DE69129281T2 - Optischer Halbleiterverstärker - Google Patents

Optischer Halbleiterverstärker

Info

Publication number
DE69129281T2
DE69129281T2 DE69129281T DE69129281T DE69129281T2 DE 69129281 T2 DE69129281 T2 DE 69129281T2 DE 69129281 T DE69129281 T DE 69129281T DE 69129281 T DE69129281 T DE 69129281T DE 69129281 T2 DE69129281 T2 DE 69129281T2
Authority
DE
Germany
Prior art keywords
optical semiconductor
semiconductor amplifier
amplifier
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69129281T
Other languages
English (en)
Other versions
DE69129281D1 (de
Inventor
Michiyo Nishimura
Jun Nitta
Kenji Nakamura
Masao Majima
Toru Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69129281D1 publication Critical patent/DE69129281D1/de
Application granted granted Critical
Publication of DE69129281T2 publication Critical patent/DE69129281T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE69129281T 1990-06-21 1991-06-20 Optischer Halbleiterverstärker Expired - Fee Related DE69129281T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16366590 1990-06-21
JP15102391A JP3154418B2 (ja) 1990-06-21 1991-05-27 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード

Publications (2)

Publication Number Publication Date
DE69129281D1 DE69129281D1 (de) 1998-05-28
DE69129281T2 true DE69129281T2 (de) 1998-11-05

Family

ID=26480421

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129281T Expired - Fee Related DE69129281T2 (de) 1990-06-21 1991-06-20 Optischer Halbleiterverstärker

Country Status (4)

Country Link
US (2) US5309275A (de)
EP (1) EP0463569B1 (de)
JP (1) JP3154418B2 (de)
DE (1) DE69129281T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10135101A1 (de) * 2001-07-11 2003-02-06 Forschungsverbund Berlin Ev Verfahren und Anordnung zur Justierung von optischen Bauelementen zwecks Strahlformung von Halbleiterstrahlungsemittern

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JP3154418B2 (ja) * 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
FR2692374B1 (fr) * 1992-06-15 1994-07-29 France Telecom Procede et dispositif de modulation et d'amplification de faisceaux lumineux.
JP3226067B2 (ja) * 1992-10-03 2001-11-05 キヤノン株式会社 光通信方法及び光通信システム
JP3226061B2 (ja) * 1993-02-19 2001-11-05 キヤノン株式会社 偏光無依存な半導体光増幅器及びそれを用いた光通信システム
JP3226073B2 (ja) * 1994-02-18 2001-11-05 キヤノン株式会社 偏波変調可能な半導体レーザおよびその使用法
DE69521157T2 (de) * 1994-02-18 2001-11-08 Canon Kk Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers
US5661585A (en) * 1995-02-27 1997-08-26 Lucent Technologies Inc. Passive optical network having amplified LED transmitters
JP3204485B2 (ja) * 1995-03-31 2001-09-04 キヤノン株式会社 光半導体装置及びその作製方法
DE19518021A1 (de) * 1995-05-17 1996-11-21 Sel Alcatel Ag Optischer Verstärker
GB9610621D0 (en) * 1996-05-21 1996-07-31 Hewlett Packard Co Optical isolator
EP1498844B1 (de) * 1996-06-05 2009-09-30 Kabushiki Kaisha Sega doing business as Sega Corporation Grafikverarbeitungsgerät, Grafikverarbeitungsmethode, Spielgerät und Speichermedium
KR100289040B1 (ko) * 1997-12-22 2001-05-02 이계철 단일광섬유를이용한양방향광통신모듈
US6344921B1 (en) * 1999-02-22 2002-02-05 Almantas Galvanauskas Optical parametric amplifiers and generators in optical communication systems
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
JP3857141B2 (ja) 2002-01-07 2006-12-13 富士通株式会社 光半導体装置及びその製造方法
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
DE10258475B4 (de) * 2002-12-10 2005-11-10 Infineon Technologies Ag Optischer Halbleiterverstärker
US7348600B2 (en) * 2003-10-20 2008-03-25 Nichia Corporation Nitride semiconductor device, and its fabrication process
JP2006245136A (ja) * 2005-03-01 2006-09-14 Sumitomo Electric Ind Ltd 半導体光素子
JP4618118B2 (ja) * 2005-12-14 2011-01-26 沖電気工業株式会社 受動モード同期半導体レーザ及び光クロック信号抽出装置
US20090060411A1 (en) * 2007-09-05 2009-03-05 Michigan Technological University Planar magnetization latching in magneto-optic films
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
JP2012175571A (ja) * 2011-02-23 2012-09-10 Sumitomo Electric Ind Ltd 偏波回転素子の製造方法及び偏波回転素子
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
CN103219646A (zh) * 2013-03-21 2013-07-24 常州镭赛科技有限公司 光放大器
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods

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JPS61132935A (ja) * 1984-12-03 1986-06-20 Canon Inc 弾性表面波光偏向器
JPS6239935A (ja) * 1985-08-15 1987-02-20 Fujitsu Ltd 光バスネツト試験方式
JPS6289383A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS6461079A (en) * 1987-09-01 1989-03-08 Nec Corp Semiconductor laser light amplifier
EP0305995B1 (de) * 1987-09-01 1993-11-03 Nec Corporation Optischer Zwischenverstärker
JPH06103776B2 (ja) * 1987-10-16 1994-12-14 日本電気株式会社 光増幅装置
JPH0831657B2 (ja) * 1988-04-07 1996-03-27 日本電気株式会社 光増幅器
JP2733263B2 (ja) * 1988-10-04 1998-03-30 キヤノン株式会社 集積型光ノードおよびそれを用いたバス型光情報システム
JPH02127624A (ja) * 1988-11-08 1990-05-16 Nec Corp 半導体光増幅器
JPH081949B2 (ja) * 1989-05-30 1996-01-10 三菱電機株式会社 赤外線撮像装置及びその製造方法
JPH03151023A (ja) * 1989-11-07 1991-06-27 Agency Of Ind Science & Technol 気体状有害物質の光化学的処理方法
US5026148A (en) * 1989-12-26 1991-06-25 Hughes Aircraft Company High efficiency multiple quantum well structure and operating method
JP2808562B2 (ja) * 1990-02-27 1998-10-08 キヤノン株式会社 半導体光増幅素子
JP3154418B2 (ja) * 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10135101A1 (de) * 2001-07-11 2003-02-06 Forschungsverbund Berlin Ev Verfahren und Anordnung zur Justierung von optischen Bauelementen zwecks Strahlformung von Halbleiterstrahlungsemittern
DE10135101B4 (de) * 2001-07-11 2004-07-22 Forschungsverbund Berlin E.V. Verfahren und Anordnung zur Justierung von Hochleistungs-Halbleiterstrahlungsemittern zugeordneten optischen Bauelementen zwecks Strahlformung

Also Published As

Publication number Publication date
EP0463569A3 (en) 1992-03-25
EP0463569B1 (de) 1998-04-22
JPH0521903A (ja) 1993-01-29
DE69129281D1 (de) 1998-05-28
US5309275A (en) 1994-05-03
EP0463569A2 (de) 1992-01-02
US5414549A (en) 1995-05-09
JP3154418B2 (ja) 2001-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee