DE3586217D1 - Gto-thyristor und verfahren zu dessen herstellung. - Google Patents

Gto-thyristor und verfahren zu dessen herstellung.

Info

Publication number
DE3586217D1
DE3586217D1 DE8585302920T DE3586217T DE3586217D1 DE 3586217 D1 DE3586217 D1 DE 3586217D1 DE 8585302920 T DE8585302920 T DE 8585302920T DE 3586217 T DE3586217 T DE 3586217T DE 3586217 D1 DE3586217 D1 DE 3586217D1
Authority
DE
Germany
Prior art keywords
production
gto thyristor
gto
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585302920T
Other languages
English (en)
Other versions
DE3586217T2 (de
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3586217D1 publication Critical patent/DE3586217D1/de
Application granted granted Critical
Publication of DE3586217T2 publication Critical patent/DE3586217T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8585302920T 1984-04-27 1985-04-25 Gto-thyristor und verfahren zu dessen herstellung. Expired - Fee Related DE3586217T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59086830A JPH0691244B2 (ja) 1984-04-27 1984-04-27 ゲートターンオフサイリスタの製造方法

Publications (2)

Publication Number Publication Date
DE3586217D1 true DE3586217D1 (de) 1992-07-23
DE3586217T2 DE3586217T2 (de) 1993-01-21

Family

ID=13897726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585302920T Expired - Fee Related DE3586217T2 (de) 1984-04-27 1985-04-25 Gto-thyristor und verfahren zu dessen herstellung.

Country Status (4)

Country Link
US (1) US4662957A (de)
EP (1) EP0160525B1 (de)
JP (1) JPH0691244B2 (de)
DE (1) DE3586217T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269556A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp アノ−ド短絡型ゲ−トタ−ンオフサイリスタの製造方法
JP2604580B2 (ja) * 1986-10-01 1997-04-30 三菱電機株式会社 アノード短絡形ゲートターンオフサイリスタ
DE3742638A1 (de) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh Gto-thyristor
JP2706120B2 (ja) * 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
US5072312A (en) * 1988-03-15 1991-12-10 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
US5248622A (en) * 1988-10-04 1993-09-28 Kabushiki Kashiba Toshiba Finely controlled semiconductor device and method of manufacturing the same
EP0409010A1 (de) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
DE3941932A1 (de) * 1989-12-19 1991-06-20 Eupec Gmbh & Co Kg Verfahren zum herstellen von anodenseitigen kurzschluessen in thyristoren
US5240865A (en) * 1990-07-30 1993-08-31 Texas Instruments Incorporated Method of forming a thyristor on an SOI substrate
US5352910A (en) * 1992-04-07 1994-10-04 Tokyo Denki Seizo Kabushiki Kaisha Semiconductor device with a buffer structure
JPH06216372A (ja) * 1992-12-17 1994-08-05 Siemens Ag Ｇｔｏサイリスタ
KR101149297B1 (ko) * 2008-12-19 2012-05-25 삼성전자주식회사 이중 모드 탄성파 센서, 그 제조 방법 및 이를 이용한 바이오 센서 시스템
US9355853B2 (en) * 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3941625A (en) * 1973-10-11 1976-03-02 General Electric Company Glass passivated gold diffused SCR pellet and method for making
JPS5136079A (ja) * 1974-09-24 1976-03-26 Hitachi Ltd Taanofusairisuta
JPS5261971A (en) * 1975-11-18 1977-05-21 Toshiba Corp Control of turn-off time of silicon controlled rectifying element
JPS6043032B2 (ja) * 1978-09-14 1985-09-26 株式会社日立製作所 ゲートターンオフサイリスタ
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ

Also Published As

Publication number Publication date
US4662957A (en) 1987-05-05
EP0160525B1 (de) 1992-06-17
JPS60231363A (ja) 1985-11-16
DE3586217T2 (de) 1993-01-21
EP0160525A2 (de) 1985-11-06
JPH0691244B2 (ja) 1994-11-14
EP0160525A3 (en) 1987-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee