DE3586822D1 - Halbleiteranordnung und verfahren zu deren herstellung. - Google Patents

Halbleiteranordnung und verfahren zu deren herstellung.

Info

Publication number
DE3586822D1
DE3586822D1 DE8585115571T DE3586822T DE3586822D1 DE 3586822 D1 DE3586822 D1 DE 3586822D1 DE 8585115571 T DE8585115571 T DE 8585115571T DE 3586822 T DE3586822 T DE 3586822T DE 3586822 D1 DE3586822 D1 DE 3586822D1
Authority
DE
Germany
Prior art keywords
production
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585115571T
Other languages
English (en)
Other versions
DE3586822T2 (de
Inventor
Masaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17321278&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3586822(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3586822D1 publication Critical patent/DE3586822D1/de
Application granted granted Critical
Publication of DE3586822T2 publication Critical patent/DE3586822T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8585115571T 1984-12-07 1985-12-06 Halbleiteranordnung und verfahren zu deren herstellung. Expired - Lifetime DE3586822T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59258515A JPS61136274A (ja) 1984-12-07 1984-12-07 半導体装置

Publications (2)

Publication Number Publication Date
DE3586822D1 true DE3586822D1 (de) 1992-12-17
DE3586822T2 DE3586822T2 (de) 1993-04-08

Family

ID=17321278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585115571T Expired - Lifetime DE3586822T2 (de) 1984-12-07 1985-12-06 Halbleiteranordnung und verfahren zu deren herstellung.

Country Status (4)

Country Link
US (2) US4768080A (de)
EP (1) EP0187278B1 (de)
JP (1) JPS61136274A (de)
DE (1) DE3586822T2 (de)

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US5108941A (en) * 1986-12-05 1992-04-28 Texas Instrument Incorporated Method of making metal-to-polysilicon capacitor
EP0280276B1 (de) * 1987-02-27 1993-05-19 Kabushiki Kaisha Toshiba Nichtflüchtige, durch ultraviolette Strahlung löschbare Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung
US5252846A (en) * 1987-03-13 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor memory device with an improved erroneous write characteristic and erasure characteristic
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JPH0640588B2 (ja) * 1987-03-13 1994-05-25 株式会社東芝 半導体記憶装置
KR920005632B1 (ko) * 1987-03-20 1992-07-10 가부시기가이샤 히다찌세이사꾸쇼 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법
JP2633555B2 (ja) * 1987-03-23 1997-07-23 株式会社東芝 半導体装置の製造方法
JP2633571B2 (ja) * 1987-07-30 1997-07-23 株式会社東芝 紫外線消去型不揮発性半導体装置
JP2664685B2 (ja) * 1987-07-31 1997-10-15 株式会社東芝 半導体装置の製造方法
US5168334A (en) * 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US4808259A (en) * 1988-01-25 1989-02-28 Intel Corporation Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe
US5166904A (en) * 1988-02-05 1992-11-24 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5677867A (en) * 1991-06-12 1997-10-14 Hazani; Emanuel Memory with isolatable expandable bit lines
US5304505A (en) * 1989-03-22 1994-04-19 Emanuel Hazani Process for EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5162247A (en) * 1988-02-05 1992-11-10 Emanuel Hazani Process for trench-isolated self-aligned split-gate EEPROM transistor and memory array
US5303185A (en) * 1988-02-05 1994-04-12 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
JPH0687483B2 (ja) * 1988-02-13 1994-11-02 株式会社東芝 半導体装置
US4964143A (en) * 1988-03-02 1990-10-16 Advanced Micro Devices, Inc. EPROM element employing self-aligning process
JPH0752774B2 (ja) * 1988-04-25 1995-06-05 日本電気株式会社 半導体装置
US5079670A (en) * 1988-05-03 1992-01-07 Texas Instruments Incorporated Metal plate capacitor and method for making the same
JP2703638B2 (ja) * 1988-05-17 1998-01-26 ザイカー インコーポレーテッド トンネリング酸化物の製造方法
US5219774A (en) * 1988-05-17 1993-06-15 Xicor, Inc. Deposited tunneling oxide
US5336628A (en) * 1988-10-25 1994-08-09 Commissariat A L'energie Atomique Method for fabricating semiconductor memory device
US5262846A (en) * 1988-11-14 1993-11-16 Texas Instruments Incorporated Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
US5420060A (en) * 1988-11-14 1995-05-30 Texas Instruments Incorporated Method of making contract-free floating-gate memory array with silicided buried bitlines and with single-step defined floating gates
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
JPH07118511B2 (ja) * 1989-01-17 1995-12-18 株式会社東芝 不揮発性半導体記憶装置
US5304829A (en) * 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
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US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US5258645A (en) * 1990-03-09 1993-11-02 Fujitsu Limited Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure
US5266509A (en) * 1990-05-11 1993-11-30 North American Philips Corporation Fabrication method for a floating-gate field-effect transistor structure
DE69117796T2 (de) * 1990-05-11 1996-09-26 Philips Electronics Nv Feldeffekttransistorstruktur mit einem schwebenden Gate und Verfahren zu ihrer Herstellung
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5151375A (en) * 1990-06-13 1992-09-29 Waferscale Integration, Inc. EPROM virtual ground array
EP0463511B1 (de) * 1990-06-28 1999-03-24 National Semiconductor Corporation Verfahren zum Herstellen einer EPROM-Zelle mit geteiltem Gate und mit Polysilizium-Abstandhaltern
US5091327A (en) * 1990-06-28 1992-02-25 National Semiconductor Corporation Fabrication of a high density stacked gate eprom split cell with bit line reach-through and interruption immunity
US5057447A (en) * 1990-07-09 1991-10-15 Texas Instruments Incorporated Silicide/metal floating gate process
US5229631A (en) * 1990-08-15 1993-07-20 Intel Corporation Erase performance improvement via dual floating gate processing
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP2573432B2 (ja) * 1991-02-18 1997-01-22 株式会社東芝 半導体集積回路の製造方法
JPH04354331A (ja) * 1991-05-31 1992-12-08 Sony Corp ドライエッチング方法
US5273926A (en) * 1991-06-27 1993-12-28 Texas Instruments Incorporated Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity
US5225700A (en) * 1991-06-28 1993-07-06 Texas Instruments Incorporated Circuit and method for forming a non-volatile memory cell
US5218568A (en) * 1991-12-17 1993-06-08 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the same
US5327378A (en) * 1992-03-04 1994-07-05 Waferscale Integration, Inc. Easily manufacturable compact EPROM
WO1994029898A1 (en) * 1993-06-11 1994-12-22 National Semiconductor Corporation Method of eliminating poly end cap rounding effect
JP2536413B2 (ja) * 1993-06-28 1996-09-18 日本電気株式会社 半導体集積回路装置の製造方法
JP2848223B2 (ja) * 1993-12-01 1999-01-20 日本電気株式会社 不揮発性半導体記憶装置の消去方法及び製造方法
US5589412A (en) * 1993-12-16 1996-12-31 National Semiconductor Corporation Method of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regions
US5416349A (en) * 1993-12-16 1995-05-16 National Semiconductor Corporation Increased-density flash EPROM that requires less area to form the metal bit line-to-drain contacts
US5488579A (en) * 1994-04-29 1996-01-30 Motorola Inc. Three-dimensionally integrated nonvolatile SRAM cell and process
KR0135047B1 (ko) * 1994-06-30 1998-04-20 문정환 반도체 읽기 전용 기억 장치의 코딩 방법
US5619052A (en) * 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
JP2871530B2 (ja) * 1995-05-10 1999-03-17 日本電気株式会社 半導体装置の製造方法
US5969397A (en) * 1996-11-26 1999-10-19 Texas Instruments Incorporated Low defect density composite dielectric
US5783473A (en) * 1997-01-06 1998-07-21 Mosel Vitelic, Inc. Structure and manufacturing process of a split gate flash memory unit
TW337599B (en) * 1997-03-27 1998-08-01 Powerchip Semiconductor Corp Process for forming contactless window array of high density nonvolatile memory
US6424011B1 (en) 1997-04-14 2002-07-23 International Business Machines Corporation Mixed memory integration with NVRAM, dram and sram cell structures on same substrate
US5880991A (en) * 1997-04-14 1999-03-09 International Business Machines Corporation Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
EP0893831A1 (de) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. Hochspannungskondensator
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US6008091A (en) * 1998-01-27 1999-12-28 Lucent Technologies Inc. Floating gate avalanche injection MOS transistors with high K dielectric control gates
JP3732345B2 (ja) * 1998-02-10 2006-01-05 株式会社沖データ 駆動回路、ｌｅｄヘッド及びプリンタ
US6452856B1 (en) * 1999-02-26 2002-09-17 Micron Technology, Inc. DRAM technology compatible processor/memory chips
US6259126B1 (en) 1999-11-23 2001-07-10 International Business Machines Corporation Low cost mixed memory integration with FERAM
US6693009B1 (en) * 2000-11-15 2004-02-17 Advanced Micro Devices, Inc. Flash memory cell with minimized floating gate to drain/source overlap for minimizing charge leakage
US20030232507A1 (en) * 2002-06-12 2003-12-18 Macronix International Co., Ltd. Method for fabricating a semiconductor device having an ONO film
US20050215074A1 (en) * 2004-03-26 2005-09-29 Fuja Shone ONO formation method
JP4864059B2 (ja) * 2008-09-29 2012-01-25 三菱電機株式会社 ヒートポンプ給湯機
KR102105485B1 (ko) * 2012-11-23 2020-04-29 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
CN108962899B (zh) * 2017-05-26 2021-12-17 智瑞佳（苏州）半导体科技有限公司 一种多次可编程(mtp)存储单元结构及其制作方法

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JPS5963763A (ja) * 1982-10-05 1984-04-11 Fujitsu Ltd 半導体装置の製造方法
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JPS59207665A (ja) * 1983-05-10 1984-11-24 Nippon Denso Co Ltd 半導体装置
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JPS6049662A (ja) * 1983-08-29 1985-03-18 Nec Corp 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP0187278B1 (de) 1992-11-11
US4768080A (en) 1988-08-30
JPS61136274A (ja) 1986-06-24
EP0187278A3 (en) 1986-12-30
US4720323A (en) 1988-01-19
EP0187278A2 (de) 1986-07-16
DE3586822T2 (de) 1993-04-08

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