NL194710B - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Info

Publication number
NL194710B
NL194710B NL9201095A NL9201095A NL194710B NL 194710 B NL194710 B NL 194710B NL 9201095 A NL9201095 A NL 9201095A NL 9201095 A NL9201095 A NL 9201095A NL 194710 B NL194710 B NL 194710B
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NL9201095A
Other languages
English (en)
Other versions
NL9201095A (nl
NL194710C (nl
Inventor
Sang-In Lee
Chang-Soo Park
Jeong-Ha Son
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL9201095A publication Critical patent/NL9201095A/nl
Publication of NL194710B publication Critical patent/NL194710B/nl
Application granted granted Critical
Publication of NL194710C publication Critical patent/NL194710C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
NL9201095A 1991-06-27 1992-06-19 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL194710C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR910010766 1991-06-27
KR910010766 1991-06-27

Publications (3)

Publication Number Publication Date
NL9201095A NL9201095A (nl) 1993-01-18
NL194710B true NL194710B (nl) 2002-08-01
NL194710C NL194710C (nl) 2002-12-03

Family

ID=19316392

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9201095A NL194710C (nl) 1991-06-27 1992-06-19 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (3)

Country Link
KR (1) KR950010042B1 (nl)
CN (1) CN1032285C (nl)
NL (1) NL194710C (nl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW402778B (en) * 1996-07-12 2000-08-21 Applied Materials Inc Aluminum hole filling using ionized metal adhesion layer
KR100244432B1 (ko) * 1996-11-19 2000-03-02 김영환 반도체 소자의 알루미늄막 형성방법
KR100414746B1 (ko) * 1996-12-31 2004-03-31 주식회사 하이닉스반도체 반도체소자의금속배선형성방법
KR100649972B1 (ko) * 2005-06-10 2006-11-27 주식회사 하이닉스반도체 반도체소자의 금속배선 제조 방법
CN101694835A (zh) * 2009-10-13 2010-04-14 上海宏力半导体制造有限公司 金属层的制造方法
CN104409325B (zh) * 2014-11-17 2017-05-10 福建福顺微电子有限公司 一种改善集成电路厚铝蒸发镀膜工艺铝条缺口的方法
KR102034394B1 (ko) * 2018-09-17 2019-10-18 주식회사 코윈디에스티 레이저 화학기상증착을 이용한 미세 배선 형성 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293740A (ja) * 1986-06-13 1987-12-21 Fujitsu Ltd 半導体装置の製造方法
JPH0727879B2 (ja) * 1989-03-14 1995-03-29 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
KR930001311A (ko) 1993-01-16
CN1068681A (zh) 1993-02-03
NL9201095A (nl) 1993-01-18
KR950010042B1 (ko) 1995-09-06
CN1032285C (zh) 1996-07-10
NL194710C (nl) 2002-12-03

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Lapsed because of reaching the maximum lifetime of a patent

Effective date: 20120619