FR2747234B1 - Procede de fabrication d'un transistor en couche mince, et transistor en couche mince - Google Patents

Procede de fabrication d'un transistor en couche mince, et transistor en couche mince

Info

Publication number
FR2747234B1
FR2747234B1 FR9702842A FR9702842A FR2747234B1 FR 2747234 B1 FR2747234 B1 FR 2747234B1 FR 9702842 A FR9702842 A FR 9702842A FR 9702842 A FR9702842 A FR 9702842A FR 2747234 B1 FR2747234 B1 FR 2747234B1
Authority
FR
France
Prior art keywords
thin film
film transistor
manufacturing
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9702842A
Other languages
English (en)
Other versions
FR2747234A1 (fr
Inventor
Ki Hyun Lyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of FR2747234A1 publication Critical patent/FR2747234A1/fr
Application granted granted Critical
Publication of FR2747234B1 publication Critical patent/FR2747234B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
FR9702842A 1996-04-09 1997-03-11 Procede de fabrication d'un transistor en couche mince, et transistor en couche mince Expired - Fee Related FR2747234B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960010638A KR100232677B1 (ko) 1996-04-09 1996-04-09 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조

Publications (2)

Publication Number Publication Date
FR2747234A1 FR2747234A1 (fr) 1997-10-10
FR2747234B1 true FR2747234B1 (fr) 2000-07-21

Family

ID=19455338

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9702842A Expired - Fee Related FR2747234B1 (fr) 1996-04-09 1997-03-11 Procede de fabrication d'un transistor en couche mince, et transistor en couche mince

Country Status (6)

Country Link
US (2) US5814836A (fr)
JP (1) JP4169811B2 (fr)
KR (1) KR100232677B1 (fr)
DE (1) DE19714692C2 (fr)
FR (1) FR2747234B1 (fr)
GB (1) GB2312093B (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225098B1 (ko) * 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
KR100255591B1 (ko) * 1997-03-06 2000-05-01 구본준 박막 트랜지스터 어레이의 배선 연결 구조 및 그 제조 방법
US5990986A (en) * 1997-05-30 1999-11-23 Samsung Electronics Co., Ltd. Thin film transistor substrate for a liquid crystal display having buffer layers and a manufacturing method thereof
KR100333180B1 (ko) * 1998-06-30 2003-06-19 주식회사 현대 디스플레이 테크놀로지 Tft-lcd제조방법
JP4246298B2 (ja) * 1998-09-30 2009-04-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 液晶ディスプレイパネルの製造方法
TW437097B (en) * 1999-12-20 2001-05-28 Hannstar Display Corp Manufacturing method for thin film transistor
KR100660813B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
KR100583979B1 (ko) 2000-02-11 2006-05-26 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
US7071037B2 (en) * 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100731037B1 (ko) * 2001-05-07 2007-06-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR100464205B1 (ko) * 2001-07-10 2005-01-03 엘지.필립스 엘시디 주식회사 박막 트랜지스터 표시소자 및 그 제조방법
KR100980008B1 (ko) * 2002-01-02 2010-09-03 삼성전자주식회사 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법
CN100396945C (zh) * 2002-02-28 2008-06-25 富士通株式会社 动压轴承的制造方法、动压轴承及动压轴承制造装置
KR100683760B1 (ko) * 2005-02-18 2007-02-15 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
TWI269450B (en) * 2005-12-20 2006-12-21 Taiwan Tft Lcd Ass A direct patterned method for manufacturing a metal layer of a semiconductor device
KR100774950B1 (ko) * 2006-01-19 2007-11-09 엘지전자 주식회사 전계발광소자
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US7696096B2 (en) * 2006-10-10 2010-04-13 Palo Alto Research Center Incorporated Self-aligned masks using multi-temperature phase-change materials
KR100822216B1 (ko) * 2007-04-09 2008-04-16 삼성에스디아이 주식회사 박막 트랜지스터 기판, 이를 포함한 유기 발광 표시장치 및유기 발광 표시장치의 제조방법
US20100283059A1 (en) * 2008-04-08 2010-11-11 Makoto Nakazawa Semiconductor device and method for manufacturing same
KR101337195B1 (ko) 2008-10-10 2013-12-05 엘지디스플레이 주식회사 액정표시장치용 어레이기판 및 그의 제조방법, 이를 구비한액정표시장치
TWI511302B (zh) * 2013-08-23 2015-12-01 Ye Xin Technology Consulting Co Ltd 薄膜電晶體及使用該薄膜電晶體的顯示陣列基板的製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3680806D1 (de) * 1985-03-29 1991-09-19 Matsushita Electric Ind Co Ltd Duennschicht-transistorenanordnung und methode zu deren herstellung.
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
JPS62291067A (ja) * 1986-06-10 1987-12-17 Nec Corp 薄膜トランジスタの製造方法
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JPH02109341A (ja) * 1988-10-19 1990-04-23 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
EP0499979A3 (en) * 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5427962A (en) * 1991-11-15 1995-06-27 Casio Computer Co., Ltd. Method of making a thin film transistor
KR950010041B1 (ko) * 1992-03-28 1995-09-06 현대전자산업주식회사 콘택 홀(contact hole) 구조 및 그 제조방법
JPH07506703A (ja) * 1993-03-01 1995-07-20 ゼネラル・エレクトリック・カンパニイ 持ち上げ方法を用いて構成されたセルフアライン薄膜トランジスタ
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length

Also Published As

Publication number Publication date
KR970072480A (ko) 1997-11-07
DE19714692C2 (de) 1999-09-02
US5814836A (en) 1998-09-29
GB2312093B (en) 1998-06-03
US5963797A (en) 1999-10-05
JPH1041521A (ja) 1998-02-13
FR2747234A1 (fr) 1997-10-10
GB2312093A (en) 1997-10-15
GB9706932D0 (en) 1997-05-21
DE19714692A1 (de) 1997-10-30
KR100232677B1 (ko) 1999-12-01
JP4169811B2 (ja) 2008-10-22

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20141128