FR2813450B1 - Amplificateur optique en semi-conducteur - Google Patents

Amplificateur optique en semi-conducteur

Info

Publication number
FR2813450B1
FR2813450B1 FR0010820A FR0010820A FR2813450B1 FR 2813450 B1 FR2813450 B1 FR 2813450B1 FR 0010820 A FR0010820 A FR 0010820A FR 0010820 A FR0010820 A FR 0010820A FR 2813450 B1 FR2813450 B1 FR 2813450B1
Authority
FR
France
Prior art keywords
optical amplifier
semiconductor optical
semiconductor
amplifier
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0010820A
Other languages
English (en)
Other versions
FR2813450A1 (fr
Inventor
Leon Golstein
Jean Yves Emery
Frederic Pommereau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Alcatel Lucent SAS
Original Assignee
Alcatel CIT SA
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Alcatel SA filed Critical Alcatel CIT SA
Priority to FR0010820A priority Critical patent/FR2813450B1/fr
Priority to JP2002522038A priority patent/JP2004507893A/ja
Priority to US10/110,131 priority patent/US6894833B2/en
Priority to PCT/FR2001/002631 priority patent/WO2002017453A1/fr
Priority to EP01963109A priority patent/EP1314231A1/fr
Publication of FR2813450A1 publication Critical patent/FR2813450A1/fr
Application granted granted Critical
Publication of FR2813450B1 publication Critical patent/FR2813450B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR0010820A 2000-08-22 2000-08-22 Amplificateur optique en semi-conducteur Expired - Fee Related FR2813450B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0010820A FR2813450B1 (fr) 2000-08-22 2000-08-22 Amplificateur optique en semi-conducteur
JP2002522038A JP2004507893A (ja) 2000-08-22 2001-08-20 半導体光増幅器
US10/110,131 US6894833B2 (en) 2000-08-22 2001-08-20 Semiconductor optical amplifier
PCT/FR2001/002631 WO2002017453A1 (fr) 2000-08-22 2001-08-20 Amplificateur optique en semi-conducteur
EP01963109A EP1314231A1 (fr) 2000-08-22 2001-08-20 Amplificateur optique en semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0010820A FR2813450B1 (fr) 2000-08-22 2000-08-22 Amplificateur optique en semi-conducteur

Publications (2)

Publication Number Publication Date
FR2813450A1 FR2813450A1 (fr) 2002-03-01
FR2813450B1 true FR2813450B1 (fr) 2003-08-29

Family

ID=8853661

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0010820A Expired - Fee Related FR2813450B1 (fr) 2000-08-22 2000-08-22 Amplificateur optique en semi-conducteur

Country Status (5)

Country Link
US (1) US6894833B2 (fr)
EP (1) EP1314231A1 (fr)
JP (1) JP2004507893A (fr)
FR (1) FR2813450B1 (fr)
WO (1) WO2002017453A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2813449B1 (fr) * 2000-08-22 2003-01-17 Cit Alcatel Dispositif optique amplificateur
JP4090768B2 (ja) * 2002-03-20 2008-05-28 株式会社日立製作所 半導体レーザ素子
US7489440B2 (en) 2006-10-19 2009-02-10 International Business Machines Corporation Optical spectral filtering and dispersion compensation using semiconductor optical amplifiers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.
JPH0773139B2 (ja) * 1993-01-26 1995-08-02 日本電気株式会社 面発光半導体レーザ
JPH09509535A (ja) * 1994-12-12 1997-09-22 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザ増幅器及びその製造方法
FR2745961B1 (fr) * 1996-03-05 1998-04-10 Alcatel Optronics Amplificateur optique a semi-conducteur
JP3482824B2 (ja) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
JP3606059B2 (ja) * 1998-03-11 2005-01-05 セイコーエプソン株式会社 面発光型半導体レーザ及びその製造方法
JP2001053392A (ja) * 1999-06-03 2001-02-23 Fujitsu Ltd 偏波無依存型半導体光増幅器

Also Published As

Publication number Publication date
EP1314231A1 (fr) 2003-05-28
US6894833B2 (en) 2005-05-17
US20020149073A1 (en) 2002-10-17
WO2002017453A1 (fr) 2002-02-28
JP2004507893A (ja) 2004-03-11
FR2813450A1 (fr) 2002-03-01

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Legal Events

Date Code Title Description
ST Notification of lapse