JP2010245318A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 40
- 230000006866 deterioration Effects 0.000 abstract description 4
- 150000003376 silicon Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 201
- 230000015572 biosynthetic process Effects 0.000 description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
【解決手段】本発明の半導体装置では、容量素子1の下部電極8上面に誘電体膜としてのシリコン窒化膜12が形成され、シリコン窒化膜12上面に上部電極15が形成される。上部電極15は、シリコン窒化膜12を保護する多結晶シリコン膜13とシリコン膜14の積層構造から成る。この構造により、フォトレジストの剥離の際等にシリコン窒化膜12の一部が除去され、容量素子1の容量値がばらつきや耐圧劣化が防止される。
【選択図】図1
Description
8 下部電極
12 シリコン窒化膜
13 多結晶シリコン膜
14 シリコン膜
15 上部電極
Claims (8)
- 半導体層と、
前記半導体層上に形成された容量素子の下部電極と、
前記下部電極を被覆するように形成された絶縁層と、
前記絶縁層に形成された開口領域と、
前記開口領域から露出する前記下部電極と当接するように前記下部電極上に形成された誘電体膜と、
少なくとも前記開口領域上に配置され、前記容量素子の上部電極となる第1のシリコン膜と、
前記第1のシリコン膜を被覆し、前記誘電体膜上に形成された前記上部電極となる第2のシリコン膜とを有することを特徴とする半導体装置。 - 前記第1のシリコン膜は、前記第2のシリコン膜よりも薄い膜であり、前記第1のシリコン膜は、フォトレジストを剥離するための薬液が前記誘電体膜に届かない膜厚を有することを特徴とする請求項1に記載の半導体装置。
- 前記第2のシリコン膜は、前記第1のシリコン膜を完全に被覆することを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記誘電体膜はシリコン窒化膜であり、前記シリコン窒化膜の表面には酸化膜が形成されることを特徴とする請求項1または請求項2に記載の半導体装置。
- 半導体層上に容量素子の下部電極を形成し、前記下部電極を被覆するように前記半導体層上に絶縁層を形成した後、前記下部電極が露出するように前記絶縁層に開口領域を形成する工程と、
前記開口領域から露出する前記下部電極を被覆するように前記絶縁層上に誘電体膜を形成し、前記開口領域上を被覆するように前記誘電体膜上に前記容量素子の上部電極となる第1のシリコン膜を形成する工程と、
前記第1のシリコン膜を被覆するように前記誘電体膜上に前記上部電極となる第2のシリコン膜を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記誘電体膜はシリコン窒化膜であり、前記シリコン窒化膜の表面に酸化膜を形成した後、前記誘電体膜上面に第1のシリコン膜を形成することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体層にバイポーラトランジスタを形成し、前記バイポーラトランジスタのエミッタ取り出し電極と前記上部電極の第2のシリコン膜とを共用工程にて形成する半導体装置の製造方法において、
前記エミッタ取り出し電極を形成するためのコンタクトホールはフォトレジストをマスクとしてエッチングにより形成し、前記フォトレジストは前記第1のシリコン膜を形成した後に前記絶縁層上に形成することを特徴とする請求項5または請求項6に記載の半導体装置の製造方法。 - 前記第2のシリコン膜としてアモルファスシリコン膜を堆積し、前記アモルファスシリコン膜に注入した不純物を前記第1のシリコン膜へと拡散させることを特徴とする請求項5または請求項6に記載の半導体装置の製造方法。
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JP2009092783A JP2010245318A (ja) | 2009-04-07 | 2009-04-07 | 半導体装置及びその製造方法 |
US12/755,663 US8461663B2 (en) | 2009-04-07 | 2010-04-07 | Semiconductor device with silicon capacitor |
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JP2009092783A JP2010245318A (ja) | 2009-04-07 | 2009-04-07 | 半導体装置及びその製造方法 |
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US8685828B2 (en) | 2011-01-14 | 2014-04-01 | Infineon Technologies Ag | Method of forming a capacitor |
US8318575B2 (en) | 2011-02-07 | 2012-11-27 | Infineon Technologies Ag | Compressive polycrystalline silicon film and method of manufacture thereof |
US9011350B2 (en) | 2011-11-30 | 2015-04-21 | Lincoln Diagnostics, Inc. | Allergy testing device and method of testing for allergies |
JP2016162904A (ja) * | 2015-03-03 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04170066A (ja) * | 1990-11-01 | 1992-06-17 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH08213473A (ja) * | 1995-02-07 | 1996-08-20 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
JPH10112507A (ja) * | 1996-08-14 | 1998-04-28 | Sony Corp | 半導体装置の製造方法 |
JPH11135657A (ja) * | 1997-10-31 | 1999-05-21 | Nec Corp | 半導体装置及びその製造方法 |
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JP2840488B2 (ja) | 1991-09-27 | 1998-12-24 | 三洋電機株式会社 | 半導体集積回路とその製造方法 |
JP5129541B2 (ja) * | 2007-10-15 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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- 2009-04-07 JP JP2009092783A patent/JP2010245318A/ja active Pending
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- 2010-04-07 US US12/755,663 patent/US8461663B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04170066A (ja) * | 1990-11-01 | 1992-06-17 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH08213473A (ja) * | 1995-02-07 | 1996-08-20 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
JPH10112507A (ja) * | 1996-08-14 | 1998-04-28 | Sony Corp | 半導体装置の製造方法 |
JPH11135657A (ja) * | 1997-10-31 | 1999-05-21 | Nec Corp | 半導体装置及びその製造方法 |
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US20100252910A1 (en) | 2010-10-07 |
US8461663B2 (en) | 2013-06-11 |
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