DE3850600D1 - Halbleiter-Laserdioden-Vielfachanordnung. - Google Patents
Halbleiter-Laserdioden-Vielfachanordnung.Info
- Publication number
- DE3850600D1 DE3850600D1 DE3850600T DE3850600T DE3850600D1 DE 3850600 D1 DE3850600 D1 DE 3850600D1 DE 3850600 T DE3850600 T DE 3850600T DE 3850600 T DE3850600 T DE 3850600T DE 3850600 D1 DE3850600 D1 DE 3850600D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser diode
- diode array
- array
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08709312A GB2203891A (en) | 1987-04-21 | 1987-04-21 | Semiconductor diode laser array |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3850600D1 true DE3850600D1 (de) | 1994-08-18 |
Family
ID=10616046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3850600T Expired - Lifetime DE3850600D1 (de) | 1987-04-21 | 1988-04-07 | Halbleiter-Laserdioden-Vielfachanordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4975923A (de) |
EP (1) | EP0288184B1 (de) |
DE (1) | DE3850600D1 (de) |
GB (1) | GB2203891A (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5345466A (en) * | 1992-11-12 | 1994-09-06 | Hughes Aircraft Company | Curved grating surface emitting distributed feedback semiconductor laser |
JPH0750449A (ja) * | 1993-08-04 | 1995-02-21 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
US5727013A (en) * | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
US5734672A (en) * | 1996-08-06 | 1998-03-31 | Cutting Edge Optronics, Inc. | Smart laser diode array assembly and operating method using same |
US6061378A (en) * | 1997-05-13 | 2000-05-09 | Cutting Edge Optronics, Inc. | Multiple resonant cavity solid-state laser |
US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
US5913108A (en) * | 1998-04-30 | 1999-06-15 | Cutting Edge Optronics, Inc. | Laser diode packaging |
US6636538B1 (en) | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
WO2001013480A1 (en) | 1999-08-13 | 2001-02-22 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
US6782027B2 (en) | 2000-12-29 | 2004-08-24 | Finisar Corporation | Resonant reflector for use with optoelectronic devices |
US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
TWI227799B (en) | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
US6836501B2 (en) | 2000-12-29 | 2004-12-28 | Finisar Corporation | Resonant reflector for increased wavelength and polarization control |
EP1221629B1 (de) * | 2001-01-08 | 2003-03-26 | Alcatel | Optische Wellenleitervorrichtung mit Fasergitter und Verfahren zu deren Herstellung |
US6700913B2 (en) | 2001-05-29 | 2004-03-02 | Northrop Grumman Corporation | Low cost high integrity diode laser array |
US7457340B2 (en) | 2002-01-18 | 2008-11-25 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
US6885686B2 (en) * | 2002-01-18 | 2005-04-26 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
US6813293B2 (en) | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
US7170919B2 (en) | 2003-06-23 | 2007-01-30 | Northrop Grumman Corporation | Diode-pumped solid-state laser gain module |
US7495848B2 (en) | 2003-07-24 | 2009-02-24 | Northrop Grumman Corporation | Cast laser optical bench |
US7829912B2 (en) | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
US7305016B2 (en) * | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
US7403552B2 (en) * | 2006-03-10 | 2008-07-22 | Wisconsin Alumni Research Foundation | High efficiency intersubband semiconductor lasers |
US7457338B2 (en) * | 2006-04-19 | 2008-11-25 | Wisconsin Alumni Research Foundation | Quantum well lasers with strained quantum wells and dilute nitride barriers |
US7656915B2 (en) | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
US7408966B2 (en) * | 2006-08-18 | 2008-08-05 | Wisconsin Alumni Research Foundation | Intersubband quantum box stack lasers |
US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
US7724791B2 (en) | 2008-01-18 | 2010-05-25 | Northrop Grumman Systems Corporation | Method of manufacturing laser diode packages and arrays |
US8345720B2 (en) | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
US8718111B1 (en) * | 2011-05-27 | 2014-05-06 | Clemson University | Diode laser |
CN102611002B (zh) * | 2012-03-23 | 2013-11-27 | 中国科学院长春光学精密机械与物理研究所 | 低发散角全布拉格反射波导半导体激光器阵列 |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
CN113092411B (zh) * | 2018-10-12 | 2022-11-11 | 上海禾赛科技有限公司 | 一种基于激光器阵列实现接收光强自稳定的装置及方法 |
CN110112650B (zh) * | 2019-05-13 | 2020-06-02 | 苏州长光华芯半导体激光创新研究院有限公司 | 一种高功率半导体芯片及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1513573A (en) * | 1974-08-22 | 1978-06-07 | Xerox Corp | Electrically pumpable feedback solid-state diode laser |
US4006432A (en) * | 1974-10-15 | 1977-02-01 | Xerox Corporation | Integrated grating output coupler in diode lasers |
US3969686A (en) * | 1975-03-26 | 1976-07-13 | Xerox Corporation | Beam collimation using multiple coupled elements |
JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
JPS60186083A (ja) * | 1985-01-31 | 1985-09-21 | Hitachi Ltd | 分布帰還形半導体レーザ素子 |
GB8522308D0 (en) * | 1985-09-09 | 1985-10-16 | British Telecomm | Semiconductor lasers |
US4719635A (en) * | 1986-02-10 | 1988-01-12 | Rockwell International Corporation | Frequency and phase locking method for laser array |
JP2513186B2 (ja) * | 1986-07-28 | 1996-07-03 | ソニー株式会社 | 分布帰還型半導体レ―ザの製造方法 |
-
1987
- 1987-04-21 GB GB08709312A patent/GB2203891A/en active Pending
-
1988
- 1988-04-07 DE DE3850600T patent/DE3850600D1/de not_active Expired - Lifetime
- 1988-04-07 EP EP88303113A patent/EP0288184B1/de not_active Expired - Lifetime
-
1990
- 1990-03-05 US US07/490,542 patent/US4975923A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0288184A3 (en) | 1989-06-07 |
GB8709312D0 (en) | 1987-05-28 |
JPS642387A (en) | 1989-01-06 |
US4975923A (en) | 1990-12-04 |
EP0288184B1 (de) | 1994-07-13 |
GB2203891A (en) | 1988-10-26 |
EP0288184A2 (de) | 1988-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |