KR870006688A - 반도체 레이저장치 - Google Patents

반도체 레이저장치

Info

Publication number
KR870006688A
KR870006688A KR1019860010753A KR860010753A KR870006688A KR 870006688 A KR870006688 A KR 870006688A KR 1019860010753 A KR1019860010753 A KR 1019860010753A KR 860010753 A KR860010753 A KR 860010753A KR 870006688 A KR870006688 A KR 870006688A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
KR1019860010753A
Other languages
English (en)
Other versions
KR940011107B1 (ko
Inventor
가즈히사 우오미
미즈즈 요시자와
유이지 오노
나오기 지노네
다가지 가지하라
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR870006688A publication Critical patent/KR870006688A/ko
Application granted granted Critical
Publication of KR940011107B1 publication Critical patent/KR940011107B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
KR1019860010753A 1985-12-20 1986-12-16 반도체 레이저장치 KR940011107B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60285519A JP2539368B2 (ja) 1985-12-20 1985-12-20 半導体レ−ザ装置
JP60-285519 1985-12-20

Publications (2)

Publication Number Publication Date
KR870006688A true KR870006688A (ko) 1987-07-14
KR940011107B1 KR940011107B1 (ko) 1994-11-23

Family

ID=17692581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860010753A KR940011107B1 (ko) 1985-12-20 1986-12-16 반도체 레이저장치

Country Status (5)

Country Link
US (1) US4797891A (ko)
EP (1) EP0227426B1 (ko)
JP (1) JP2539368B2 (ko)
KR (1) KR940011107B1 (ko)
DE (1) DE3689742T2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768672B2 (ja) * 1987-09-30 1998-06-25 株式会社日立製作所 面発光半導体レーザ
JPH0196629A (ja) * 1987-10-08 1989-04-14 Fuji Photo Film Co Ltd 光波長変換モジュール
JP2728672B2 (ja) * 1988-02-22 1998-03-18 株式会社東芝 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法
CA2011155C (en) * 1989-03-06 1994-04-19 Misuzu Sagawa Semiconductor laser device
US4903275A (en) * 1989-03-20 1990-02-20 General Electric Company Phase modulation semiconductor laser array
US5082595A (en) * 1990-01-31 1992-01-21 Adhesives Research, Inc. Method of making an electrically conductive pressure sensitive adhesive
DE10239003A1 (de) 2001-09-17 2003-04-03 Heidelberger Druckmasch Ag Mehrstrahllaserlichtquelle mit variablem Laserlichtquellenabstand zur Bebilderung von Druckformen
US7555896B2 (en) 2004-03-19 2009-07-07 Ford Global Technologies, Llc Cylinder deactivation for an internal combustion engine
JP7065330B2 (ja) * 2016-08-30 2022-05-12 パナソニックＩｐマネジメント株式会社 半導体レーザ素子
JP2018182306A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 光半導体素子、及び光半導体素子の駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164590A (en) * 1981-04-01 1982-10-09 Fujitsu Ltd Photosemiconductor device
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
JPS57198680A (en) * 1981-05-30 1982-12-06 Fujitsu Ltd Optical semiconductor device
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
US4730326A (en) * 1984-09-12 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser array device
JPH0666511B2 (ja) * 1984-11-19 1994-08-24 キヤノン株式会社 半導体装置
US4674096A (en) * 1985-03-04 1987-06-16 California Institute Of Technology Lateral coupled cavity semiconductor laser

Also Published As

Publication number Publication date
DE3689742T2 (de) 1994-06-30
EP0227426A3 (en) 1988-07-27
KR940011107B1 (ko) 1994-11-23
EP0227426B1 (en) 1994-03-23
EP0227426A2 (en) 1987-07-01
US4797891A (en) 1989-01-10
DE3689742D1 (de) 1994-04-28
JPS62145792A (ja) 1987-06-29
JP2539368B2 (ja) 1996-10-02

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee