DE3579367D1 - Halbleiterphotodetektor und verfahren zu seiner herstellung. - Google Patents

Halbleiterphotodetektor und verfahren zu seiner herstellung.

Info

Publication number
DE3579367D1
DE3579367D1 DE8585106588T DE3579367T DE3579367D1 DE 3579367 D1 DE3579367 D1 DE 3579367D1 DE 8585106588 T DE8585106588 T DE 8585106588T DE 3579367 T DE3579367 T DE 3579367T DE 3579367 D1 DE3579367 D1 DE 3579367D1
Authority
DE
Germany
Prior art keywords
production
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585106588T
Other languages
English (en)
Inventor
Masahiro Kobayashi
Susumu Yamazaki
Takashi Mikawa
Kazuo Nakajima
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3579367D1 publication Critical patent/DE3579367D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE8585106588T 1984-05-31 1985-05-29 Halbleiterphotodetektor und verfahren zu seiner herstellung. Expired - Lifetime DE3579367D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59109433A JPS611064A (ja) 1984-05-31 1984-05-31 半導体受光装置

Publications (1)

Publication Number Publication Date
DE3579367D1 true DE3579367D1 (de) 1990-10-04

Family

ID=14510120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585106588T Expired - Lifetime DE3579367D1 (de) 1984-05-31 1985-05-29 Halbleiterphotodetektor und verfahren zu seiner herstellung.

Country Status (5)

Country Link
US (1) US4656494A (de)
EP (1) EP0163295B1 (de)
JP (1) JPS611064A (de)
KR (1) KR900004180B1 (de)
DE (1) DE3579367D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581482B1 (fr) * 1985-05-03 1987-07-10 Labo Electronique Physique Photodiode pin a faible courant de fuite
EP0216572B1 (de) * 1985-09-24 1995-04-05 Kabushiki Kaisha Toshiba Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil
US4700209A (en) * 1985-10-30 1987-10-13 Rca Inc. Avalanche photodiode and a method of making same
JPS62259481A (ja) * 1986-04-15 1987-11-11 Fujitsu Ltd 半導体受光装置
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
US4857982A (en) * 1988-01-06 1989-08-15 University Of Southern California Avalanche photodiode with floating guard ring
US4876209A (en) * 1988-01-06 1989-10-24 U.S.C. Method of making avalanche photodiode
JPH01183174A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd 半導体受光素子
US5013871A (en) * 1988-02-10 1991-05-07 Olin Corporation Kit for the assembly of a metal electronic package
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
JP2970815B2 (ja) * 1990-04-11 1999-11-02 株式会社東芝 半導体受光素子
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
GB9118338D0 (en) * 1991-08-27 1991-10-16 Secretary Trade Ind Brit A radiation detector for detecting infrared radiation
US5365087A (en) * 1992-07-15 1994-11-15 Sumitomo Electric Industries, Ltd. Photodetector and opto-electronic integrated circuit with guard ring
US6147391A (en) * 1996-05-07 2000-11-14 The Regents Of The University Of California Semiconductor hetero-interface photodetector
US6074892A (en) * 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
JP2003198032A (ja) * 2001-12-27 2003-07-11 Mitsubishi Electric Corp 光素子、光素子モジュール及び光素子用キャリア
JP4755854B2 (ja) * 2005-06-02 2011-08-24 富士通株式会社 半導体受光装置及びその製造方法
JP4861887B2 (ja) 2007-04-20 2012-01-25 日本オプネクスト株式会社 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法
JP6036197B2 (ja) * 2012-11-13 2016-11-30 三菱電機株式会社 アバランシェフォトダイオードの製造方法
WO2018153503A1 (en) 2017-02-23 2018-08-30 Iris Industries Sa Short-wave infrared detector array and method for the manufacturing thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2252653B1 (de) * 1973-11-28 1976-10-01 Thomson Csf
JPS526097A (en) * 1975-07-03 1977-01-18 Moririka:Kk Planar type photodiode
JPS54107291A (en) * 1978-02-10 1979-08-22 Nec Corp Avalanche photo diode
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device
JPS55124278A (en) * 1979-03-20 1980-09-25 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode
FR2458145A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure monolithique comportant un composant semi-conducteur et un capteur de derive thermique, et systeme de regulation d'un composant electronique
US4442444A (en) * 1980-07-08 1984-04-10 Fujitsu Limited Avalanche photodiodes
JPS5763867A (en) * 1980-10-04 1982-04-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor avalanche diode
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法

Also Published As

Publication number Publication date
EP0163295A2 (de) 1985-12-04
US4656494A (en) 1987-04-07
EP0163295B1 (de) 1990-08-29
KR900004180B1 (ko) 1990-06-18
EP0163295A3 (en) 1986-12-03
KR850008405A (ko) 1985-12-16
JPS611064A (ja) 1986-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee