FR2585522B1 - Laser semi-conducteur - Google Patents

Laser semi-conducteur

Info

Publication number
FR2585522B1
FR2585522B1 FR8610793A FR8610793A FR2585522B1 FR 2585522 B1 FR2585522 B1 FR 2585522B1 FR 8610793 A FR8610793 A FR 8610793A FR 8610793 A FR8610793 A FR 8610793A FR 2585522 B1 FR2585522 B1 FR 2585522B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8610793A
Other languages
English (en)
Other versions
FR2585522A1 (fr
Inventor
Masao Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2585522A1 publication Critical patent/FR2585522A1/fr
Application granted granted Critical
Publication of FR2585522B1 publication Critical patent/FR2585522B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
FR8610793A 1985-07-26 1986-07-25 Laser semi-conducteur Expired - Fee Related FR2585522B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60166325A JPH0728084B2 (ja) 1985-07-26 1985-07-26 半導体レーザー

Publications (2)

Publication Number Publication Date
FR2585522A1 FR2585522A1 (fr) 1987-01-30
FR2585522B1 true FR2585522B1 (fr) 1994-07-08

Family

ID=15829263

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8610793A Expired - Fee Related FR2585522B1 (fr) 1985-07-26 1986-07-25 Laser semi-conducteur

Country Status (7)

Country Link
US (1) US4740977A (fr)
JP (1) JPH0728084B2 (fr)
KR (1) KR950000115B1 (fr)
DE (1) DE3625145C2 (fr)
FR (1) FR2585522B1 (fr)
GB (1) GB2178595B (fr)
NL (1) NL194185C (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766976B2 (ja) * 1987-02-27 1995-07-19 三菱電機株式会社 赤外線検知器
GB2226447B (en) * 1987-02-27 1990-10-31 Mitsubishi Electric Corp An infrared ray detector
ATE189748T1 (de) * 1988-01-06 2000-02-15 Telstra Corp Ltd Strominjektionslaser
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US4924471A (en) * 1989-03-13 1990-05-08 Amoco Corporation Method for increasing the output power of a laser diode
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
EP0695006B1 (fr) * 1990-05-09 1998-03-04 Sharp Kabushiki Kaisha Méthode de production d'un composé laser à semi-conducteur
US5200972A (en) * 1991-06-17 1993-04-06 The United States Of America As Represented By The Secretary Of The Navy ND laser with co-doped ion(s) pumped by visible laser diodes
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JPH08264898A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp 半導体レーザ装置
US6298078B1 (en) * 1999-02-25 2001-10-02 Opto Power Corporation Laser diodes with composite material systems which decouple refractive index and band gap profiles
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6646777B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Optical isolator with improved mounting characteristics
US6773532B2 (en) * 2002-02-27 2004-08-10 Jds Uniphase Corporation Method for improving heat dissipation in optical transmitter
JP2005167137A (ja) * 2003-12-05 2005-06-23 Mitsubishi Electric Corp 半導体レーザ装置
KR100689501B1 (ko) * 2005-02-03 2007-03-02 삼성전자주식회사 광대역 반도체 광소자
JP2007053242A (ja) * 2005-08-18 2007-03-01 Fuji Xerox Co Ltd 半導体レーザ装置およびその製造方法
KR101271650B1 (ko) 2012-08-31 2013-06-11 노태종 드럼식 탄창
KR102493689B1 (ko) * 2020-12-28 2023-01-31 배주환 총열 교체형 소총에 사용되는 드럼 탄창

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263835A (en) * 1970-10-15 1972-02-16 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
CA1137605A (fr) * 1979-01-15 1982-12-14 Donald R. Scifres Laser a grande puissance
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS5637687A (en) * 1979-09-04 1981-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5688388A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
JPH0654821B2 (ja) * 1985-06-05 1994-07-20 日本電気株式会社 半導体発光素子

Also Published As

Publication number Publication date
NL194185B (nl) 2001-04-02
KR950000115B1 (ko) 1995-01-09
DE3625145A1 (de) 1987-01-29
JPS6226885A (ja) 1987-02-04
NL8601929A (nl) 1987-02-16
DE3625145C2 (de) 1999-12-16
KR870001687A (ko) 1987-03-17
GB2178595B (en) 1988-07-20
FR2585522A1 (fr) 1987-01-30
GB8618049D0 (en) 1986-09-03
US4740977A (en) 1988-04-26
NL194185C (nl) 2001-08-03
JPH0728084B2 (ja) 1995-03-29
GB2178595A (en) 1987-02-11

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Legal Events

Date Code Title Description
ST Notification of lapse