DE3687480D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3687480D1
DE3687480D1 DE8686304236T DE3687480T DE3687480D1 DE 3687480 D1 DE3687480 D1 DE 3687480D1 DE 8686304236 T DE8686304236 T DE 8686304236T DE 3687480 T DE3687480 T DE 3687480T DE 3687480 D1 DE3687480 D1 DE 3687480D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304236T
Other languages
English (en)
Other versions
DE3687480T2 (de
Inventor
Toshihiko Yoshida
Haruhisa Takiguchi
Shinji Kaneiwa
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3687480D1 publication Critical patent/DE3687480D1/de
Application granted granted Critical
Publication of DE3687480T2 publication Critical patent/DE3687480T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686304236T 1985-06-10 1986-06-04 Halbleiterlaservorrichtung. Expired - Lifetime DE3687480T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60126954A JPS61284987A (ja) 1985-06-10 1985-06-10 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3687480D1 true DE3687480D1 (de) 1993-02-25
DE3687480T2 DE3687480T2 (de) 1993-06-03

Family

ID=14948007

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304236T Expired - Lifetime DE3687480T2 (de) 1985-06-10 1986-06-04 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4730329A (de)
EP (1) EP0205307B1 (de)
JP (1) JPS61284987A (de)
DE (1) DE3687480T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839900A (en) * 1985-08-21 1989-06-13 Sharp Kabushiki Kaisha Buried type semiconductor laser device
JPS63144589A (ja) * 1986-12-09 1988-06-16 Sharp Corp 半導体レ−ザ素子
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
DE3714523A1 (de) * 1987-04-30 1988-11-10 Siemens Ag Laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und verfahren zu deren herstellung
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
JPH0548210A (ja) * 1991-08-09 1993-02-26 Mitsubishi Electric Corp 半導体レーザ装置
US5241552A (en) * 1991-10-22 1993-08-31 At&T Bell Laboratories Compensated laser structure for analog communication applications
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow
JPS56155583A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Manufacture of semiconductor laser
JPS5769791A (en) * 1980-10-17 1982-04-28 Nec Corp Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof
US4470143A (en) * 1981-08-18 1984-09-04 Nippon Electric Co., Ltd. Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector
JPS5848491A (ja) * 1981-09-17 1983-03-22 Nec Corp 埋め込み型半導体レ−ザ
JPS58200584A (ja) * 1982-05-18 1983-11-22 Fujitsu Ltd 半導体発光装置
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
JPS61204993A (ja) * 1985-03-08 1986-09-11 Fujitsu Ltd 半導体発光装置

Also Published As

Publication number Publication date
EP0205307A3 (en) 1988-01-27
JPS61284987A (ja) 1986-12-15
EP0205307A2 (de) 1986-12-17
US4730329A (en) 1988-03-08
DE3687480T2 (de) 1993-06-03
EP0205307B1 (de) 1993-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition