DE3686838D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3686838D1
DE3686838D1 DE8686304672T DE3686838T DE3686838D1 DE 3686838 D1 DE3686838 D1 DE 3686838D1 DE 8686304672 T DE8686304672 T DE 8686304672T DE 3686838 T DE3686838 T DE 3686838T DE 3686838 D1 DE3686838 D1 DE 3686838D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304672T
Other languages
English (en)
Other versions
DE3686838T2 (de
Inventor
Osamu Yamamoto
Hiroshi Hayashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3686838D1 publication Critical patent/DE3686838D1/de
Application granted granted Critical
Publication of DE3686838T2 publication Critical patent/DE3686838T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686304672T 1985-06-18 1986-06-17 Halbleiterlaservorrichtung. Expired - Fee Related DE3686838T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60134867A JPS61290787A (ja) 1985-06-18 1985-06-18 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3686838D1 true DE3686838D1 (de) 1992-11-05
DE3686838T2 DE3686838T2 (de) 1993-02-25

Family

ID=15138329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304672T Expired - Fee Related DE3686838T2 (de) 1985-06-18 1986-06-17 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4773077A (de)
EP (1) EP0206745B1 (de)
JP (1) JPS61290787A (de)
DE (1) DE3686838T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2572050B2 (ja) * 1986-11-05 1997-01-16 シャープ株式会社 導波路型光ヘツド
JPS63213389A (ja) * 1987-02-27 1988-09-06 Sharp Corp 半導体レ−ザ装置
DE3738053A1 (de) * 1987-11-09 1989-05-18 Siemens Ag Laseranordnung mit mindestens einem laserresonator und einem damit verkoppelten passiven resonator
US4983035A (en) * 1988-06-24 1991-01-08 Reiton Ltd. Laser measuring devices
DE3943470A1 (de) * 1989-05-29 1990-12-13 Rainer Thiessen Gegenstands-naeherungs und troepfchendetektor
DE3917388C1 (de) * 1989-05-29 1990-11-29 Rainer 8000 Muenchen De Thiessen
US7862579B2 (en) * 2004-07-28 2011-01-04 Ethicon Endo-Surgery, Inc. Electroactive polymer-based articulation mechanism for grasper
JP6220864B2 (ja) 2012-05-08 2017-10-25 メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド ビーム形状の改良を伴うレーザ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111391A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体レ−ザ装置
EP0108562A1 (de) * 1982-11-05 1984-05-16 British Telecommunications Verfahren und Vorrichtung zum Steuern von Lasern
JP3991393B2 (ja) * 1997-06-11 2007-10-17 住友電気工業株式会社 化合物半導体の製造装置

Also Published As

Publication number Publication date
EP0206745A2 (de) 1986-12-30
EP0206745A3 (en) 1988-01-27
US4773077A (en) 1988-09-20
EP0206745B1 (de) 1992-09-30
DE3686838T2 (de) 1993-02-25
JPS61290787A (ja) 1986-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee