DE3680806D1 - Duennschicht-transistorenanordnung und methode zu deren herstellung. - Google Patents

Duennschicht-transistorenanordnung und methode zu deren herstellung.

Info

Publication number
DE3680806D1
DE3680806D1 DE8686302414T DE3680806T DE3680806D1 DE 3680806 D1 DE3680806 D1 DE 3680806D1 DE 8686302414 T DE8686302414 T DE 8686302414T DE 3680806 T DE3680806 T DE 3680806T DE 3680806 D1 DE3680806 D1 DE 3680806D1
Authority
DE
Germany
Prior art keywords
production
thick layer
transistor arrangement
layer transistor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686302414T
Other languages
English (en)
Inventor
Mamoru Takeda
Ichiro Yamashita
Isamu Kitahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60063413A external-priority patent/JPH0612780B2/ja
Priority claimed from JP60063414A external-priority patent/JPS61223781A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3680806D1 publication Critical patent/DE3680806D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE8686302414T 1985-03-29 1986-04-01 Duennschicht-transistorenanordnung und methode zu deren herstellung. Expired - Lifetime DE3680806D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60063413A JPH0612780B2 (ja) 1985-03-29 1985-03-29 薄膜トランジスタアレイの製造法
JP60063414A JPS61223781A (ja) 1985-03-29 1985-03-29 絵素電極形成法

Publications (1)

Publication Number Publication Date
DE3680806D1 true DE3680806D1 (de) 1991-09-19

Family

ID=26404535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686302414T Expired - Lifetime DE3680806D1 (de) 1985-03-29 1986-04-01 Duennschicht-transistorenanordnung und methode zu deren herstellung.

Country Status (3)

Country Link
US (2) US4958205A (de)
EP (1) EP0196915B1 (de)
DE (1) DE3680806D1 (de)

Families Citing this family (51)

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US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
EP0211402B1 (de) * 1985-08-02 1991-05-08 General Electric Company Verfahren und Struktur für dünnfilmtransistorgesteuerte Flüssigkristallmatrixanordnungen
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
US5686326A (en) * 1985-08-05 1997-11-11 Canon Kabushiki Kaisha Method of making thin film transistor
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
FR2605443B1 (fr) * 1986-10-17 1992-09-18 Thomson Csf Ecran de visualisation electrooptique a transistor de commande et procede de realisation
JPH0690372B2 (ja) * 1987-08-26 1994-11-14 シャープ株式会社 液晶表示素子
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5148248A (en) * 1987-10-06 1992-09-15 General Electric Company Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays
US5210045A (en) * 1987-10-06 1993-05-11 General Electric Company Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays
JPH01102434A (ja) * 1987-10-15 1989-04-20 Sharp Corp マトリックス型液晶表示パネル
KR910009039B1 (ko) * 1987-12-18 1991-10-28 가부시끼가이샤 세이꼬오샤 비정질 실리콘 박막 트랜지스터의 제조방법
JPH01173650A (ja) * 1987-12-26 1989-07-10 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0242761A (ja) * 1988-04-20 1990-02-13 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法
US5051800A (en) * 1988-04-30 1991-09-24 Hajime Shoji Thin film semiconductor device and liquid crystal display apparatus using thereof
US5187551A (en) * 1988-04-30 1993-02-16 Sharp Kabushiki Kaisha Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers
GB2223353A (en) * 1988-09-30 1990-04-04 Philips Electronic Associated Thin-film transistor
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
JPH053320A (ja) * 1990-08-10 1993-01-08 Fuji Xerox Co Ltd 薄膜半導体装置
KR940008227B1 (ko) * 1991-08-27 1994-09-08 주식회사 금성사 박막 트랜지스터 제조방법
JP3200639B2 (ja) * 1992-05-19 2001-08-20 カシオ計算機株式会社 薄膜トランジスタパネルの製造方法
JP3537854B2 (ja) * 1992-12-29 2004-06-14 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタの製造方法
US5441905A (en) * 1993-04-29 1995-08-15 Industrial Technology Research Institute Process of making self-aligned amorphous-silicon thin film transistors
US5384271A (en) * 1993-10-04 1995-01-24 General Electric Company Method for reduction of off-current in thin film transistors
JP2905680B2 (ja) * 1993-12-20 1999-06-14 シャープ株式会社 薄膜トランジスターの製造方法
KR100380546B1 (ko) * 1994-02-24 2003-06-25 가부시끼가이샤 히다치 세이사꾸쇼 반도체집적회로장치의제조방법
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
KR0135391B1 (ko) * 1994-05-28 1998-04-22 김광호 자기정렬된 액정표시장치용 박막트랜지스터 및 제조방법
US5990492A (en) * 1995-05-30 1999-11-23 Samsung Electronics Co., Ltd. Self-aligned thin-film transistor for a liquid crystal display having source and drain electrodes of different material
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
KR100225098B1 (ko) * 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
US5650358A (en) * 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
US6219114B1 (en) * 1995-12-01 2001-04-17 Lg Electronics Inc. Liquid crystal display device with reduced source/drain parasitic capacitance and method of fabricating same
US5597747A (en) * 1995-12-15 1997-01-28 Industrial Technology Research Institute Method of making inverted thin film transistor using backsick exposure and negative photoresist
KR100193348B1 (ko) * 1996-02-12 1999-07-01 구자홍 액정표시장치의 박막트랜지스터 제조방법
KR100232677B1 (ko) * 1996-04-09 1999-12-01 구본준 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조
CN101983343B (zh) * 2008-03-31 2013-06-12 日本电石工业株式会社 多方向性立方角回归反射物体
US8703365B2 (en) 2012-03-06 2014-04-22 Apple Inc. UV mask with anti-reflection coating and UV absorption material
US8704232B2 (en) 2012-06-12 2014-04-22 Apple Inc. Thin film transistor with increased doping regions
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
US8823003B2 (en) * 2012-08-10 2014-09-02 Apple Inc. Gate insulator loss free etch-stop oxide thin film transistor
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8748320B2 (en) 2012-09-27 2014-06-10 Apple Inc. Connection to first metal layer in thin film transistor process
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
US9601557B2 (en) 2012-11-16 2017-03-21 Apple Inc. Flexible display
US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
US9600112B2 (en) 2014-10-10 2017-03-21 Apple Inc. Signal trace patterns for flexible substrates
EP3340328B1 (de) 2016-12-26 2022-02-02 LG Display Co., Ltd. Flexible anzeigevorrichtung

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DE2953769C2 (de) * 1978-02-08 1985-02-14 Sharp K.K., Osaka Flüssigkristall-Anzeigematrix mit Dünnfilmtransistor-Anordnung
JPS5688354A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor integrated circuit device
JPS5790977A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Double-layer gate polysilicon mos transistor
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FR2605442B1 (fr) * 1986-10-17 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
US4862234A (en) * 1986-11-29 1989-08-29 Sharp Kabushiki Kaisha Thin-film transistor
JP2596949B2 (ja) * 1987-11-06 1997-04-02 シャープ株式会社 液晶表示装置の製造方法

Also Published As

Publication number Publication date
US5137841A (en) 1992-08-11
EP0196915A3 (en) 1987-12-02
EP0196915B1 (de) 1991-08-14
US4958205A (en) 1990-09-18
EP0196915A2 (de) 1986-10-08

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee