NL193801B - Inrichting voor het verwarmen van een cirkelvormig substraat. - Google Patents
Inrichting voor het verwarmen van een cirkelvormig substraat.Info
- Publication number
- NL193801B NL193801B NL8602358A NL8602358A NL193801B NL 193801 B NL193801 B NL 193801B NL 8602358 A NL8602358 A NL 8602358A NL 8602358 A NL8602358 A NL 8602358A NL 193801 B NL193801 B NL 193801B
- Authority
- NL
- Netherlands
- Prior art keywords
- heating
- circular substrate
- circular
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78473985 | 1985-10-07 | ||
US06/784,739 US4654509A (en) | 1985-10-07 | 1985-10-07 | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8602358A NL8602358A (nl) | 1987-05-04 |
NL193801B true NL193801B (nl) | 2000-07-03 |
NL193801C NL193801C (nl) | 2000-11-06 |
Family
ID=25133382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8602358A NL193801C (nl) | 1985-10-07 | 1986-09-17 | Inrichting voor het verwarmen van een cirkelvormig substraat. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4654509A (nl) |
JP (1) | JP2545371B2 (nl) |
DE (1) | DE3634131C2 (nl) |
FR (1) | FR2606880B3 (nl) |
GB (1) | GB2181459B (nl) |
NL (1) | NL193801C (nl) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4755654A (en) * | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
US4993355A (en) * | 1987-03-31 | 1991-02-19 | Epsilon Technology, Inc. | Susceptor with temperature sensing device |
US4821674A (en) * | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4836138A (en) * | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US5156820A (en) * | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
US5044943A (en) * | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
DE4202944C2 (de) * | 1992-02-01 | 1994-07-14 | Heraeus Quarzglas | Verfahren und Vorrichtung zum Erwärmen eines Materials |
US5434110A (en) * | 1992-06-15 | 1995-07-18 | Materials Research Corporation | Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates |
US5370739A (en) * | 1992-06-15 | 1994-12-06 | Materials Research Corporation | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD |
DE4306398A1 (de) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Vorrichtung zum Erwärmen eines Substrates |
US5318801A (en) * | 1993-05-18 | 1994-06-07 | United States Of America As Represented By The Secretary Of The Navy | Substrate temperature control apparatus and technique for CVD reactors |
US6113702A (en) | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
AU6962196A (en) | 1995-09-01 | 1997-03-27 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
JP3166065B2 (ja) * | 1996-02-08 | 2001-05-14 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3493880B2 (ja) * | 1996-02-28 | 2004-02-03 | 信越半導体株式会社 | 輻射加熱装置および加熱方法 |
SG71046A1 (en) * | 1996-10-10 | 2000-03-21 | Connector Systems Tech Nv | High density connector and method of manufacture |
US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
US5792273A (en) * | 1997-05-27 | 1998-08-11 | Memc Electric Materials, Inc. | Secondary edge reflector for horizontal reactor |
US5960158A (en) * | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US6316747B1 (en) * | 1998-03-02 | 2001-11-13 | Steag Rtp Systems Gmbh | Apparatus for the thermal treatment of substrates |
WO1999049101A1 (en) | 1998-03-23 | 1999-09-30 | Mattson Technology, Inc. | Apparatus and method for cvd and thermal processing of semiconductor substrates |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
US6127658A (en) * | 1998-08-04 | 2000-10-03 | Steag C.V.D. Systems, Ltd. | Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
US6771895B2 (en) | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
DE19923400A1 (de) | 1999-05-21 | 2000-11-30 | Steag Rtp Systems Gmbh | Vorrichtung und Verfahren zum thermischen Behandeln von Substraten |
US6666924B1 (en) * | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
DE10051125A1 (de) | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
US7108753B2 (en) * | 2003-10-29 | 2006-09-19 | Asm America, Inc. | Staggered ribs on process chamber to reduce thermal effects |
US20060093756A1 (en) * | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
US8092606B2 (en) | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
JP2015072937A (ja) * | 2013-10-01 | 2015-04-16 | 株式会社東芝 | 半導体製造装置、半導体製造方法及びプロセスチューブ |
US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
US11680338B2 (en) | 2019-12-19 | 2023-06-20 | Applied Materials, Inc. | Linear lamp array for improved thermal uniformity and profile control |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB219077A (en) * | 1923-04-16 | 1924-07-16 | Charles Ashmore Baker | Improvements in electrically heated ovens |
GB611141A (en) * | 1946-04-23 | 1948-10-26 | Townson & Mercer Ltd | Improvements in or relating to electrically boost-heated ovens |
GB770955A (en) * | 1954-04-09 | 1957-03-27 | Ohio Commw Eng Co | Improvements in the surface coating and impregnation of metal surfaces |
GB1291357A (en) * | 1970-11-03 | 1972-10-04 | Applied Materials Tech | Improvements in or relating to radiation heated reactors |
FR2126127B1 (nl) * | 1971-02-26 | 1973-05-11 | Cadillac France | |
US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4101759A (en) * | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
JPS56124437A (en) * | 1980-03-07 | 1981-09-30 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas phase chemical reaction apparatus |
JPS59928A (ja) * | 1982-06-25 | 1984-01-06 | Ushio Inc | 光加熱装置 |
JPS5959876A (ja) * | 1982-09-30 | 1984-04-05 | Ushio Inc | 光照射炉の運転方法 |
JPS5977289A (ja) * | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | 光照射炉 |
US4511788A (en) * | 1983-02-09 | 1985-04-16 | Ushio Denki Kabushiki Kaisha | Light-radiant heating furnace |
JPS59139898U (ja) * | 1983-03-10 | 1984-09-18 | ウシオ電機株式会社 | 光照射炉 |
GB2136937A (en) * | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
JPS60116778A (ja) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ,インコーポレイテツド | 化学蒸着方法及び装置 |
FR2594529B1 (fr) * | 1986-02-19 | 1990-01-26 | Bertin & Cie | Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium |
-
1985
- 1985-10-07 US US06/784,739 patent/US4654509A/en not_active Expired - Lifetime
-
1986
- 1986-09-17 NL NL8602358A patent/NL193801C/nl not_active IP Right Cessation
- 1986-10-02 FR FR8614032A patent/FR2606880B3/fr not_active Expired
- 1986-10-06 GB GB8623977A patent/GB2181459B/en not_active Expired - Lifetime
- 1986-10-06 JP JP61237811A patent/JP2545371B2/ja not_active Expired - Lifetime
- 1986-10-07 DE DE3634131A patent/DE3634131C2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3634131A1 (de) | 1987-04-09 |
JPS6293378A (ja) | 1987-04-28 |
DE3634131C2 (de) | 2001-10-04 |
US4654509A (en) | 1987-03-31 |
FR2606880B3 (fr) | 1989-06-16 |
JP2545371B2 (ja) | 1996-10-16 |
FR2606880A1 (fr) | 1988-05-20 |
GB2181459A (en) | 1987-04-23 |
NL193801C (nl) | 2000-11-06 |
GB2181459B (en) | 1990-04-25 |
GB8623977D0 (en) | 1986-11-12 |
NL8602358A (nl) | 1987-05-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC. |
|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: ASM AMERICA, INC. |
|
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20020401 |
|
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20020401 |