DE69104573T2 - Optischer Verstärker. - Google Patents

Optischer Verstärker.

Info

Publication number
DE69104573T2
DE69104573T2 DE69104573T DE69104573T DE69104573T2 DE 69104573 T2 DE69104573 T2 DE 69104573T2 DE 69104573 T DE69104573 T DE 69104573T DE 69104573 T DE69104573 T DE 69104573T DE 69104573 T2 DE69104573 T2 DE 69104573T2
Authority
DE
Germany
Prior art keywords
optical amplifier
amplifier
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104573T
Other languages
English (en)
Other versions
DE69104573D1 (de
Inventor
Petrus Johannes Adrianus Thijs
Lukas Frederik Tiemeijer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE69104573D1 publication Critical patent/DE69104573D1/de
Publication of DE69104573T2 publication Critical patent/DE69104573T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69104573T 1990-08-03 1991-07-29 Optischer Verstärker. Expired - Fee Related DE69104573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL9001761 1990-08-03

Publications (2)

Publication Number Publication Date
DE69104573D1 DE69104573D1 (de) 1994-11-17
DE69104573T2 true DE69104573T2 (de) 1995-04-20

Family

ID=19857512

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104573T Expired - Fee Related DE69104573T2 (de) 1990-08-03 1991-07-29 Optischer Verstärker.

Country Status (5)

Country Link
US (1) US5151818A (de)
EP (1) EP0469681B1 (de)
JP (1) JP3238727B2 (de)
CA (1) CA2048203C (de)
DE (1) DE69104573T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE509264C2 (sv) * 1992-01-30 1998-12-21 Ericsson Telefon Ab L M Anordning och förfarande för polarisationsoberoende behandling av en optisk signal i en vågledare
FR2687011B1 (fr) * 1992-01-31 1994-07-08 France Telecom Amplificateur optique a semiconducteur a faible temps de commutation.
JP3306892B2 (ja) * 1992-02-28 2002-07-24 株式会社日立製作所 半導体光集積素子およびその製造方法
DE69331979T2 (de) * 1992-02-28 2003-01-23 Hitachi Ltd Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
JP3226061B2 (ja) * 1993-02-19 2001-11-05 キヤノン株式会社 偏光無依存な半導体光増幅器及びそれを用いた光通信システム
JP3226070B2 (ja) * 1993-10-04 2001-11-05 キヤノン株式会社 半導体光素子
DE69510331T2 (de) * 1994-12-12 1999-11-25 Uniphase Opto Holdings Inc Halbleiterlaserdiodenverstärker und dessen herstellung
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
JPH10500786A (ja) * 1995-03-15 1998-01-20 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 光スイッチ
EP0760174B1 (de) * 1995-03-15 2001-10-24 Koninklijke Philips Electronics N.V. Einheit zur modulation einer optischen pulsreihe in übereinstimmung mit einem datensignal
SE505433C2 (sv) * 1995-05-04 1997-08-25 Ericsson Telefon Ab L M Laserförstärkare, optiskt system innefattande en sådan laserförstärkare och ett förfarande för att forma en sådan laserförstärkare
JPH08307014A (ja) * 1995-05-08 1996-11-22 Mitsubishi Electric Corp 光半導体装置
ATE216594T1 (de) * 1995-09-01 2002-05-15 Univ Washington Interaktive molekulare konjugate
FR2745961B1 (fr) * 1996-03-05 1998-04-10 Alcatel Optronics Amplificateur optique a semi-conducteur
JPH10154841A (ja) * 1996-09-26 1998-06-09 Nippon Telegr & Teleph Corp <Ntt> 偏波制御半導体レーザ形光増幅素子
JP2937148B2 (ja) * 1996-11-06 1999-08-23 日本電気株式会社 半導体集積型偏波モード変換器
US6175446B1 (en) 1998-09-23 2001-01-16 Sarnoff Corporation Polarization-independent semiconductor optical amplifier
FR2784243B1 (fr) * 1998-10-02 2000-11-24 Cit Alcatel Amplificateur optique en semi-conducteur
FR2813450B1 (fr) * 2000-08-22 2003-08-29 Cit Alcatel Amplificateur optique en semi-conducteur
FR2813448A1 (fr) * 2000-08-22 2002-03-01 Cit Alcatel Amplificateur optique a semi-conducteur
JP4359035B2 (ja) * 2002-11-21 2009-11-04 富士通株式会社 光中継器
US20040196540A1 (en) * 2003-02-28 2004-10-07 Lealman Ian Francis Semiconductor optical amplifiers
JP4584079B2 (ja) * 2005-08-31 2010-11-17 富士通株式会社 半導体光増幅器および光集積回路
US20090001389A1 (en) * 2007-06-28 2009-01-01 Motorola, Inc. Hybrid vertical cavity of multiple wavelength leds
TW200947724A (en) * 2008-01-14 2009-11-16 Ibm Using 3D integrated diffractive gratings in solar cells
US9431791B1 (en) 2014-02-05 2016-08-30 Aurrion, Inc. Multi-section heterogeneous semiconductor optical amplifier

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663761A (en) * 1983-10-12 1987-05-05 The General Electric Company, P.L.C. Semiconductor diode lasers
US4680769A (en) * 1984-11-21 1987-07-14 Bell Communications Research, Inc. Broadband laser amplifier structure
US4612645A (en) * 1984-12-19 1986-09-16 Gte Laboratories Incorporated Fast polarization-switchable semiconductor lasers
US4685108A (en) * 1985-07-03 1987-08-04 Gte Laboratories Incorporated Optical multivibrator
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
US4935935A (en) * 1988-08-31 1990-06-19 Carnegie Mellon University Wavelength tunable electronic and electrooptical semiconductor devices
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells

Also Published As

Publication number Publication date
DE69104573D1 (de) 1994-11-17
JP3238727B2 (ja) 2001-12-17
JPH04233783A (ja) 1992-08-21
CA2048203C (en) 2002-01-22
CA2048203A1 (en) 1992-02-04
EP0469681A1 (de) 1992-02-05
EP0469681B1 (de) 1994-10-12
US5151818A (en) 1992-09-29

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Representative=s name: KEHL & ETTMAYR, PATENTANWAELTE, 81679 MUENCHEN

8339 Ceased/non-payment of the annual fee