DE3581417D1 - Lateraler bipolarer transistor und verfahren zu seiner herstellung. - Google Patents
Lateraler bipolarer transistor und verfahren zu seiner herstellung.Info
- Publication number
- DE3581417D1 DE3581417D1 DE8585101688T DE3581417T DE3581417D1 DE 3581417 D1 DE3581417 D1 DE 3581417D1 DE 8585101688 T DE8585101688 T DE 8585101688T DE 3581417 T DE3581417 T DE 3581417T DE 3581417 D1 DE3581417 D1 DE 3581417D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- bipolar transistor
- lateral bipolar
- lateral
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59025029A JPH0618198B2 (ja) | 1984-02-15 | 1984-02-15 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581417D1 true DE3581417D1 (de) | 1991-02-28 |
Family
ID=12154481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585101688T Expired - Lifetime DE3581417D1 (de) | 1984-02-15 | 1985-02-15 | Lateraler bipolarer transistor und verfahren zu seiner herstellung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4769687A (de) |
EP (1) | EP0152116B1 (de) |
JP (1) | JPH0618198B2 (de) |
DE (1) | DE3581417D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
US6372596B1 (en) * | 1985-01-30 | 2002-04-16 | Texas Instruments Incorporated | Method of making horizontal bipolar transistor with insulated base structure |
DE3545244A1 (de) * | 1985-12-20 | 1987-06-25 | Licentia Gmbh | Strukturierter halbleiterkoerper |
JP2503460B2 (ja) * | 1986-12-01 | 1996-06-05 | 三菱電機株式会社 | バイポ−ラトランジスタおよびその製造方法 |
EP0271599B1 (de) * | 1986-12-18 | 1991-09-04 | Deutsche ITT Industries GmbH | Kollektorkontakt eines integrierten Bipolartransistors |
NL8700640A (nl) * | 1987-03-18 | 1988-10-17 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPS63292673A (ja) * | 1987-05-25 | 1988-11-29 | Nec Corp | 横型バイポ−ラトランジスタ |
US4860077A (en) * | 1987-09-28 | 1989-08-22 | Motorola, Inc. | Vertical semiconductor device having a sidewall emitter |
US4939474A (en) * | 1988-08-26 | 1990-07-03 | At&T Bell Laboratories | Semiconductor optical amplifier with shortened gain recovery time |
GB2230134A (en) * | 1989-04-05 | 1990-10-10 | Philips Nv | A method of manufacturing a semiconductor device |
US5043786A (en) * | 1989-04-13 | 1991-08-27 | International Business Machines Corporation | Lateral transistor and method of making same |
US4965217A (en) * | 1989-04-13 | 1990-10-23 | International Business Machines Corporation | Method of making a lateral transistor |
US5289024A (en) * | 1990-08-07 | 1994-02-22 | National Semiconductor Corporation | Bipolar transistor with diffusion compensation |
JP3202460B2 (ja) * | 1993-12-21 | 2001-08-27 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6232649B1 (en) * | 1994-12-12 | 2001-05-15 | Hyundai Electronics America | Bipolar silicon-on-insulator structure and process |
DE19741972C1 (de) | 1997-09-23 | 1998-09-17 | Siemens Ag | SOI-Zelle und Verfahren zu deren Herstellung |
US6853048B1 (en) * | 2000-08-11 | 2005-02-08 | Agere Systems Inc. | Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof |
US6864547B2 (en) | 2001-06-15 | 2005-03-08 | Agere Systems Inc. | Semiconductor device having a ghost source/drain region and a method of manufacture therefor |
US6958518B2 (en) * | 2001-06-15 | 2005-10-25 | Agere Systems Inc. | Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor |
US6809386B2 (en) * | 2002-08-29 | 2004-10-26 | Micron Technology, Inc. | Cascode I/O driver with improved ESD operation |
US7692483B2 (en) * | 2007-10-10 | 2010-04-06 | Atmel Corporation | Apparatus and method for preventing snap back in integrated circuits |
US8085604B2 (en) * | 2008-12-12 | 2011-12-27 | Atmel Corporation | Snap-back tolerant integrated circuits |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
JPS5244186A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Semiconductor intergrated circuit device |
US4333227A (en) * | 1979-11-29 | 1982-06-08 | International Business Machines Corporation | Process for fabricating a self-aligned micrometer bipolar transistor device |
US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
US4508579A (en) * | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
-
1984
- 1984-02-15 JP JP59025029A patent/JPH0618198B2/ja not_active Expired - Lifetime
-
1985
- 1985-02-15 DE DE8585101688T patent/DE3581417D1/de not_active Expired - Lifetime
- 1985-02-15 EP EP85101688A patent/EP0152116B1/de not_active Expired
-
1987
- 1987-04-20 US US07/040,125 patent/US4769687A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0618198B2 (ja) | 1994-03-09 |
EP0152116A3 (en) | 1986-12-30 |
EP0152116A2 (de) | 1985-08-21 |
US4769687A (en) | 1988-09-06 |
EP0152116B1 (de) | 1991-01-23 |
JPS60170257A (ja) | 1985-09-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |