DE3578438D1 - Verbessertes siliziumoxynitrid-material und verfahren zu dessen herstellung. - Google Patents
Verbessertes siliziumoxynitrid-material und verfahren zu dessen herstellung.Info
- Publication number
- DE3578438D1 DE3578438D1 DE8585902334T DE3578438T DE3578438D1 DE 3578438 D1 DE3578438 D1 DE 3578438D1 DE 8585902334 T DE8585902334 T DE 8585902334T DE 3578438 T DE3578438 T DE 3578438T DE 3578438 D1 DE3578438 D1 DE 3578438D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- silicon oxynitride
- oxynitride material
- improved silicon
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/627,366 US4543271A (en) | 1984-07-02 | 1984-07-02 | Silicon oxynitride material and photochemical process for forming same |
PCT/US1985/000728 WO1986000651A1 (en) | 1984-07-02 | 1985-04-22 | Improved silicon oxynitride material and process for forming same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3578438D1 true DE3578438D1 (de) | 1990-08-02 |
Family
ID=24514356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585902334T Expired - Fee Related DE3578438D1 (de) | 1984-07-02 | 1985-04-22 | Verbessertes siliziumoxynitrid-material und verfahren zu dessen herstellung. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4543271A (de) |
EP (1) | EP0188438B1 (de) |
JP (1) | JPS61502616A (de) |
KR (1) | KR890003018B1 (de) |
DE (1) | DE3578438D1 (de) |
HK (1) | HK93390A (de) |
IL (1) | IL75278A0 (de) |
WO (1) | WO1986000651A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4702936A (en) * | 1984-09-20 | 1987-10-27 | Applied Materials Japan, Inc. | Gas-phase growth process |
US4654226A (en) * | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
DE3902628A1 (de) * | 1989-01-30 | 1990-08-02 | Hauni Elektronik Gmbh | Duennschichtmaterial fuer sensoren oder aktuatoren und verfahren zu dessen herstellung |
FR2651782B1 (fr) * | 1989-09-14 | 1993-03-19 | Air Liquide | Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique. |
FR2695118B1 (fr) * | 1992-09-02 | 1994-10-07 | Air Liquide | Procédé de formation d'une couche barrière sur une surface d'un objet en verre. |
DE69333722T2 (de) * | 1993-05-31 | 2005-12-08 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen |
US5439846A (en) * | 1993-12-17 | 1995-08-08 | Sgs-Thomson Microelectronics, Inc. | Self-aligned method for forming contact with zero offset to gate |
US6107194A (en) * | 1993-12-17 | 2000-08-22 | Stmicroelectronics, Inc. | Method of fabricating an integrated circuit |
US6284584B1 (en) | 1993-12-17 | 2001-09-04 | Stmicroelectronics, Inc. | Method of masking for periphery salicidation of active regions |
US5728224A (en) * | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
US6841439B1 (en) * | 1997-07-24 | 2005-01-11 | Texas Instruments Incorporated | High permittivity silicate gate dielectric |
US7115461B2 (en) * | 1997-07-24 | 2006-10-03 | Texas Instruments Incorporated | High permittivity silicate gate dielectric |
US6316820B1 (en) | 1997-07-25 | 2001-11-13 | Hughes Electronics Corporation | Passivation layer and process for semiconductor devices |
US6046101A (en) * | 1997-12-31 | 2000-04-04 | Intel Corporation | Passivation technology combining improved adhesion in passivation and a scribe street without passivation |
US6352940B1 (en) * | 1998-06-26 | 2002-03-05 | Intel Corporation | Semiconductor passivation deposition process for interfacial adhesion |
US20010052323A1 (en) * | 1999-02-17 | 2001-12-20 | Ellie Yieh | Method and apparatus for forming material layers from atomic gasses |
US20050227239A1 (en) * | 2004-04-08 | 2005-10-13 | Joyce Timothy H | Microarray based affinity purification and analysis device coupled with solid state nanopore electrodes |
DE202007001431U1 (de) * | 2007-01-31 | 2007-05-16 | Infineon Technologies Austria Ag | Halbleiteranordnung und Leistungshalbleiterbauelement |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5148750B2 (de) * | 1971-08-26 | 1976-12-22 | ||
IT1088852B (it) * | 1976-11-01 | 1985-06-10 | Rca Corp | Struttura passivante per un dispositivo simeconduttore |
US4181751A (en) * | 1978-05-24 | 1980-01-01 | Hughes Aircraft Company | Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition |
JPS5559729A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Forming method of semiconductor surface insulating film |
US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
US4371587A (en) * | 1979-12-17 | 1983-02-01 | Hughes Aircraft Company | Low temperature process for depositing oxide layers by photochemical vapor deposition |
JPS5693344A (en) * | 1979-12-26 | 1981-07-28 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1984
- 1984-07-02 US US06/627,366 patent/US4543271A/en not_active Expired - Fee Related
-
1985
- 1985-04-22 KR KR1019860700127A patent/KR890003018B1/ko not_active IP Right Cessation
- 1985-04-22 WO PCT/US1985/000728 patent/WO1986000651A1/en active IP Right Grant
- 1985-04-22 DE DE8585902334T patent/DE3578438D1/de not_active Expired - Fee Related
- 1985-04-22 EP EP85902334A patent/EP0188438B1/de not_active Expired - Lifetime
- 1985-04-22 JP JP60501924A patent/JPS61502616A/ja active Granted
- 1985-05-22 IL IL75278A patent/IL75278A0/xx unknown
-
1990
- 1990-11-08 HK HK933/90A patent/HK93390A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
EP0188438B1 (de) | 1990-06-27 |
IL75278A0 (en) | 1985-09-29 |
KR890003018B1 (ko) | 1989-08-18 |
EP0188438A1 (de) | 1986-07-30 |
HK93390A (en) | 1990-11-16 |
US4543271A (en) | 1985-09-24 |
WO1986000651A1 (en) | 1986-01-30 |
JPS61502616A (ja) | 1986-11-13 |
JPH048511B2 (de) | 1992-02-17 |
KR860700269A (ko) | 1986-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |