DE3852447D1 - Halbleiterlaservorrichtung. - Google Patents
Halbleiterlaservorrichtung.Info
- Publication number
- DE3852447D1 DE3852447D1 DE3852447T DE3852447T DE3852447D1 DE 3852447 D1 DE3852447 D1 DE 3852447D1 DE 3852447 T DE3852447 T DE 3852447T DE 3852447 T DE3852447 T DE 3852447T DE 3852447 D1 DE3852447 D1 DE 3852447D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219719A JPH01186688A (ja) | 1987-09-02 | 1987-09-02 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3852447D1 true DE3852447D1 (de) | 1995-01-26 |
DE3852447T2 DE3852447T2 (de) | 1995-06-14 |
Family
ID=16739897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3852447T Expired - Fee Related DE3852447T2 (de) | 1987-09-02 | 1988-09-01 | Halbleiterlaservorrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4872174A (de) |
EP (1) | EP0306315B1 (de) |
JP (1) | JPH01186688A (de) |
DE (1) | DE3852447T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0475714B1 (de) * | 1990-09-10 | 1995-12-27 | Sharp Kabushiki Kaisha | Halbleiterlaser mit verteilter Rückkopplung und Verfahren zu seiner Herstellung |
US7050472B2 (en) * | 2000-03-01 | 2006-05-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for manufacturing the same |
US6643308B2 (en) * | 2001-07-06 | 2003-11-04 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and method for suppressing injection current |
KR100663589B1 (ko) * | 2004-11-24 | 2007-01-02 | 삼성전자주식회사 | 분포귀환 반도체 레이저의 제조방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993963A (en) * | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
US4045749A (en) * | 1975-11-24 | 1977-08-30 | Xerox Corporation | Corrugation coupled twin guide laser |
US4049749A (en) * | 1975-12-02 | 1977-09-20 | Hooker Chemicals & Plastics Corporation | Pigmentable low-profile polyester molding compositions |
GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
US4416012A (en) * | 1981-11-19 | 1983-11-15 | Rca Corporation | W-Guide buried heterostructure laser |
JPS59104189A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
JPS59205787A (ja) * | 1983-05-09 | 1984-11-21 | Nec Corp | 単一軸モ−ド半導体レ−ザ |
US4569054A (en) * | 1983-06-17 | 1986-02-04 | Rca Corporation | Double heterostructure laser |
JPS6014482A (ja) * | 1983-07-04 | 1985-01-25 | Toshiba Corp | 半導体レ−ザ装置 |
JPS59171188A (ja) * | 1984-01-11 | 1984-09-27 | Hitachi Ltd | 半導体レ−ザ素子 |
JPS6218082A (ja) * | 1985-07-16 | 1987-01-27 | Sharp Corp | 半導体レ−ザ素子 |
CA1279394C (en) * | 1985-07-26 | 1991-01-22 | Naoki Chinone | Multiple quantum well type semiconductor laser |
JPS6273690A (ja) * | 1985-09-26 | 1987-04-04 | Sharp Corp | 半導体レ−ザ−素子 |
JPS6273687A (ja) * | 1985-09-26 | 1987-04-04 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
-
1987
- 1987-09-02 JP JP62219719A patent/JPH01186688A/ja active Pending
-
1988
- 1988-09-01 DE DE3852447T patent/DE3852447T2/de not_active Expired - Fee Related
- 1988-09-01 US US07/239,301 patent/US4872174A/en not_active Expired - Fee Related
- 1988-09-01 EP EP88308119A patent/EP0306315B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0306315A3 (de) | 1991-05-08 |
EP0306315A2 (de) | 1989-03-08 |
DE3852447T2 (de) | 1995-06-14 |
EP0306315B1 (de) | 1994-12-14 |
JPH01186688A (ja) | 1989-07-26 |
US4872174A (en) | 1989-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |