FR2606880B3 - Appareil et procede pour le chauffage de substrats dans un reacteur pour le depot epitaxial axialement symetrique de materiaux - Google Patents

Appareil et procede pour le chauffage de substrats dans un reacteur pour le depot epitaxial axialement symetrique de materiaux

Info

Publication number
FR2606880B3
FR2606880B3 FR8614032A FR8614032A FR2606880B3 FR 2606880 B3 FR2606880 B3 FR 2606880B3 FR 8614032 A FR8614032 A FR 8614032A FR 8614032 A FR8614032 A FR 8614032A FR 2606880 B3 FR2606880 B3 FR 2606880B3
Authority
FR
France
Prior art keywords
reactor
materials
epitaxial deposition
axially symmetrical
heating substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8614032A
Other languages
English (en)
Other versions
FR2606880A1 (fr
Inventor
Mcdonald Robinson
Ronald D Behee
Wiebe B De Boer
Wayne L Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epsilon LP
Original Assignee
Epsilon LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon LP filed Critical Epsilon LP
Publication of FR2606880A1 publication Critical patent/FR2606880A1/fr
Application granted granted Critical
Publication of FR2606880B3 publication Critical patent/FR2606880B3/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR8614032A 1985-10-07 1986-10-02 Appareil et procede pour le chauffage de substrats dans un reacteur pour le depot epitaxial axialement symetrique de materiaux Expired FR2606880B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/784,739 US4654509A (en) 1985-10-07 1985-10-07 Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus

Publications (2)

Publication Number Publication Date
FR2606880A1 FR2606880A1 (fr) 1988-05-20
FR2606880B3 true FR2606880B3 (fr) 1989-06-16

Family

ID=25133382

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8614032A Expired FR2606880B3 (fr) 1985-10-07 1986-10-02 Appareil et procede pour le chauffage de substrats dans un reacteur pour le depot epitaxial axialement symetrique de materiaux

Country Status (6)

Country Link
US (1) US4654509A (fr)
JP (1) JP2545371B2 (fr)
DE (1) DE3634131C2 (fr)
FR (1) FR2606880B3 (fr)
GB (1) GB2181459B (fr)
NL (1) NL193801C (fr)

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US4836138A (en) * 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
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US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
DE4306398A1 (de) * 1993-03-02 1994-09-08 Leybold Ag Vorrichtung zum Erwärmen eines Substrates
US5318801A (en) * 1993-05-18 1994-06-07 United States Of America As Represented By The Secretary Of The Navy Substrate temperature control apparatus and technique for CVD reactors
WO1997009737A1 (fr) * 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Dispositif de support pour tranches
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten
JP3166065B2 (ja) * 1996-02-08 2001-05-14 東京エレクトロン株式会社 処理装置及び処理方法
JP3493880B2 (ja) * 1996-02-28 2004-02-03 信越半導体株式会社 輻射加熱装置および加熱方法
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US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6316747B1 (en) * 1998-03-02 2001-11-13 Steag Rtp Systems Gmbh Apparatus for the thermal treatment of substrates
WO1999049101A1 (fr) 1998-03-23 1999-09-30 Mattson Technology, Inc. Appareil et procede de depot chimique en phase vapeur et de traitement thermique de substrats a semiconducteurs
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6127658A (en) * 1998-08-04 2000-10-03 Steag C.V.D. Systems, Ltd. Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
DE19923400A1 (de) 1999-05-21 2000-11-30 Steag Rtp Systems Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
US6666924B1 (en) * 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6476362B1 (en) 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
DE10051125A1 (de) 2000-10-16 2002-05-02 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
US7108753B2 (en) * 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20060093756A1 (en) * 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
JP2015072937A (ja) * 2013-10-01 2015-04-16 株式会社東芝 半導体製造装置、半導体製造方法及びプロセスチューブ
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
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JPS5977289A (ja) * 1982-10-26 1984-05-02 ウシオ電機株式会社 光照射炉
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FR2594529B1 (fr) * 1986-02-19 1990-01-26 Bertin & Cie Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium

Also Published As

Publication number Publication date
GB2181459A (en) 1987-04-23
NL8602358A (nl) 1987-05-04
JPS6293378A (ja) 1987-04-28
GB2181459B (en) 1990-04-25
JP2545371B2 (ja) 1996-10-16
NL193801C (nl) 2000-11-06
NL193801B (nl) 2000-07-03
DE3634131A1 (de) 1987-04-09
US4654509A (en) 1987-03-31
GB8623977D0 (en) 1986-11-12
DE3634131C2 (de) 2001-10-04
FR2606880A1 (fr) 1988-05-20

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