DE3688951T2 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3688951T2
DE3688951T2 DE86304917T DE3688951T DE3688951T2 DE 3688951 T2 DE3688951 T2 DE 3688951T2 DE 86304917 T DE86304917 T DE 86304917T DE 3688951 T DE3688951 T DE 3688951T DE 3688951 T2 DE3688951 T2 DE 3688951T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86304917T
Other languages
English (en)
Other versions
DE3688951D1 (de
Inventor
Saburo Yamamoto
Osamu Yamamoto
Hiroshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3688951D1 publication Critical patent/DE3688951D1/de
Publication of DE3688951T2 publication Critical patent/DE3688951T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE86304917T 1985-06-26 1986-06-25 Halbleiterlaservorrichtung. Expired - Fee Related DE3688951T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60141376A JPS621296A (ja) 1985-06-26 1985-06-26 多端子型半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3688951D1 DE3688951D1 (de) 1993-10-07
DE3688951T2 true DE3688951T2 (de) 1993-12-16

Family

ID=15290558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86304917T Expired - Fee Related DE3688951T2 (de) 1985-06-26 1986-06-25 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4773076A (de)
EP (1) EP0206818B1 (de)
JP (1) JPS621296A (de)
DE (1) DE3688951T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3738053A1 (de) * 1987-11-09 1989-05-18 Siemens Ag Laseranordnung mit mindestens einem laserresonator und einem damit verkoppelten passiven resonator
US4897361A (en) * 1987-12-14 1990-01-30 American Telephone & Telegraph Company, At&T Bell Laboratories Patterning method in the manufacture of miniaturized devices
DE3834929A1 (de) * 1988-10-13 1990-04-19 Siemens Ag Wellenleiterreflektor fuer optoelektronische anwendungen und laser
DE3836802A1 (de) * 1988-10-28 1990-05-03 Siemens Ag Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus
US4903275A (en) * 1989-03-20 1990-02-20 General Electric Company Phase modulation semiconductor laser array
EP0390200B1 (de) * 1989-03-31 1994-06-08 Canon Kabushiki Kaisha Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen
US5001720A (en) * 1989-12-26 1991-03-19 At&T Bell Laboratories Hybrid narrow linewidth semiconductor laser with uniform FM response
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
JP2001244570A (ja) * 2000-02-29 2001-09-07 Sony Corp 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法
WO2006132660A2 (en) * 2004-09-29 2006-12-14 California Institute Of Technology Material processing method for semiconductor lasers
JP5293052B2 (ja) * 2008-09-29 2013-09-18 富士通セミコンダクター株式会社 固体撮像素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361987A (en) * 1976-11-15 1978-06-02 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5897888A (ja) * 1981-12-08 1983-06-10 Nec Corp 半導体レ−ザ
US4562569A (en) * 1982-01-05 1985-12-31 California Institute Of Technology Tandem coupled cavity lasers with separate current control and high parasitic resistance between them for bistability and negative resistance characteristics and use thereof for optical disc readout
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications
JPS6034089A (ja) * 1983-08-04 1985-02-21 Nec Corp 光双安定半導体レ−ザ
JPS6063978A (ja) * 1983-09-17 1985-04-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60150682A (ja) * 1984-01-17 1985-08-08 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0206818B1 (de) 1993-09-01
JPS621296A (ja) 1987-01-07
DE3688951D1 (de) 1993-10-07
EP0206818A3 (en) 1988-05-04
EP0206818A2 (de) 1986-12-30
US4773076A (en) 1988-09-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee