DE3682959D1 - Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung. - Google Patents

Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.

Info

Publication number
DE3682959D1
DE3682959D1 DE8686304785T DE3682959T DE3682959D1 DE 3682959 D1 DE3682959 D1 DE 3682959D1 DE 8686304785 T DE8686304785 T DE 8686304785T DE 3682959 T DE3682959 T DE 3682959T DE 3682959 D1 DE3682959 D1 DE 3682959D1
Authority
DE
Germany
Prior art keywords
heterouition
production
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304785T
Other languages
English (en)
Inventor
Kazuo Eda
Masanori Inada
Yorito Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13640285A external-priority patent/JPS61294857A/ja
Priority claimed from JP13640985A external-priority patent/JPS61294860A/ja
Priority claimed from JP13640585A external-priority patent/JPS61294858A/ja
Priority claimed from JP13726185A external-priority patent/JPS61294862A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3682959D1 publication Critical patent/DE3682959D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE8686304785T 1985-06-21 1986-06-20 Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung. Expired - Lifetime DE3682959D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13640285A JPS61294857A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法
JP13640985A JPS61294860A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法
JP13640585A JPS61294858A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法
JP13726185A JPS61294862A (ja) 1985-06-24 1985-06-24 バイポ−ラトランジスタの製造方法

Publications (1)

Publication Number Publication Date
DE3682959D1 true DE3682959D1 (de) 1992-01-30

Family

ID=27471995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304785T Expired - Lifetime DE3682959D1 (de) 1985-06-21 1986-06-20 Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.

Country Status (3)

Country Link
US (1) US4746626A (de)
EP (1) EP0206787B1 (de)
DE (1) DE3682959D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381855A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp ヘテロ接合バイポ−ラトランジスタの製造方法
CA1299771C (en) * 1987-02-06 1992-04-28 Tadao Ishibashi Heterojunction bipolar transistor with collector buffer layer
US5140399A (en) * 1987-04-30 1992-08-18 Sony Corporation Heterojunction bipolar transistor and the manufacturing method thereof
JP2619407B2 (ja) * 1987-08-24 1997-06-11 株式会社日立製作所 半導体装置の製造方法
US5159423A (en) * 1988-11-02 1992-10-27 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor
GB2243716B (en) * 1988-11-02 1993-05-05 Hughes Aircraft Co Self-aligned,planar heterojunction bipolar transistor and method of forming the same
US4956689A (en) * 1989-04-12 1990-09-11 Texas Instruments Incorporated High speed gallium arsenide transistor and method
US5053346A (en) * 1990-01-12 1991-10-01 Texas Instruments Incorporated Method for making a high speed gallium arsenide transistor
JPH0831409B2 (ja) * 1990-02-14 1996-03-27 株式会社東芝 化合物半導体装置およびその製造方法
EP0478923B1 (de) * 1990-08-31 1997-11-05 Texas Instruments Incorporated Verfahren zum Herstellen selbst-ausrichtender bipolarer Transistoren mit Heteroübergang
US5234848A (en) * 1991-11-05 1993-08-10 Texas Instruments Incorporated Method for fabricating lateral resonant tunneling transistor with heterojunction barriers
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
US5242843A (en) * 1992-10-28 1993-09-07 Allied-Signal Inc. Method for making a heterojunction bipolar transistor with improved high frequency response
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
US5640025A (en) * 1995-12-01 1997-06-17 Motorola High frequency semiconductor transistor
JP3509682B2 (ja) * 2000-01-31 2004-03-22 シャープ株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法、並びに、通信装置
US6773973B2 (en) * 2001-08-13 2004-08-10 Maxim Integrated Products, Inc. Semiconductor transistor having a polysilicon emitter and methods of making the same
US7494887B1 (en) * 2004-08-17 2009-02-24 Hrl Laboratories, Llc Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time
JP2006186235A (ja) * 2004-12-28 2006-07-13 Renesas Technology Corp 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US3413533A (en) * 1966-03-28 1968-11-26 Varian Associates Heterojunction semiconductor devices employing carrier multiplication in a high gap ratio emitterbase heterojunction
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
JPS553829A (en) * 1978-06-26 1980-01-11 Babcock Hitachi Kk Preventing method of steam leakage from centrifugal separator waste water trough
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact

Also Published As

Publication number Publication date
EP0206787B1 (de) 1991-12-18
EP0206787A2 (de) 1986-12-30
EP0206787A3 (en) 1987-11-11
US4746626A (en) 1988-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee