DE3582036D1 - Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung. - Google Patents
Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung.Info
- Publication number
- DE3582036D1 DE3582036D1 DE8585402492T DE3582036T DE3582036D1 DE 3582036 D1 DE3582036 D1 DE 3582036D1 DE 8585402492 T DE8585402492 T DE 8585402492T DE 3582036 T DE3582036 T DE 3582036T DE 3582036 D1 DE3582036 D1 DE 3582036D1
- Authority
- DE
- Germany
- Prior art keywords
- integratable
- production
- bipolar transistor
- microwave bipolar
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/683,152 US4651410A (en) | 1984-12-18 | 1984-12-18 | Method of fabricating regions of a bipolar microwave integratable transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3582036D1 true DE3582036D1 (de) | 1991-04-11 |
Family
ID=24742786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585402492T Expired - Fee Related DE3582036D1 (de) | 1984-12-18 | 1985-12-13 | Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4651410A (de) |
EP (1) | EP0186578B1 (de) |
DE (1) | DE3582036D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0214802B1 (de) * | 1985-08-26 | 1991-06-05 | Matsushita Electric Industrial Co., Ltd. | Halbleiterbauelement mit einem abrupten Übergang und Verfahren zu seiner Herstellung mittels Epitaxie |
JPS6445166A (en) * | 1987-08-14 | 1989-02-17 | Toshiba Corp | Manufacture of semiconductor device |
JP2798769B2 (ja) * | 1990-02-22 | 1998-09-17 | 三洋電機株式会社 | 薄膜トランジスタの製造方法 |
US5252143A (en) * | 1990-10-15 | 1993-10-12 | Hewlett-Packard Company | Bipolar transistor structure with reduced collector-to-substrate capacitance |
US5866461A (en) * | 1990-12-30 | 1999-02-02 | Stmicroelectronics S.R.L. | Method for forming an integrated emitter switching configuration using bipolar transistors |
JPH04261026A (ja) * | 1991-01-08 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
EP0590804B1 (de) * | 1992-09-03 | 1997-02-05 | STMicroelectronics, Inc. | Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor |
US6468871B1 (en) * | 2000-11-07 | 2002-10-22 | National Semiconductor Corporation | Method of forming bipolar transistor salicided emitter using selective laser annealing |
DE102004038699A1 (de) * | 2004-08-10 | 2006-02-23 | Atmel Germany Gmbh | Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung |
DE102005009725A1 (de) * | 2005-03-03 | 2006-09-07 | Atmel Germany Gmbh | Verfahren zur Integration von zwei Bipolartransistoren in einen Halbleiterkörper, Halbleiteranordnung in einem Halbleiterkörper und Kaskodenschaltung |
US7604819B2 (en) * | 2006-05-26 | 2009-10-20 | Z-Medica Corporation | Clay-based hemostatic agents and devices for the delivery thereof |
EP3672417B1 (de) | 2017-07-24 | 2021-07-21 | Upfield Europe B.V. | Verfahren zum mischen von flüssigem speiseöl und geschmolzenem speisefett |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5539677A (en) * | 1978-09-14 | 1980-03-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device and its manufacturing |
JPS55130176A (en) * | 1979-03-30 | 1980-10-08 | Hitachi Ltd | Field effect semiconductor element and method of fabricating the same |
US4269631A (en) * | 1980-01-14 | 1981-05-26 | International Business Machines Corporation | Selective epitaxy method using laser annealing for making filamentary transistors |
US4381201A (en) * | 1980-03-11 | 1983-04-26 | Fujitsu Limited | Method for production of semiconductor devices |
JPS56135969A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Manufacture of semiconductor device |
US4487639A (en) * | 1980-09-26 | 1984-12-11 | Texas Instruments Incorporated | Localized epitaxy for VLSI devices |
JPS57211267A (en) * | 1981-06-22 | 1982-12-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
DE3278799D1 (en) * | 1981-08-31 | 1988-08-25 | Toshiba Kk | Method for manufacturing three-dimensional semiconductor device |
US4489478A (en) * | 1981-09-29 | 1984-12-25 | Fujitsu Limited | Process for producing a three-dimensional semiconductor device |
JPS5873156A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 半導体装置 |
JPS58164219A (ja) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | 積層型半導体装置の製造方法 |
US4546539A (en) * | 1982-12-08 | 1985-10-15 | Harris Corporation | I2 L Structure and fabrication process compatible with high voltage bipolar transistors |
FR2547954B1 (fr) * | 1983-06-21 | 1985-10-25 | Efcis | Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice |
US4523370A (en) * | 1983-12-05 | 1985-06-18 | Ncr Corporation | Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction |
-
1984
- 1984-12-18 US US06/683,152 patent/US4651410A/en not_active Expired - Lifetime
-
1985
- 1985-12-13 EP EP85402492A patent/EP0186578B1/de not_active Expired - Lifetime
- 1985-12-13 DE DE8585402492T patent/DE3582036D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0186578B1 (de) | 1991-03-06 |
EP0186578A2 (de) | 1986-07-02 |
US4651410A (en) | 1987-03-24 |
EP0186578A3 (en) | 1988-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SGS-THOMSON MICROELECTRONICS INC. (N.D.GES.DES STA |
|
8339 | Ceased/non-payment of the annual fee |