DE3680356D1 - Halbleiterlaser-vorrichtung. - Google Patents

Halbleiterlaser-vorrichtung.

Info

Publication number
DE3680356D1
DE3680356D1 DE8686301095T DE3680356T DE3680356D1 DE 3680356 D1 DE3680356 D1 DE 3680356D1 DE 8686301095 T DE8686301095 T DE 8686301095T DE 3680356 T DE3680356 T DE 3680356T DE 3680356 D1 DE3680356 D1 DE 3680356D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686301095T
Other languages
English (en)
Inventor
Shinji Kyobate Mansion Kaneiwa
Haruhisa Takiguchi
Toshihiko Yoshida
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3680356D1 publication Critical patent/DE3680356D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686301095T 1985-02-19 1986-02-18 Halbleiterlaser-vorrichtung. Expired - Lifetime DE3680356D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033603A JPS61190994A (ja) 1985-02-19 1985-02-19 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3680356D1 true DE3680356D1 (de) 1991-08-29

Family

ID=12391051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686301095T Expired - Lifetime DE3680356D1 (de) 1985-02-19 1986-02-18 Halbleiterlaser-vorrichtung.

Country Status (4)

Country Link
US (1) US4745616A (de)
EP (1) EP0192451B1 (de)
JP (1) JPS61190994A (de)
DE (1) DE3680356D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
JPH0240984A (ja) * 1988-07-30 1990-02-09 Tokyo Univ 半導体分布帰還型レーザ装置
US5292685A (en) * 1991-07-24 1994-03-08 Sharp Kabushiki Kaisha Method for producing a distributed feedback semiconductor laser device
EP1130726A3 (de) * 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Halbleiterlaservorrichtung mit verteilter Rückkopplung und Mehrwellenlängenvielfachlaser
TW201029218A (en) * 2009-01-16 2010-08-01 Univ Nat Central Optical diode structure and manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ

Also Published As

Publication number Publication date
EP0192451A3 (en) 1987-10-14
JPS61190994A (ja) 1986-08-25
US4745616A (en) 1988-05-17
EP0192451A2 (de) 1986-08-27
JPH0248151B2 (de) 1990-10-24
EP0192451B1 (de) 1991-07-24

Similar Documents

Publication Publication Date Title
DE3687329D1 (de) Halbleiterlaser-vorrichtung.
DE3584702D1 (de) Halbleiterlaservorrichtung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
DE3787769D1 (de) Halbleiterlaservorrichtung.
DE3676867D1 (de) Halbleiterlaser.
DE3650012D1 (de) Halbleitervorrichtung.
DE3685466D1 (de) Halbleiterlaser-vorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3681799D1 (de) Halbleiter-bearbeitungseinrichtung.
DE3587748D1 (de) Halbleiterlaseranordnung.
DE3750995D1 (de) Halbleiterlaservorrichtung.
DE3786339D1 (de) Halbleiterlaservorrichtung.
DE3688064D1 (de) Halbleitervorrichtung.
DE3674959D1 (de) Halbleiterlaser.
NL194185B (nl) Halfgeleiderlaserinrichting.
DE3687102D1 (de) Halbleiterlaser.
DE3688002D1 (de) Halbleiter-laser.
DE3680223D1 (de) Halbleiterlaser-vorrichtung.
DE3688943D1 (de) Halbleiterlaservorrichtung.
DE3789832D1 (de) Halbleiterlaser-Vorrichtung.
DE3650379D1 (de) Halbleiterlaservorrichtung.
DE3776186D1 (de) Halbleiterlaser-vorrichtung.
DE3688017D1 (de) Halbleiterlaser-vorrichtung.
DE3668099D1 (de) Laserhalbleiteranordnung.
DE3581076D1 (de) Halbleiterlaser-vorrichtungen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition