NL194832B - Werkwijze voor het vormen van een dunne-halfgeleiderfilm. - Google Patents

Werkwijze voor het vormen van een dunne-halfgeleiderfilm.

Info

Publication number
NL194832B
NL194832B NL8503269A NL8503269A NL194832B NL 194832 B NL194832 B NL 194832B NL 8503269 A NL8503269 A NL 8503269A NL 8503269 A NL8503269 A NL 8503269A NL 194832 B NL194832 B NL 194832B
Authority
NL
Netherlands
Prior art keywords
forming
semiconductor film
thin semiconductor
thin
film
Prior art date
Application number
NL8503269A
Other languages
English (en)
Other versions
NL194832C (nl
NL8503269A (nl
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59249406A external-priority patent/JPH0824103B2/ja
Priority claimed from JP59252882A external-priority patent/JPH0817157B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL8503269A publication Critical patent/NL8503269A/nl
Publication of NL194832B publication Critical patent/NL194832B/nl
Application granted granted Critical
Publication of NL194832C publication Critical patent/NL194832C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
NL8503269A 1984-11-26 1985-11-26 Werkwijze voor het vormen van een dunne-halfgeleiderfilm. NL194832C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59249406A JPH0824103B2 (ja) 1984-11-26 1984-11-26 薄膜トランジスタの製造方法
JP24940684 1984-11-26
JP25288284 1984-11-30
JP59252882A JPH0817157B2 (ja) 1984-11-30 1984-11-30 薄膜トランジスタの製造方法

Publications (3)

Publication Number Publication Date
NL8503269A NL8503269A (nl) 1986-06-16
NL194832B true NL194832B (nl) 2002-12-02
NL194832C NL194832C (nl) 2003-04-03

Family

ID=26539269

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8503269A NL194832C (nl) 1984-11-26 1985-11-26 Werkwijze voor het vormen van een dunne-halfgeleiderfilm.

Country Status (7)

Country Link
US (1) US4693759A (nl)
AT (1) AT399421B (nl)
CA (1) CA1239706A (nl)
DE (1) DE3541587C2 (nl)
FR (1) FR2573916B1 (nl)
GB (1) GB2169442B (nl)
NL (1) NL194832C (nl)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US4946735A (en) * 1986-02-10 1990-08-07 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US5081062A (en) * 1987-08-27 1992-01-14 Prahalad Vasudev Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies
US4904611A (en) * 1987-09-18 1990-02-27 Xerox Corporation Formation of large grain polycrystalline films
JPH01244664A (ja) * 1988-03-25 1989-09-29 Sanyo Electric Co Ltd 薄膜トランジスタ
SG108807A1 (en) 1989-02-14 2005-02-28 Seiko Epson Corp A semiconductor device and its manufacturing method
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JPH0456325A (ja) * 1990-06-26 1992-02-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5169806A (en) * 1990-09-26 1992-12-08 Xerox Corporation Method of making amorphous deposited polycrystalline silicon thermal ink jet transducers
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5298455A (en) * 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
JP3056813B2 (ja) 1991-03-25 2000-06-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその製造方法
US6556257B2 (en) * 1991-09-05 2003-04-29 Sony Corporation Liquid crystal display device
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
JP2935446B2 (ja) * 1992-02-28 1999-08-16 カシオ計算機株式会社 半導体装置
US5904550A (en) * 1992-02-28 1999-05-18 Casio Computer Co., Ltd. Method of producing a semiconductor device
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5563093A (en) * 1993-01-28 1996-10-08 Kawasaki Steel Corporation Method of manufacturing fet semiconductor devices with polysilicon gate having large grain sizes
KR100255689B1 (ko) * 1993-05-27 2000-05-01 윤종용 반도체 레이져 소자 및 그 제조방법
JP3157985B2 (ja) * 1993-06-10 2001-04-23 三菱電機株式会社 薄膜トランジスタおよびその製造方法
TW295703B (nl) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3599290B2 (ja) * 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
JPH08148430A (ja) * 1994-11-24 1996-06-07 Sony Corp 多結晶半導体薄膜の作成方法
KR100208439B1 (ko) * 1995-05-04 1999-07-15 김영환 반도체 소자의 폴리실리콘층 형성방법
DE19681430B4 (de) * 1995-06-06 2006-10-26 Asahi Kasei Microsystems Co., Ltd. Verfahren zur Herstellung eines Halbleiterbauelements
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US6180539B1 (en) * 1998-12-08 2001-01-30 United Microelectronics Corp. Method of forming an inter-poly oxide layer
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
KR100324871B1 (ko) * 1999-06-25 2002-02-28 구본준, 론 위라하디락사 박막트랜지스터 제조방법
US6726549B2 (en) * 2000-09-08 2004-04-27 Cold Jet, Inc. Particle blast apparatus
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
TW200411726A (en) * 2002-12-31 2004-07-01 Au Optronics Corp Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method
JP4655495B2 (ja) * 2004-03-31 2011-03-23 東京エレクトロン株式会社 成膜方法
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
FR2968316B1 (fr) * 2010-12-01 2013-06-28 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains
KR20120127009A (ko) * 2011-05-13 2012-11-21 에스케이하이닉스 주식회사 반도체장치 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
JPS5618430A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
US4385937A (en) * 1980-05-20 1983-05-31 Tokyo Shibaura Denki Kabushiki Kaisha Regrowing selectively formed ion amorphosized regions by thermal gradient
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS59205712A (ja) * 1983-04-30 1984-11-21 Fujitsu Ltd 半導体装置の製造方法
JPS60134470A (ja) * 1983-12-22 1985-07-17 Seiko Epson Corp 半導体装置
US4588447A (en) * 1984-06-25 1986-05-13 Rockwell International Corporation Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films
US4584028A (en) * 1984-09-24 1986-04-22 Rca Corporation Neutralization of acceptor levels in silicon by atomic hydrogen

