FR2813449B1 - Dispositif optique amplificateur - Google Patents
Dispositif optique amplificateurInfo
- Publication number
- FR2813449B1 FR2813449B1 FR0010819A FR0010819A FR2813449B1 FR 2813449 B1 FR2813449 B1 FR 2813449B1 FR 0010819 A FR0010819 A FR 0010819A FR 0010819 A FR0010819 A FR 0010819A FR 2813449 B1 FR2813449 B1 FR 2813449B1
- Authority
- FR
- France
- Prior art keywords
- optical amplifier
- amplifier device
- optical
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0010819A FR2813449B1 (fr) | 2000-08-22 | 2000-08-22 | Dispositif optique amplificateur |
US10/111,053 US6867911B2 (en) | 2000-08-22 | 2001-08-20 | Optical amplifier device |
PCT/FR2001/002630 WO2002017452A1 (fr) | 2000-08-22 | 2001-08-20 | Dispositif optique amplificateur |
EP01963108A EP1314230A1 (fr) | 2000-08-22 | 2001-08-20 | Dispositif optique amplificateur |
JP2002522037A JP2004507892A (ja) | 2000-08-22 | 2001-08-20 | 光増幅器デバイス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0010819A FR2813449B1 (fr) | 2000-08-22 | 2000-08-22 | Dispositif optique amplificateur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2813449A1 FR2813449A1 (fr) | 2002-03-01 |
FR2813449B1 true FR2813449B1 (fr) | 2003-01-17 |
Family
ID=8853660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0010819A Expired - Fee Related FR2813449B1 (fr) | 2000-08-22 | 2000-08-22 | Dispositif optique amplificateur |
Country Status (5)
Country | Link |
---|---|
US (1) | US6867911B2 (fr) |
EP (1) | EP1314230A1 (fr) |
JP (1) | JP2004507892A (fr) |
FR (1) | FR2813449B1 (fr) |
WO (1) | WO2002017452A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064051A (ja) * | 2003-08-14 | 2005-03-10 | Fibest Ltd | 光モジュールおよび光通信システム |
US7738167B2 (en) * | 2005-12-09 | 2010-06-15 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (RSOA), RSOA module having the same, and passive optical network using the same |
JP2008288500A (ja) * | 2007-05-21 | 2008-11-27 | Mitsubishi Electric Corp | 半導体光デバイス、及びその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590703A (ja) * | 1991-09-30 | 1993-04-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光増幅器 |
EP0558089B1 (fr) * | 1992-02-28 | 2002-06-05 | Hitachi, Ltd. | Dispositif optique, intégré à semi-conducteur et méthode de fabrication, et récepteur de lumière utilisant ce dispositif |
JPH0773139B2 (ja) * | 1993-01-26 | 1995-08-02 | 日本電気株式会社 | 面発光半導体レーザ |
JP3226061B2 (ja) * | 1993-02-19 | 2001-11-05 | キヤノン株式会社 | 偏光無依存な半導体光増幅器及びそれを用いた光通信システム |
JP3226063B2 (ja) * | 1993-03-09 | 2001-11-05 | キヤノン株式会社 | 半導体光増幅器 |
JP3226070B2 (ja) * | 1993-10-04 | 2001-11-05 | キヤノン株式会社 | 半導体光素子 |
JP3226069B2 (ja) * | 1993-10-04 | 2001-11-05 | キヤノン株式会社 | 半導体積層構造および半導体光素子 |
WO1996019023A2 (fr) * | 1994-12-12 | 1996-06-20 | Philips Electronics N.V. | Amplificateur laser a diode a semi-conducteurs et son procede de fabrication |
US5757023A (en) * | 1996-01-25 | 1998-05-26 | National Research Council Of Canada | Fabrication of quantum well polarization independent active devices |
FR2745961B1 (fr) * | 1996-03-05 | 1998-04-10 | Alcatel Optronics | Amplificateur optique a semi-conducteur |
JPH118442A (ja) * | 1996-10-07 | 1999-01-12 | Canon Inc | 光半導体デバイス、それを用いた光通信システム及び方法 |
JPH10215022A (ja) * | 1997-01-31 | 1998-08-11 | Kagaku Gijutsu Shinko Jigyodan | 半導体レーザー及び単一偏光モード光の発生方法 |
JP2947227B2 (ja) * | 1997-06-24 | 1999-09-13 | 日本電気株式会社 | 半導体光増幅器、その製造方法及び利得の偏光依存性の補償方法 |
JP3482824B2 (ja) * | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
JP3244114B2 (ja) * | 1997-08-18 | 2002-01-07 | 日本電気株式会社 | 半導体光アンプ |
US5953362A (en) * | 1997-12-15 | 1999-09-14 | Pamulapati; Jagadeesh | Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same |
US6175446B1 (en) * | 1998-09-23 | 2001-01-16 | Sarnoff Corporation | Polarization-independent semiconductor optical amplifier |
FR2784243B1 (fr) * | 1998-10-02 | 2000-11-24 | Cit Alcatel | Amplificateur optique en semi-conducteur |
JP2001053392A (ja) * | 1999-06-03 | 2001-02-23 | Fujitsu Ltd | 偏波無依存型半導体光増幅器 |
JP3428501B2 (ja) * | 1999-06-03 | 2003-07-22 | 日本電気株式会社 | 半導体光増幅器およびその製造方法 |
JP2001117128A (ja) * | 1999-10-14 | 2001-04-27 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子 |
KR100353419B1 (ko) * | 2000-03-10 | 2002-09-18 | 삼성전자 주식회사 | 편광 무의존 반도체 광증폭기 |
US6310720B1 (en) * | 2000-06-02 | 2001-10-30 | Genoa Corporation | Polarization insensitive semiconductor optical amplifier |
FR2813450B1 (fr) * | 2000-08-22 | 2003-08-29 | Cit Alcatel | Amplificateur optique en semi-conducteur |
JP4789320B2 (ja) * | 2000-12-01 | 2011-10-12 | 富士通株式会社 | 半導体光増幅器 |
-
2000
- 2000-08-22 FR FR0010819A patent/FR2813449B1/fr not_active Expired - Fee Related
-
2001
- 2001-08-20 US US10/111,053 patent/US6867911B2/en not_active Expired - Fee Related
- 2001-08-20 EP EP01963108A patent/EP1314230A1/fr not_active Withdrawn
- 2001-08-20 WO PCT/FR2001/002630 patent/WO2002017452A1/fr not_active Application Discontinuation
- 2001-08-20 JP JP2002522037A patent/JP2004507892A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2813449A1 (fr) | 2002-03-01 |
JP2004507892A (ja) | 2004-03-11 |
US6867911B2 (en) | 2005-03-15 |
EP1314230A1 (fr) | 2003-05-28 |
WO2002017452A1 (fr) | 2002-02-28 |
US20020154392A1 (en) | 2002-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |
Effective date: 20150430 |