NL1006758A1 - Werkwijze voor fabricage van een halfgeleiderinrichting. - Google Patents
Werkwijze voor fabricage van een halfgeleiderinrichting.Info
- Publication number
- NL1006758A1 NL1006758A1 NL1006758A NL1006758A NL1006758A1 NL 1006758 A1 NL1006758 A1 NL 1006758A1 NL 1006758 A NL1006758 A NL 1006758A NL 1006758 A NL1006758 A NL 1006758A NL 1006758 A1 NL1006758 A1 NL 1006758A1
- Authority
- NL
- Netherlands
- Prior art keywords
- fabrication
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21443796 | 1996-08-14 | ||
| JP21443796 | 1996-08-14 | ||
| JP426697 | 1997-01-14 | ||
| JP00426697A JP3695029B2 (ja) | 1996-08-14 | 1997-01-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1006758A1 true NL1006758A1 (nl) | 1998-02-20 |
| NL1006758C2 NL1006758C2 (nl) | 2000-10-10 |
Family
ID=26338012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1006758A NL1006758C2 (nl) | 1996-08-14 | 1997-08-11 | Werkwijze voor fabricage van een halfgeleiderinrichting. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5858850A (nl) |
| JP (1) | JP3695029B2 (nl) |
| KR (1) | KR19980018636A (nl) |
| NL (1) | NL1006758C2 (nl) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60037558T2 (de) * | 1999-03-10 | 2009-01-08 | Nxp B.V. | Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator |
| FR2792775B1 (fr) * | 1999-04-20 | 2001-11-23 | France Telecom | Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite |
| TW557569B (en) * | 2000-01-24 | 2003-10-11 | Sony Corp | Semiconductor device and manufacturing method thereof |
| JP2001217317A (ja) * | 2000-02-07 | 2001-08-10 | Sony Corp | 半導体装置およびその製造方法 |
| JP2003031674A (ja) * | 2001-07-12 | 2003-01-31 | Sony Corp | 半導体装置及びその製造方法 |
| GB0126895D0 (en) * | 2001-11-08 | 2002-01-02 | Denselight Semiconductors Pte | Fabrication of a heterojunction bipolar transistor with intergrated mim capaci or |
| US7521733B2 (en) * | 2002-05-14 | 2009-04-21 | Infineon Technologies Ag | Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor |
| JP2010245318A (ja) * | 2009-04-07 | 2010-10-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| EP2663379B1 (en) | 2011-01-11 | 2017-12-27 | Amazon Filters Spólka z Ograniczona Odpowiedzialnoscia | Method for manufacturing of pleated filters |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0330431A (ja) * | 1989-06-28 | 1991-02-08 | Fujitsu Ltd | バイポーラ半導体装置およびその製造方法 |
| JP2940306B2 (ja) * | 1992-06-24 | 1999-08-25 | 松下電器産業株式会社 | ヘテロ接合バイポーラトランジスタ集積回路装置およびその製造方法 |
| JP2762851B2 (ja) * | 1992-07-27 | 1998-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5407841A (en) * | 1992-10-30 | 1995-04-18 | Hughes Aircraft Company | CBiCMOS fabrication method using sacrificial gate poly |
| KR940018967A (ko) * | 1993-01-30 | 1994-08-19 | 오가 노리오 | 반도체장치 및 그 제조방법 |
| JPH08172139A (ja) * | 1994-12-19 | 1996-07-02 | Sony Corp | 半導体装置製造方法 |
| FR2757683B1 (fr) * | 1996-12-20 | 1999-03-05 | Sgs Thomson Microelectronics | Transistor bipolaire et capacite |
-
1997
- 1997-01-14 JP JP00426697A patent/JP3695029B2/ja not_active Expired - Fee Related
- 1997-08-11 NL NL1006758A patent/NL1006758C2/nl not_active IP Right Cessation
- 1997-08-12 US US08/909,813 patent/US5858850A/en not_active Expired - Fee Related
- 1997-08-13 KR KR1019970038520A patent/KR19980018636A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10112507A (ja) | 1998-04-28 |
| JP3695029B2 (ja) | 2005-09-14 |
| NL1006758C2 (nl) | 2000-10-10 |
| KR19980018636A (ko) | 1998-06-05 |
| US5858850A (en) | 1999-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20000808 |
|
| PD2B | A search report has been drawn up | ||
| VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20030301 |