GB2243716B - Self-aligned,planar heterojunction bipolar transistor and method of forming the same - Google Patents
Self-aligned,planar heterojunction bipolar transistor and method of forming the sameInfo
- Publication number
- GB2243716B GB2243716B GB8924432A GB8924432A GB2243716B GB 2243716 B GB2243716 B GB 2243716B GB 8924432 A GB8924432 A GB 8924432A GB 8924432 A GB8924432 A GB 8924432A GB 2243716 B GB2243716 B GB 2243716B
- Authority
- GB
- United Kingdom
- Prior art keywords
- aligned
- self
- forming
- same
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26627888A | 1988-11-02 | 1988-11-02 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8924432D0 GB8924432D0 (en) | 1991-08-21 |
GB2243716A GB2243716A (en) | 1991-11-06 |
GB2243716B true GB2243716B (en) | 1993-05-05 |
Family
ID=23013915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8924432A Expired - Lifetime GB2243716B (en) | 1988-11-02 | 1989-10-31 | Self-aligned,planar heterojunction bipolar transistor and method of forming the same |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2243716B (en) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2010580A (en) * | 1977-11-14 | 1979-06-27 | Tokyo Shibaura Electric Co | Method for manufacturing a semiconductor device |
EP0004292A2 (en) * | 1978-03-27 | 1979-10-03 | International Business Machines Corporation | Process of making a MESA bipolar transistor with self-aligned base and emitter regions |
EP0199497A2 (en) * | 1985-04-10 | 1986-10-29 | Fujitsu Limited | Process for fabricating a self-aligned bipolar transistor |
EP0206787A2 (en) * | 1985-06-21 | 1986-12-30 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method of manufacturing same |
GB2179792A (en) * | 1985-08-28 | 1987-03-11 | Mitsubishi Electric Corp | Bipolar transistor |
US4683487A (en) * | 1984-11-09 | 1987-07-28 | Hitachi, Ltd. | Heterojunction bipolar transistor |
EP0255882A2 (en) * | 1986-08-07 | 1988-02-17 | Siemens Aktiengesellschaft | Npn bipolar transistor with extremely thin emitter/base structure and method for manufacturing the same |
EP0289343A1 (en) * | 1987-04-30 | 1988-11-02 | Sony Corporation | Heterojunction bipolar transistors |
EP0312965A2 (en) * | 1987-10-23 | 1989-04-26 | Siemens Aktiengesellschaft | Method of producing a planar self-aligned heterojunction bipolar transistor |
EP0335720A2 (en) * | 1988-03-30 | 1989-10-04 | Kabushiki Kaisha Toshiba | Bipolar transistor device and method of manufacturing the same |
EP0367698A2 (en) * | 1988-10-31 | 1990-05-09 | International Business Machines Corporation | Heretojunction bipolar transistor |
-
1989
- 1989-10-31 GB GB8924432A patent/GB2243716B/en not_active Expired - Lifetime
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2010580A (en) * | 1977-11-14 | 1979-06-27 | Tokyo Shibaura Electric Co | Method for manufacturing a semiconductor device |
EP0004292A2 (en) * | 1978-03-27 | 1979-10-03 | International Business Machines Corporation | Process of making a MESA bipolar transistor with self-aligned base and emitter regions |
US4683487A (en) * | 1984-11-09 | 1987-07-28 | Hitachi, Ltd. | Heterojunction bipolar transistor |
EP0199497A2 (en) * | 1985-04-10 | 1986-10-29 | Fujitsu Limited | Process for fabricating a self-aligned bipolar transistor |
EP0206787A2 (en) * | 1985-06-21 | 1986-12-30 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method of manufacturing same |
GB2179792A (en) * | 1985-08-28 | 1987-03-11 | Mitsubishi Electric Corp | Bipolar transistor |
EP0255882A2 (en) * | 1986-08-07 | 1988-02-17 | Siemens Aktiengesellschaft | Npn bipolar transistor with extremely thin emitter/base structure and method for manufacturing the same |
EP0289343A1 (en) * | 1987-04-30 | 1988-11-02 | Sony Corporation | Heterojunction bipolar transistors |
EP0312965A2 (en) * | 1987-10-23 | 1989-04-26 | Siemens Aktiengesellschaft | Method of producing a planar self-aligned heterojunction bipolar transistor |
EP0335720A2 (en) * | 1988-03-30 | 1989-10-04 | Kabushiki Kaisha Toshiba | Bipolar transistor device and method of manufacturing the same |
EP0367698A2 (en) * | 1988-10-31 | 1990-05-09 | International Business Machines Corporation | Heretojunction bipolar transistor |
Non-Patent Citations (2)
Title |
---|
Applied physics letter, Vol.52 No10, 7 March 1988,pp822-824. * |
GaAs Integrated Circuit Symposium,1EEE Technical Digest 1985catalogue No.85CH2182,pp53-56 * |
Also Published As
Publication number | Publication date |
---|---|
GB2243716A (en) | 1991-11-06 |
GB8924432D0 (en) | 1991-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |
Expiry date: 20091030 |