WO2002017452A1 - Dispositif optique amplificateur - Google Patents
Dispositif optique amplificateur Download PDFInfo
- Publication number
- WO2002017452A1 WO2002017452A1 PCT/FR2001/002630 FR0102630W WO0217452A1 WO 2002017452 A1 WO2002017452 A1 WO 2002017452A1 FR 0102630 W FR0102630 W FR 0102630W WO 0217452 A1 WO0217452 A1 WO 0217452A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- polarization
- light
- optical amplifier
- active
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Definitions
- the present invention relates to the amplification of optical signals. It typically finds application in fiber optic telecommunications networks.
- the signals transmitted by these networks consist of pulses carrying in binary form information to be transmitted. These pulses must be amplified to compensate for losses of power which they undergo during their propagation in these networks.
- Semiconductor optical amplifier devices constitute a solution which makes it possible to carry out this amplification.
- Such an optical amplifier device is also the core of a large number of key optoelectronic functions for very high speed optical telecommunications networks. We can cite, by way of nonlimiting example, wavelength converters and fast optical gates. In all of these applications, the optical amplifier device is used "in line" with an optical fiber.
- the optical fiber does not retain the polarization of the injected light
- the characteristics of the optical semiconductor amplifier must not depend on the state of polarization of the light to be amplified.
- all the characteristics of a optical amplifier, in particular its gain, are sensitive to the polarization state of the light it receives, which will be more simply indicated below by mentioning the sensitivity of an amplifier to polarization.
- an optoelectronic device must have optical and electrical input and / or output interfaces. This is called an optoelectronic module.
- the simplest module contains a chip which constitutes the optical amplifier with its i-conductor (SOA chip for Semiconductor Optical Amplification in English or AOSC for Semiconductor Optical Amplifier).
- SOA chip for Semiconductor Optical Amplification in English or AOSC for Semiconductor Optical Amplifier
- This chip is transferred to a base, in silicon for example, and connected by electrodes.
- the module also includes means for coupling the light between the SOA chip and the input and output optical fibers.
- the invention applies to devices comprising an SOA chip, whatever its structure.
- the SOA chip is said to be “buried ribbon”.
- the active structure used to make this chip i.e. which allows charge carriers to be injected into the active ribbon
- BRS Burried Ridge Structure in English
- Such a semiconductor optical amplifier component 1 (an illustration of which is given in FIG. 1) comprises a wafer 2 made up of layers of semiconductor materials having indices of refraction and forming a common crystal lattice. In the absence of mechanical constraints, networks formed respectively by these materials have characteristic dimensions constituting respective meshes of these materials. These layers follow one another in a vertical direction DV forming a trirectangle trihedron with two horizontal directions constituting a longitudinal direction DL and a transverse direction DT, these directions being defined with respect to this plate 2. These layers form a succession in an ascending direction of the vertical direction DV from a lower face 4 to an upper face 6.
- This plate 2 comprises at least the following layers or groups of layers or part of a layer:
- a substrate 8 consisting mainly of an i-conductive base material having a first type of conductivity. This substrate has a sufficient thickness to impose the dimensions of the mesh of the base material on the entire crystal lattice of the wafer 2.
- An active layer 10 including an active material capable of amplifying light by stimulated recombination of charge carriers of the two types injected into this material.
- a guiding structure 12 comprising at least one buried ribbon having a higher refractive index than that of surrounding materials.
- the strip 12 extends in the longitudinal direction DL to guide said light along this direction.
- This ribbon 12 has a width 1 and a thickness e respectively transverse and vertical.
- an upper confinement layer 18 made of a material having a second type of conductivity opposite to the first.
- This amplifier further comprises a lower electrode 20 and an upper electrode 22 respectively formed on the lower face 4 and the upper face 6 of the wafer 2 to allow an electric current to pass between these faces injecting said charge carriers of the two types into the active material.
- the basic materials of known semiconductor optical amplifiers are of the III-V type. These are typically indium phosphide and gallium arsenide. Their active material is typically a ternary or quaternary material formed with the same chemical elements. It is generally desired that the width 1 of the ribbon 12 which guides the light be greater than one micrometer to facilitate the formation of this ribbon by etching and above all to facilitate the integration of the amplifier with other optical components on the same wafer. semiconductor. The thickness e must then be much less than this width to ensure a mononodal guidance of the light whose wavelength is typically 1310 or 1550 nm. In the absence of special provisions, it is this rectangular shape of the section of the ribbon 12 which tends to cause the previously mentioned polarization sensitivity of the SOA chip.
- the active material 10 constituting the ribbon 12 guiding the light to be amplified is surrounded on all sides by a binary semiconductor material 14, 16 whose refractive index is slightly lower than that of active material.
- a binary semiconductor material 14, 16 whose refractive index is slightly lower than that of active material.
- the confinement of a wave with horizontal polarization is greater than that of a wave vertically polarized, the difference between these two confinements being all the greater the greater the greater the ratio of the width 1 to the thickness e of the strip.
- the confinement is defined for each polarization and for each wavelength by the shape and the dimensions of the section of the ribbon and by the refractive indices of the material of this ribbon and of the surrounding material. We thus define the ratio of the confinement factors
- ⁇ G ( SO ) (dB) G TE (dB) * (i- g TM / g T E * - r TM / r TE ) [i] with G TE (dB) the gain of the semi-optical amplifier conductor for the TE propagation mode of light, g ⁇ M / g ⁇ E, the ratio of the gains of the active material, and ⁇ M / T E , the ratio of the confinement factors.
- the optical amplifier component, or SOA chip, as described above is transferred to a base for integration into a module with other optical elements, such as an optical fiber, a detector or whatever.
- a base for integration into a module with other optical elements, such as an optical fiber, a detector or whatever.
- SOA chip There are several techniques for transferring an SOA chip to a base.
- a known technique for manufacturing "low cost” components consists in mounting the SOA chip in a "flip chip", that is to say turned it over, and positioning it on the base by a process called “auto”. such a technique is illustrated diagrammatically in FIG. 2.
- This self-alignment technique consists in carrying out additional indentations 32, 34 on the SOA chip 1 and on the base 30 and in abutting them by a restoring force F exerted on the chip 1 during its transfer in flip chip on the base 30.
- This restoring force F is obtained during the welding of the chip 1 on the base 30 by a process which consists in fusing two metal studs 25, 26 respectively deposited on the chip 1 and on the base 30.
- Gold and Gold / Tin studs are generally used in the • context of this process. Thanks to the complementary indentations 32 and 34, the SOA chip is self-aligned in front of a fiber placed in a groove itself aligned with respect to the indentation 32.
- this restoring force F induces a stress field on the active structure guide 12 of the SOA chip 1, which therefore modifies its sensitivity to the polarization of the light to be amplified.
- This sensitivity is reproducible for a fixed assembly procedure.
- the object of the present invention is to solve the drawbacks of the prior art.
- the invention proposes to compensate for the undesirable effects introduced by the integration of the SOA chip into a low cost optical amplifier device by applying an additional constraint, internal or external, directly on the active guiding structure of the SOA chip. so that the overall stress to which this guiding active structure is subjected makes the gain of the amplifier device insensitive to the polarization of light.
- the SOA chip is therefore deliberately made sensitive to the polarization of the light to be amplified, so that the optical device in which it is integrated is insensitive to the polarization of said light.
- the invention relates more particularly to an optical amplifier device integrating an optical amplifier component in semiconductor comprising a active guiding structure, characterized in that said active guiding structure is subjected to an external stress originating from the integration of said component in said device and in that said component has a controlled sensitivity to the state of polarization of the light to be amplified in order making the gain of said optical amplifier device insensitive to the state of polarization of said light to be amplified.
- the external constraint to the component comes from the transfer of said component to a base by a passive self-alignment process.
- the external stress to the component comes from the connection of said component by an electrode situated above the active guiding structure, said electrode having approximately the same width as said active guiding structure.
- the sensitivity of the gain of the component to the state of polarization of the light to be amplified is controlled by an adjustment of the ratio of the confinement factors r TM / r TE of the active structure.
- the sensitivity of the gain of the component to the state of polarization of the light to be amplified is controlled by an adjustment of the confinement factor of the guiding active structure.
- the sensitivity of the gain of the component to the state of polarization of the light to be amplified is controlled by an adjustment of a force induced by an oxide deposit against a ribbon framing the active guiding structure.
- the sensitivity of the gain of the component to the state of polarization of the light to be amplified is controlled by an active adjustment of two sections of the active guiding structure each promoting, respectively, a higher gain of the TE mode. and the TM mode of polarization of the light to be amplified.
- FIG. 1, already described, is a diagram of an SOA chip with buried ribbon according to the prior art.
- Figure 2 is a diagram illustrating the technique of passive self-alignment.
- the following description relates to an optical amplifier device comprising a component 1 (an SOA chip) transferred to a base 30 and connected by an electrode 22 in order to operate in an optical module.
- a component 1 an SOA chip
- the objective of the invention is to achieve a device insensitive to the polarization of the light to be amplified with
- the present invention is therefore characterized by the fact that an SOA chip is voluntarily sensitive to a mode of polarization of the light to be amplified ⁇ G ( S O A ) ⁇ 0 in order to compensate for the sensitivity induced by the assembly of this chip in an optical module.
- the active guiding structure 12 of the SOA chip 1 is therefore subjected on the one hand to an external stress originating from the integration of said chip 1 in a device and on the other hand to an additional internal stress in the chip 1, the combination of these two constraints making it possible to make the gain of said optical amplifier device insensitive to the polarization of the light to be amplified.
- the external constraint of modulating the chip can come from the transfer of the SOA chip 1 to a base 30 by a passive self-alignment process and / or the connection of the chip 1 by an electrode 22 situated above the active guiding structure 22, the electrode having approximately the same width as the active guiding structure.
- the restoring force implemented in the passive self-alignment process induces a stress field on the active guiding structure 12 of the chip.
- the connection of the chip 1 by an electrode 22 which would have approximately the same dimensions as the active guiding structure 12 can induce a force on this active structure 12 which modifies the isotropy of the response of the active material 10 to the polarization light to be amplified.
- the component 1 is designed so as to exhibit a controlled sensitivity of its gain to the polarization of the light to be amplified.
- the active guiding structure 12 of the chip is subjected to other constraints than those generated by the integration of the component in the device, these constraints being applied directly at the level of the SOA chip.
- control of the sensitivity of the gain of the SOA chip 1 can come from an adjustment of the mesh mismatch of the semiconductor material constituting the guiding active structure 12.
- Such a technique can be transformed in the context of the present invention in order to make the gain of the guiding active structure 12 of the SOA chip 1 voluntarily sensitive to the polarization of the light to be amplified.
- control of the sensitivity of the gain of the SOA 1 chip can come from an adjustment of the confinement factors TT U / TT E of the guiding active structure 12. It has indeed been developed previously that the geometry tape had a direct impact on its sensitivity to light polarization.
- the various embodiments described can also be combined together to obtain an SOA 1 chip, the sensitivity of the gain of which to the state of polarization of the light to be amplified is perfectly controlled so as to obtain, after the chip has been transferred to a optical module, an amplifier device whose gain is insensitive to the polarization state of the light to be amplified.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/111,053 US6867911B2 (en) | 2000-08-22 | 2001-08-20 | Optical amplifier device |
JP2002522037A JP2004507892A (ja) | 2000-08-22 | 2001-08-20 | 光増幅器デバイス |
