JP2009016754A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 92
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 92
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 76
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 76
- 229910021332 silicide Inorganic materials 0.000 claims description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 13
- 230000002265 prevention Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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Abstract
【解決手段】 半導体基板11と、半導体基板上に形成されたゲート絶縁膜13と、ゲート絶縁膜上に形成されたゲート電極22と、ゲート電極の側面に形成された第1の絶縁膜17と、第1の絶縁膜の表面を覆い、第1の絶縁膜とは異なった材料で形成された第2の絶縁膜28と、半導体基板、ゲート電極及び第2の絶縁膜を覆い、第2の絶縁膜とは異なった材料で形成された第3の絶縁膜23とを備える。
【選択図】 図11
Description
13…ゲート絶縁膜 14…ポリシリコン膜
15…シリコン窒化膜 16…エクステンション拡散層
17…シリコン窒化膜(側壁絶縁膜) 18…ソース/ドレイン拡散層
19…シリサイド膜 20…シリコン窒化膜
21…シリコン酸化膜 22…シリサイド膜(ゲート電極)
23…シリコン窒化膜 24…シリコン酸化膜
25…フォトレジストパターン 26…予備的なホール
27…コンタクトホール 28…シリコン酸化膜
Claims (5)
- 半導体基板と、
前記半導体基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極の側面に形成された第1の絶縁膜と、
前記第1の絶縁膜の表面を覆い、前記第1の絶縁膜とは異なった材料で形成された第2の絶縁膜と、
前記半導体基板、前記ゲート電極及び前記第2の絶縁膜を覆い、前記第2の絶縁膜とは異なった材料で形成された第3の絶縁膜と、
を備えたことを特徴とする半導体装置。 - 前記第1の絶縁膜はシリコン窒化膜で形成され、前記第2の絶縁膜はシリコン酸化膜で形成され、前記第3の絶縁膜はシリコン窒化膜で形成されている
ことを特徴とする請求項1に記載の半導体装置。 - 前記半導体基板と前記第2の絶縁膜との間及び前記半導体基板と前記第3の絶縁膜との間に形成されたシリサイド膜をさらに備えた
ことを特徴とする請求項1に記載の半導体装置。 - 半導体基板上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極と、前記ゲート電極の側面に形成された第1の絶縁膜と、前記第1の絶縁膜の表面を覆い、前記第1の絶縁膜とは異なった材料で形成された第2の絶縁膜と、を備えた構造を形成する工程と、
前記半導体基板、前記ゲート電極及び前記第2の絶縁膜を覆い、前記第2の絶縁膜とは異なった材料で形成された第3の絶縁膜を形成する工程と、
前記第3の絶縁膜を覆い、前記第3の絶縁膜とは異なった材料で形成された第4の絶縁膜を形成する工程と、
前記第3の絶縁膜及び前記第4の絶縁膜にコンタクトホールを形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - シリコン基板上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたシリコン膜と、前記シリコン膜の上面に形成された第1のシリコン窒化膜と、前記シリコン膜の側面に形成された第2のシリコン窒化膜と、を備えた構造を形成する工程と、
前記構造で覆われていない前記シリコン基板の表面領域を第1のシリサイド膜に変換する工程と、
前記第1のシリサイド膜上に第1のシリコン酸化膜を形成する工程と、
前記第1のシリコン酸化膜を形成した後、前記第1のシリコン窒化膜を除去して前記シリコン膜を露出させる工程と、
前記露出したシリコン膜を第2のシリサイド膜に変換してゲート電極を形成する工程と、
前記ゲート電極を形成した後、前記第1のシリコン酸化膜を除去する工程と、
前記第1のシリコン酸化膜を除去した後、前記第2のシリコン窒化膜の表面を覆う第2のシリコン酸化膜を形成する工程と、
前記第1のシリサイド膜、前記ゲート電極及び前記第2のシリコン酸化膜を覆う第3のシリコン窒化膜を形成する工程と、
前記第3のシリコン窒化膜を覆う第3のシリコン酸化膜を形成する工程と、
前記第3のシリコン酸化膜に前記第3のシリコン窒化膜に達する予備的なホールを形成する工程と、
前記第3のシリコン窒化膜の前記予備的なホールの下に位置する部分を除去して、前記第3のシリコン酸化膜及び前記第3のシリコン窒化膜にコンタクトホールを形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。
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JP2007180017A JP2009016754A (ja) | 2007-07-09 | 2007-07-09 | 半導体装置及びその製造方法 |
US12/169,166 US20090014818A1 (en) | 2007-07-09 | 2008-07-08 | Semiconductor device and manufacturing method thereof |
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JP2007180017A JP2009016754A (ja) | 2007-07-09 | 2007-07-09 | 半導体装置及びその製造方法 |
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US7791149B2 (en) * | 2008-07-10 | 2010-09-07 | Qimonda Ag | Integrated circuit including a dielectric layer |
US8935104B2 (en) * | 2010-03-10 | 2015-01-13 | 3M Innovative Properties Company | Application-specific repeat defect detection in web manufacturing processes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09289249A (ja) * | 1996-04-22 | 1997-11-04 | Sony Corp | 半導体装置の製造方法 |
JP2003273240A (ja) * | 2002-03-19 | 2003-09-26 | Hitachi Ltd | 半導体装置及びその製造方法 |
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JP4417439B2 (ja) * | 1994-06-29 | 2010-02-17 | フリースケール セミコンダクター インコーポレイテッド | エッチング・ストップ層を利用する半導体装置構造とその方法 |
US5817562A (en) * | 1997-01-24 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for making improved polysilicon FET gate electrode structures and sidewall spacers for more reliable self-aligned contacts (SAC) |
US7429517B2 (en) * | 2004-05-13 | 2008-09-30 | Texas Instruments Incorporated | CMOS transistor using high stress liner layer |
US7009226B1 (en) * | 2004-07-12 | 2006-03-07 | Advanced Micro Devices, Inc. | In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity |
JP2007305819A (ja) * | 2006-05-12 | 2007-11-22 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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- 2007-07-09 JP JP2007180017A patent/JP2009016754A/ja active Pending
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09289249A (ja) * | 1996-04-22 | 1997-11-04 | Sony Corp | 半導体装置の製造方法 |
JP2003273240A (ja) * | 2002-03-19 | 2003-09-26 | Hitachi Ltd | 半導体装置及びその製造方法 |
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