NL189634C - Werkwijze voor het vervaardigen van een halfgeleidersubstraat. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleidersubstraat.Info
- Publication number
- NL189634C NL189634C NLAANVRAGE8600983,A NL8600983A NL189634C NL 189634 C NL189634 C NL 189634C NL 8600983 A NL8600983 A NL 8600983A NL 189634 C NL189634 C NL 189634C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor substrate
- semiconductor
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8260985 | 1985-04-19 | ||
JP60082609A JPH0618234B2 (ja) | 1985-04-19 | 1985-04-19 | 半導体基板の接合方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8600983A NL8600983A (nl) | 1986-11-17 |
NL189634B NL189634B (nl) | 1993-01-04 |
NL189634C true NL189634C (nl) | 1993-06-01 |
Family
ID=13779215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8600983,A NL189634C (nl) | 1985-04-19 | 1986-04-18 | Werkwijze voor het vervaardigen van een halfgeleidersubstraat. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4978379A (nl) |
JP (1) | JPH0618234B2 (nl) |
KR (1) | KR900005890B1 (nl) |
CA (1) | CA1244968A (nl) |
DE (1) | DE3613215A1 (nl) |
NL (1) | NL189634C (nl) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2685819B2 (ja) * | 1988-03-31 | 1997-12-03 | 株式会社東芝 | 誘電体分離半導体基板とその製造方法 |
JPH07142571A (ja) * | 1993-11-12 | 1995-06-02 | Ube Ind Ltd | 複合半導体基板及びその製造方法 |
US5639325A (en) * | 1995-02-01 | 1997-06-17 | The Whitaker Corporation | Process for producing a glass-coated article |
JPH08264637A (ja) * | 1995-03-23 | 1996-10-11 | Ube Ind Ltd | 複合半導体基板 |
JPH08264636A (ja) * | 1995-03-23 | 1996-10-11 | Ube Ind Ltd | 複合半導体基板 |
JPH08264643A (ja) * | 1995-03-23 | 1996-10-11 | Ube Ind Ltd | 複合半導体基板 |
JP3841435B2 (ja) * | 1995-09-12 | 2006-11-01 | コーニング インコーポレイテッド | 溶融シリカガラスを製造するためのブール振動パターン |
EP0850199B1 (en) * | 1995-09-12 | 2005-12-28 | Corning Incorporated | Method and Furnace for the Production of Silica Glass containing less striae |
DE69629119T2 (de) * | 1995-09-12 | 2004-04-15 | Corning Inc. | Topf zum herstellen von silikaglas |
JPH10275752A (ja) | 1997-03-28 | 1998-10-13 | Ube Ind Ltd | 張合わせウエハ−及びその製造方法、基板 |
KR100499134B1 (ko) * | 2002-10-28 | 2005-07-04 | 삼성전자주식회사 | 압축 접합 방법 |
DE102007035788A1 (de) * | 2007-07-31 | 2009-02-05 | Robert Bosch Gmbh | Waferfügeverfahren, Waferverbund sowie Chip |
JP6742593B2 (ja) * | 2015-01-05 | 2020-08-19 | 日本電気硝子株式会社 | 支持ガラス基板の製造方法及び積層体の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2272342A (en) * | 1934-08-27 | 1942-02-10 | Corning Glass Works | Method of making a transparent article of silica |
US2239551A (en) * | 1939-04-22 | 1941-04-22 | Corning Glass Works | Method of making sealing glasses and seals for quartz lamps |
US3768991A (en) * | 1972-06-14 | 1973-10-30 | Diacon | Method for sealing an enclosure for an electronic component |
US3909332A (en) * | 1973-06-04 | 1975-09-30 | Gen Electric | Bonding process for dielectric isolation of single crystal semiconductor structures |
DE2738614A1 (de) * | 1976-09-01 | 1978-03-02 | Hitachi Ltd | Verfahren zum herstellen von halbleitersubstraten fuer integrierte halbleiterschaltkreise |
JPS5330477A (en) * | 1976-09-02 | 1978-03-22 | Agency Of Ind Science & Technol | Preparation of liquid drop |
JPS5357978A (en) * | 1976-11-05 | 1978-05-25 | Hitachi Ltd | Production of dielectric insulated and isolated substrate |
US4294602A (en) * | 1979-08-09 | 1981-10-13 | The Boeing Company | Electro-optically assisted bonding |
GB2060252B (en) * | 1979-09-17 | 1984-02-22 | Nippon Telegraph & Telephone | Mutually isolated complementary semiconductor elements |
US4363647A (en) * | 1981-05-14 | 1982-12-14 | Corning Glass Works | Method of making fused silica-containing material |
JPS5844723A (ja) * | 1981-09-11 | 1983-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
US4501060A (en) * | 1983-01-24 | 1985-02-26 | At&T Bell Laboratories | Dielectrically isolated semiconductor devices |
DD214836A1 (de) * | 1983-04-26 | 1984-10-24 | Werk Fernsehelektronik Veb | Verfahren zum verbinden und hermetisieren von substraten mittels glaslot |
-
1985
- 1985-04-19 JP JP60082609A patent/JPH0618234B2/ja not_active Expired - Lifetime
-
1986
- 1986-04-16 CA CA000506868A patent/CA1244968A/en not_active Expired
- 1986-04-16 KR KR1019860002933A patent/KR900005890B1/ko not_active IP Right Cessation
- 1986-04-18 NL NLAANVRAGE8600983,A patent/NL189634C/nl not_active IP Right Cessation
- 1986-04-18 DE DE19863613215 patent/DE3613215A1/de active Granted
-
1988
- 1988-10-31 US US07/266,304 patent/US4978379A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3613215C2 (nl) | 1989-07-20 |
US4978379A (en) | 1990-12-18 |
NL8600983A (nl) | 1986-11-17 |
CA1244968A (en) | 1988-11-15 |
DE3613215A1 (de) | 1986-10-23 |
NL189634B (nl) | 1993-01-04 |
KR860008607A (ko) | 1986-11-17 |
JPS61242033A (ja) | 1986-10-28 |
JPH0618234B2 (ja) | 1994-03-09 |
KR900005890B1 (ko) | 1990-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20060418 |