EP01963108A EP1314230A1 (fr) | 2000-08-22 | 2001-08-20 | Dispositif optique amplificateur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR00/10819 | 2000-08-22 | ||
FR0010819A FR2813449B1 (fr) | 2000-08-22 | 2000-08-22 | Dispositif optique amplificateur |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002017452A1 true WO2002017452A1 (fr) | 2002-02-28 |
Family
ID=8853660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/002630 WO2002017452A1 (fr) | 2000-08-22 | 2001-08-20 | Dispositif optique amplificateur |
Country Status (5)
Country | Link |
---|---|
US (1) | US6867911B2 (fr) |
EP (1) | EP1314230A1 (fr) |
JP (1) | JP2004507892A (fr) |
FR (1) | FR2813449B1 (fr) |
WO (1) | WO2002017452A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064051A (ja) * | 2003-08-14 | 2005-03-10 | Fibest Ltd | 光モジュールおよび光通信システム |
US7738167B2 (en) * | 2005-12-09 | 2010-06-15 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (RSOA), RSOA module having the same, and passive optical network using the same |
JP2008288500A (ja) * | 2007-05-21 | 2008-11-27 | Mitsubishi Electric Corp | 半導体光デバイス、及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0590703A (ja) * | 1991-09-30 | 1993-04-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光増幅器 |
US5394423A (en) * | 1993-01-26 | 1995-02-28 | Nec Corporation | Surface emitting semiconductor laser |
JPH10215022A (ja) * | 1997-01-31 | 1998-08-11 | Kagaku Gijutsu Shinko Jigyodan | 半導体レーザー及び単一偏光モード光の発生方法 |
JPH1117260A (ja) * | 1997-06-24 | 1999-01-22 | Nec Corp | 半導体光増幅器、その製造方法及び利得の偏光依存性の補償方法 |
EP0935321A1 (fr) * | 1997-07-29 | 1999-08-11 | Seiko Epson Corporation | Laser a semiconducteur a emission en surface |
US5953362A (en) * | 1997-12-15 | 1999-09-14 | Pamulapati; Jagadeesh | Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same |
US5982531A (en) * | 1996-03-05 | 1999-11-09 | Alcatel Optronics | Semiconductor optical amplifier |
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DE69331979T2 (de) * | 1992-02-28 | 2003-01-23 | Hitachi Ltd | Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger |
JP3226061B2 (ja) * | 1993-02-19 | 2001-11-05 | キヤノン株式会社 | 偏光無依存な半導体光増幅器及びそれを用いた光通信システム |
JP3226063B2 (ja) * | 1993-03-09 | 2001-11-05 | キヤノン株式会社 | 半導体光増幅器 |
JP3226070B2 (ja) * | 1993-10-04 | 2001-11-05 | キヤノン株式会社 | 半導体光素子 |
JP3226069B2 (ja) * | 1993-10-04 | 2001-11-05 | キヤノン株式会社 | 半導体積層構造および半導体光素子 |
WO1996019023A2 (fr) * | 1994-12-12 | 1996-06-20 | Philips Electronics N.V. | Amplificateur laser a diode a semi-conducteurs et son procede de fabrication |
US5757023A (en) * | 1996-01-25 | 1998-05-26 | National Research Council Of Canada | Fabrication of quantum well polarization independent active devices |
JPH118442A (ja) * | 1996-10-07 | 1999-01-12 | Canon Inc | 光半導体デバイス、それを用いた光通信システム及び方法 |
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US6175446B1 (en) * | 1998-09-23 | 2001-01-16 | Sarnoff Corporation | Polarization-independent semiconductor optical amplifier |
FR2784243B1 (fr) * | 1998-10-02 | 2000-11-24 | Cit Alcatel | Amplificateur optique en semi-conducteur |
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2000
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-
2001
- 2001-08-20 US US10/111,053 patent/US6867911B2/en not_active Expired - Fee Related
- 2001-08-20 JP JP2002522037A patent/JP2004507892A/ja not_active Withdrawn
- 2001-08-20 EP EP01963108A patent/EP1314230A1/fr not_active Withdrawn
- 2001-08-20 WO PCT/FR2001/002630 patent/WO2002017452A1/fr not_active Application Discontinuation
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US5982531A (en) * | 1996-03-05 | 1999-11-09 | Alcatel Optronics | Semiconductor optical amplifier |
JPH10215022A (ja) * | 1997-01-31 | 1998-08-11 | Kagaku Gijutsu Shinko Jigyodan | 半導体レーザー及び単一偏光モード光の発生方法 |
JPH1117260A (ja) * | 1997-06-24 | 1999-01-22 | Nec Corp | 半導体光増幅器、その製造方法及び利得の偏光依存性の補償方法 |
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Title |
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Also Published As
Publication number | Publication date |
---|---|
US20020154392A1 (en) | 2002-10-24 |
US6867911B2 (en) | 2005-03-15 |
FR2813449A1 (fr) | 2002-03-01 |
JP2004507892A (ja) | 2004-03-11 |
FR2813449B1 (fr) | 2003-01-17 |
EP1314230A1 (fr) | 2003-05-28 |
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