屈折率球芯型波長分波器
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
FR2554606B1 (fr) * 1983-11-04 1987-04-10 Thomson Csf Dispositif optique de concentration du rayonnement lumineux emis par une diode electroluminescente, et diode electroluminescente comportant un tel dispositif
JPS60169183A (ja) * 1984-02-14 1985-09-02 Toshiba Corp 半導体レ−ザ装置
DE3532821A1 (de) * 1985-09-13 1987-03-26 Siemens Ag Leuchtdiode (led) mit sphaerischer linse
JP2723888B2 (ja) * 1987-01-09 1998-03-09 株式会社日立製作所 半導体レーザ素子
JPS63185085A (ja) * 1987-01-28 1988-07-30 Hitachi Ltd 半導体レ−ザアレ−

Also Published As

Publication number Publication date
EP0285026A2 (de) 1988-10-05
JPS63239891A (ja) 1988-10-05
JP2532449B2 (ja) 1996-09-11
EP0285026A3 (en) 1990-06-06
US4872175A (en) 1989-10-03
DE3888376D1 (de) 1994-04-21
EP0285026B1 (de) 1994-03-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee