DE3587364D1 - Feldeffekttransistor mit selbstjustierter torelektrode und verfahren zu seiner herstellung. - Google Patents

Feldeffekttransistor mit selbstjustierter torelektrode und verfahren zu seiner herstellung.

Info

Publication number
DE3587364D1
DE3587364D1 DE8585114474T DE3587364T DE3587364D1 DE 3587364 D1 DE3587364 D1 DE 3587364D1 DE 8585114474 T DE8585114474 T DE 8585114474T DE 3587364 T DE3587364 T DE 3587364T DE 3587364 D1 DE3587364 D1 DE 3587364D1
Authority
DE
Germany
Prior art keywords
self
production
gate electrode
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585114474T
Other languages
English (en)
Other versions
DE3587364T2 (de
Inventor
Motoki Furukawa
Yoshihiro Kishita
Tatsuro Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3587364D1 publication Critical patent/DE3587364D1/de
Publication of DE3587364T2 publication Critical patent/DE3587364T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE85114474T 1984-11-14 1985-11-14 Feldeffekttransistor mit selbstjustierter Torelektrode und Verfahren zu seiner Herstellung. Expired - Fee Related DE3587364T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238513A JPS61117868A (ja) 1984-11-14 1984-11-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE3587364D1 true DE3587364D1 (de) 1993-07-01
DE3587364T2 DE3587364T2 (de) 1993-11-18

Family

ID=17031365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85114474T Expired - Fee Related DE3587364T2 (de) 1984-11-14 1985-11-14 Feldeffekttransistor mit selbstjustierter Torelektrode und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
US (1) US4951121A (de)
EP (1) EP0184047B1 (de)
JP (1) JPS61117868A (de)
DE (1) DE3587364T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658019B2 (ja) * 1986-07-03 1997-09-30 ソニー株式会社 半導体装置の製造方法
JPH0821596B2 (ja) * 1987-09-30 1996-03-04 三菱電機株式会社 電界効果トランジスタの製造方法
JPH05206139A (ja) * 1991-11-19 1993-08-13 Nec Corp 基板接続電極およびその製造方法
JP3502651B2 (ja) 1993-02-08 2004-03-02 トリクイント セミコンダクター テキサス、エルピー 電極形成法
TW270213B (de) * 1993-12-08 1996-02-11 Matsushita Electric Ind Co Ltd
US5652444A (en) * 1995-09-22 1997-07-29 Hughes Electronics Structure and method for making FETs and HEMTs insensitive to hydrogen gas
JP2001298192A (ja) 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置およびその製造方法
JP2001298193A (ja) 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置およびその製造方法
JP4907783B2 (ja) * 2001-05-30 2012-04-04 株式会社岡村製作所 移動式パネルにおける遮蔽構造
JP4221697B2 (ja) * 2002-06-17 2009-02-12 日本電気株式会社 半導体装置
JP4925601B2 (ja) * 2005-04-18 2012-05-09 三菱電機株式会社 半導体装置
US8421121B2 (en) * 2007-04-18 2013-04-16 Northrop Grumman Systems Corporation Antimonide-based compound semiconductor with titanium tungsten stack
US8053348B2 (en) 2009-03-11 2011-11-08 International Business Machines Corporation Method of forming a semiconductor device using a sacrificial uniform vertical thickness spacer structure
US10796721B1 (en) 2018-04-10 2020-10-06 Seagate Technology Llc Advanced air bearing slider
CN112768354B (zh) * 2020-12-30 2022-07-29 济南晶正电子科技有限公司 一种退火方法、复合薄膜及电子元件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260568A (en) * 1975-11-14 1977-05-19 Toshiba Corp Production of schottky diode
JPS56100480A (en) * 1980-01-11 1981-08-12 Nec Corp Electric field effect transistor
JPS57153475A (en) * 1981-03-17 1982-09-22 Nec Corp Multi layer electrode
CA1197926A (en) * 1981-12-16 1985-12-10 William D. Ryden Zero drain overlap and self-aligned contacts and contact methods for mod devices
JPS5950567A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 電界効果トランジスタの製造方法
JPS59119867A (ja) * 1982-12-27 1984-07-11 Toshiba Corp 半導体装置
JPS59181676A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd 半導体装置
JPS60183726A (ja) * 1984-03-02 1985-09-19 Toshiba Corp 半導体装置の電極パタ−ンの形成方法

Also Published As

Publication number Publication date
EP0184047A3 (en) 1987-04-08
DE3587364T2 (de) 1993-11-18
EP0184047A2 (de) 1986-06-11
US4951121A (en) 1990-08-21
EP0184047B1 (de) 1993-05-26
JPS61117868A (ja) 1986-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee