DE69730903D1 - Belichtungsverfahren und -apparat - Google Patents

Belichtungsverfahren und -apparat

Info

Publication number
DE69730903D1
DE69730903D1 DE69730903T DE69730903T DE69730903D1 DE 69730903 D1 DE69730903 D1 DE 69730903D1 DE 69730903 T DE69730903 T DE 69730903T DE 69730903 T DE69730903 T DE 69730903T DE 69730903 D1 DE69730903 D1 DE 69730903D1
Authority
DE
Germany
Prior art keywords
exposure process
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69730903T
Other languages
English (en)
Other versions
DE69730903T2 (de
Inventor
Kenji Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8141318A external-priority patent/JPH09326343A/ja
Priority claimed from JP8141319A external-priority patent/JPH09326344A/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE69730903D1 publication Critical patent/DE69730903D1/de
Application granted granted Critical
Publication of DE69730903T2 publication Critical patent/DE69730903T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
DE69730903T 1996-06-04 1997-06-04 Belichtungsverfahren und -apparat Expired - Fee Related DE69730903T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14131996 1996-06-04
JP14131896 1996-06-04
JP8141318A JPH09326343A (ja) 1996-06-04 1996-06-04 露光方法及び装置
JP8141319A JPH09326344A (ja) 1996-06-04 1996-06-04 露光方法

Publications (2)

Publication Number Publication Date
DE69730903D1 true DE69730903D1 (de) 2004-11-04
DE69730903T2 DE69730903T2 (de) 2005-12-08

Family

ID=26473572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730903T Expired - Fee Related DE69730903T2 (de) 1996-06-04 1997-06-04 Belichtungsverfahren und -apparat

Country Status (4)

Country Link
US (3) US5994006A (de)
EP (1) EP0811881B1 (de)
KR (1) KR980005334A (de)
DE (1) DE69730903T2 (de)

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US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
KR19990030953A (ko) * 1997-10-07 1999-05-06 윤종용 웨이퍼 노광방법
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US6700645B1 (en) * 1998-01-22 2004-03-02 Nikon Corporation Projection optical system and exposure apparatus and method
JP3101613B2 (ja) * 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
EP1090329A4 (de) * 1998-04-30 2002-09-25 Nikon Corp Ausrichtungssimulation
JP3817365B2 (ja) 1998-04-30 2006-09-06 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
US6930754B1 (en) 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
US6563567B1 (en) 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
US6200709B1 (en) * 1999-01-15 2001-03-13 Custom One Design, Inc. Photolithographic mask and apparatus and method of use thereof
KR20010006578A (ko) 1999-01-20 2001-01-26 에이에스엠 리소그라피 비.브이. 광학 보정 플레이트, 및 전사 투영 장치에의 적용
TW587199B (en) * 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
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DE10046218B4 (de) * 2000-09-19 2007-02-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
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JP3962669B2 (ja) * 2002-10-08 2007-08-22 キヤノン株式会社 移動装置及び露光装置並びにデバイスの製造方法
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
DE10322393A1 (de) * 2003-05-12 2004-12-02 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
US7511886B2 (en) * 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
DE10321598A1 (de) * 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Beleuchtungssystem mit Axikon-Modul
JP2005012169A (ja) * 2003-05-22 2005-01-13 Canon Inc 露光装置及びデバイス製造方法
DE10345783A1 (de) * 2003-10-01 2005-04-21 Zeiss Carl Sms Gmbh Optisches Abbildungssystem
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DE102004017082A1 (de) * 2004-04-07 2005-11-10 Carl Zeiss Smt Ag Optische Abbildungsvorrichtung
US7116400B2 (en) * 2004-06-02 2006-10-03 Asml Netherlands B.V. Illumination assembly, method for providing a radiation beam, lithographic projection apparatus and device manufacturing method
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
JP2008533728A (ja) 2005-03-15 2008-08-21 カール・ツァイス・エスエムティー・アーゲー 投影露光方法及びそのための投影露光システム
US20120258407A1 (en) * 2005-04-12 2012-10-11 Sirat Gabriel Y Multifield incoherent Lithography, Nomarski Lithography and multifield incoherent Imaging
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USRE46092E1 (en) 2007-11-20 2016-08-02 Daniel Redlich Revenue sharing system that incentivizes content providers and registered users and includes payment processing
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WO2010123626A1 (en) 2009-04-24 2010-10-28 University Of Southern California Cd133 polymorphisms and expression predict clinical outcome in patients with cancer
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KR101633744B1 (ko) * 2011-08-18 2016-06-27 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
KR101414830B1 (ko) 2011-11-30 2014-07-03 다이닛뽕스크린 세이조오 가부시키가이샤 얼라이먼트 방법, 전사 방법 및 전사장치
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CN107577056B (zh) 2013-03-12 2020-04-03 应用材料公司 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
TWI599427B (zh) 2015-11-27 2017-09-21 財團法人工業技術研究院 加熱產生均勻熔池之裝置
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Also Published As

Publication number Publication date
KR980005334A (ko) 1998-03-30
US5994006A (en) 1999-11-30
EP0811881B1 (de) 2004-09-29
EP0811881A2 (de) 1997-12-10
DE69730903T2 (de) 2005-12-08
US6590637B2 (en) 2003-07-08
US20020109827A1 (en) 2002-08-15
US6396568B1 (en) 2002-05-28
EP0811881A3 (de) 1999-02-24

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