Also Published As

Publication number Publication date
DE3541587C2 (de) 1998-04-23
FR2573916B1 (fr) 1991-06-28
DE3541587A1 (de) 1986-05-28
ATA343185A (de) 1994-09-15
GB2169442B (en) 1988-01-06
AT399421B (de) 1995-05-26
GB8529007D0 (en) 1986-01-02
US4693759A (en) 1987-09-15
FR2573916A1 (fr) 1986-05-30
NL194832C (nl) 2003-04-03
CA1239706A (en) 1988-07-26
NL8503269A (nl) 1986-06-16
GB2169442A (en) 1986-07-09

Similar Documents

Publication Publication Date Title
NL194832B (nl) Werkwijze voor het vormen van een dunne-halfgeleiderfilm.
NL188550C (nl) Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
NL190645B (nl) Werkwijze voor het vormen van een beschermende diffussielaag.
NL190256C (nl) Werkwijze voor het vervaardigen van een fotogevoelige inrichting.
NL8007022A (nl) Pijpplaat; werkwijze voor het vervaardigen van een pijpplaat.
NL194114B (nl) Werkwijze voor het vervaardigen van een prothesedeel.
NL191424C (nl) Werkwijze voor het vervaardigen van een geintegreerde schakeling.
NL191796C (nl) Werkwijze voor het verstevigen van een slappe bodem.
NL187233C (nl) Werkwijze voor het vervaardigen van poreuze films.
NL188432C (nl) Werkwijze voor het vervaardigen van een mosfet.
NL188774C (nl) Werkwijze voor het vervaardigen van een samengestelde halfgeleiderinrichting.
NL193393B (nl) Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
NL7900497A (nl) Werkwijze voor het positioneren van een substraat.
NL189634C (nl) Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
NL188426C (nl) Werkwijze voor het vervaardigen van een hoogdruk- of reliefdrukvorm.
NL193722B (nl) Werkwijze voor het bekleden van een substraat.
NL194524B (nl) Werkwijze voor het vervaardigen van een dunne-filmtransistor.
NL188953C (nl) Werkwijze voor het vervaardigen van een elektrode.
NL187169C (nl) Werkwijze voor het bekleden van een oppervlak.
NL189425C (nl) Werkwijze voor het vervaardigen van een spiraalvormig gewikkelde pakking.
NL185578C (nl) Werkwijze voor het vervaardigen van een synthetisch crepegaren.
NL193793B (nl) Werkwijze voor het vervaardigen van spaanplaten.
NL189317C (nl) Werkwijze voor het vervaardigen van staafvormig materiaal.
NL176164C (nl) Werkwijze voor het vervaardigen van een steen.
NL186207B (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20051126