NL1007253A1 - Belichtingsapparaat en inrichtingsvervaardigingswerkwijze die daarvan gebruik maakt. - Google Patents

Belichtingsapparaat en inrichtingsvervaardigingswerkwijze die daarvan gebruik maakt.

Info

Publication number
NL1007253A1
NL1007253A1 NL1007253A NL1007253A NL1007253A1 NL 1007253 A1 NL1007253 A1 NL 1007253A1 NL 1007253 A NL1007253 A NL 1007253A NL 1007253 A NL1007253 A NL 1007253A NL 1007253 A1 NL1007253 A1 NL 1007253A1
Authority
NL
Netherlands
Prior art keywords
exposure apparatus
device manufacturing
manufacturing
exposure
Prior art date
Application number
NL1007253A
Other languages
English (en)
Other versions
NL1007253C2 (nl
Inventor
Kazuhiro Takahashi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of NL1007253A1 publication Critical patent/NL1007253A1/nl
Application granted granted Critical
Publication of NL1007253C2 publication Critical patent/NL1007253C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1007253A 1996-10-11 1997-10-10 Belichtingsapparaat en inrichtingsvervaardigingswerkwijze die daarvan gebruik maakt. NL1007253C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8269973A JPH10116766A (ja) 1996-10-11 1996-10-11 露光装置及びデバイス製造方法
JP26997396 1996-10-11

Publications (2)

Publication Number Publication Date
NL1007253A1 true NL1007253A1 (nl) 1998-04-15
NL1007253C2 NL1007253C2 (nl) 1998-06-15

Family

ID=17479812

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1007253A NL1007253C2 (nl) 1996-10-11 1997-10-10 Belichtingsapparaat en inrichtingsvervaardigingswerkwijze die daarvan gebruik maakt.

Country Status (4)

Country Link
US (2) US6163365A (nl)
JP (1) JPH10116766A (nl)
KR (1) KR100277112B1 (nl)
NL (1) NL1007253C2 (nl)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW398029B (en) 1997-04-18 2000-07-11 Nikon Corp Exposure device, method of manufacturing the same and the electric circuit
KR100564436B1 (ko) 1997-07-22 2006-03-29 가부시키가이샤 니콘 노광 방법, 노광 장치 및 광 세정 방법
DE69837483T2 (de) 1997-07-25 2007-12-20 Nikon Corp. Belichtungsverfahren und Belichtungsapparat
US6563565B2 (en) 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
WO1999027568A1 (fr) 1997-11-21 1999-06-03 Nikon Corporation Graveur de motifs a projection et procede de sensibilisation a projection
WO1999052130A1 (fr) * 1998-04-07 1999-10-14 Nikon Corporation Procede d'exposition, appareil d'exposition, son procede de production, dispositif et son procede de fabrication
EP1014197B1 (en) * 1998-12-16 2006-11-08 ASML Netherlands B.V. Lithographic projection apparatus
JP3710321B2 (ja) * 1999-04-01 2005-10-26 キヤノン株式会社 露光量制御方法、露光装置およびデバイス製造方法
JP2001110710A (ja) 1999-10-08 2001-04-20 Nikon Corp 露光装置、露光方法、および半導体デバイスの製造方法
JP2001196293A (ja) 2000-01-14 2001-07-19 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
KR20030097781A (ko) * 2000-09-19 2003-12-31 가부시키가이샤 니콘 노광장치, 노광방법, 및 디바이스 제조방법
JP4366098B2 (ja) * 2003-03-04 2009-11-18 キヤノン株式会社 投影露光装置および方法ならびにデバイス製造方法
US7068349B2 (en) * 2003-04-24 2006-06-27 Asml Netherlands B.V. Method of and preventing focal plane anomalies in the focal plane of a projection system
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
JP2009218366A (ja) * 2008-03-10 2009-09-24 Canon Inc 露光装置、露光方法、算出方法及びデバイス製造方法
JP5094517B2 (ja) * 2008-04-11 2012-12-12 キヤノン株式会社 露光装置、測定方法、安定化方法及びデバイスの製造方法
JP2010129796A (ja) * 2008-11-28 2010-06-10 Canon Inc 露光装置及びデバイス製造方法
WO2020163742A1 (en) 2019-02-08 2020-08-13 Photon-X, Inc. Integrated spatial phase imaging

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999722A (ja) * 1982-11-29 1984-06-08 Canon Inc 半導体焼付露光制御方法
JPH0652708B2 (ja) * 1984-11-01 1994-07-06 株式会社ニコン 投影光学装置
JPH0442521A (ja) * 1990-06-08 1992-02-13 Seiko Epson Corp 投影露光装置
JP3102076B2 (ja) * 1991-08-09 2000-10-23 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
JPH05251310A (ja) * 1992-03-06 1993-09-28 Nikon Corp 露光制御装置
US5430303A (en) * 1992-07-01 1995-07-04 Nikon Corporation Exposure apparatus
JP2856608B2 (ja) * 1992-08-28 1999-02-10 山形日本電気株式会社 半導体露光装置
JP2765422B2 (ja) * 1992-12-28 1998-06-18 キヤノン株式会社 露光装置及びそれを用いた半導体素子の製造方法
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
JP2862477B2 (ja) * 1993-06-29 1999-03-03 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
JP3346843B2 (ja) * 1993-06-30 2002-11-18 株式会社東芝 液晶表示装置
JP3093528B2 (ja) * 1993-07-15 2000-10-03 キヤノン株式会社 走査型露光装置
US5696623A (en) * 1993-08-05 1997-12-09 Fujitsu Limited UV exposure with elongated service lifetime
FR2708757B1 (fr) * 1993-08-05 1997-05-09 Fujitsu Ltd Procédé et appareil d'exposition par de la lumière ultraviolette.
BE1007851A3 (nl) * 1993-12-03 1995-11-07 Asml Lithography B V Belichtingseenheid met een voorziening tegen vervuiling van optische componenten en een fotolithografisch apparaat voorzien van een dergelijke belichtingseenheid.
BE1007907A3 (nl) * 1993-12-24 1995-11-14 Asm Lithography Bv Lenzenstelsel met in gasgevulde houder aangebrachte lenselementen en fotolithografisch apparaat voorzien van een dergelijk stelsel.
JP2591481B2 (ja) * 1994-05-12 1997-03-19 日本電気株式会社 半導体装置の露光方法
JP3186011B2 (ja) * 1994-06-24 2001-07-11 キヤノン株式会社 投影露光装置及びデバイス製造方法
JPH0817719A (ja) * 1994-06-30 1996-01-19 Nikon Corp 投影露光装置
JP3630746B2 (ja) * 1994-12-05 2005-03-23 キヤノン株式会社 画像観察装置
JPH08250402A (ja) * 1995-03-15 1996-09-27 Nikon Corp 走査型露光方法及び装置
US5883701A (en) * 1995-09-21 1999-03-16 Canon Kabushiki Kaisha Scanning projection exposure method and apparatus
JP3617558B2 (ja) * 1995-11-17 2005-02-09 株式会社ニコン 露光量制御方法、露光装置、及び素子製造方法
JP3459742B2 (ja) * 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法

Also Published As

Publication number Publication date
US6621558B1 (en) 2003-09-16
KR100277112B1 (ko) 2001-01-15
US6163365A (en) 2000-12-19
KR19980032735A (ko) 1998-07-25
NL1007253C2 (nl) 1998-06-15
JPH10116766A (ja) 1998-05-06

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Legal Events

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AD1B A search report has been drawn up
PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20161101