DE3381711D1 - Halbleiteranordnung und verfahren zu deren herstellung. - Google Patents
Halbleiteranordnung und verfahren zu deren herstellung.Info
- Publication number
- DE3381711D1 DE3381711D1 DE8383112624T DE3381711T DE3381711D1 DE 3381711 D1 DE3381711 D1 DE 3381711D1 DE 8383112624 T DE8383112624 T DE 8383112624T DE 3381711 T DE3381711 T DE 3381711T DE 3381711 D1 DE3381711 D1 DE 3381711D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57220641A JPS59110179A (ja) | 1982-12-16 | 1982-12-16 | 半導体装置およびその製造法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3381711D1 true DE3381711D1 (de) | 1990-08-09 |
Family
ID=16754146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383112624T Expired - Lifetime DE3381711D1 (de) | 1982-12-16 | 1983-12-15 | Halbleiteranordnung und verfahren zu deren herstellung. |
Country Status (5)
Country | Link |
---|---|
US (2) | US4788582A (de) |
EP (1) | EP0111899B1 (de) |
JP (1) | JPS59110179A (de) |
CA (1) | CA1232051A (de) |
DE (1) | DE3381711D1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
US4529619A (en) * | 1984-07-16 | 1985-07-16 | Xerox Corporation | Ohmic contacts for hydrogenated amorphous silicon |
US4774207A (en) * | 1987-04-20 | 1988-09-27 | General Electric Company | Method for producing high yield electrical contacts to N+ amorphous silicon |
US5091764A (en) * | 1988-09-30 | 1992-02-25 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device having a transparent electrode and amorphous semiconductor layers |
JPH07105483B2 (ja) * | 1988-12-16 | 1995-11-13 | 鐘淵化学工業株式会社 | 半導体イメージセンサ |
JPH02186636A (ja) * | 1989-01-12 | 1990-07-20 | Seiko Epson Corp | 集積回路装置の配線法 |
IL96561A0 (en) * | 1989-12-28 | 1991-09-16 | Minnesota Mining & Mfg | Amorphous silicon sensor |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
US5449924A (en) * | 1993-01-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Photodiode having a Schottky barrier formed on the lower metallic electrode |
JP2701726B2 (ja) * | 1993-12-28 | 1998-01-21 | 日本電気株式会社 | 固体撮像装置 |
US6117771A (en) * | 1998-02-27 | 2000-09-12 | International Business Machines Corporation | Method for depositing cobalt |
US6323417B1 (en) | 1998-09-29 | 2001-11-27 | Lockheed Martin Corporation | Method of making I-III-VI semiconductor materials for use in photovoltaic cells |
US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US6445014B1 (en) | 1999-06-16 | 2002-09-03 | Micron Technology Inc. | Retrograde well structure for a CMOS imager |
US6310366B1 (en) | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
US6654057B1 (en) * | 1999-06-17 | 2003-11-25 | Micron Technology, Inc. | Active pixel sensor with a diagonal active area |
US6326652B1 (en) | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
US6414342B1 (en) * | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
US6204524B1 (en) | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
JP3414343B2 (ja) | 1999-11-26 | 2003-06-09 | 日本電気株式会社 | イメージセンサ及びその製造方法 |
US6407440B1 (en) | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
US6455836B1 (en) * | 2000-04-25 | 2002-09-24 | Agilent Technologies, Inc. | Metallic optical barrier for photo-detector array is also interconnecting electrode |
US6611037B1 (en) | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
US6689950B2 (en) * | 2001-04-27 | 2004-02-10 | The Boeing Company | Paint solar cell and its fabrication |
AU2002321022A1 (en) * | 2001-05-16 | 2002-11-25 | Stmicroelectronics N.V. | Optoelectronic component having a conductive contact structure |
US7560750B2 (en) * | 2003-06-26 | 2009-07-14 | Kyocera Corporation | Solar cell device |
WO2006089447A1 (en) * | 2005-02-28 | 2006-08-31 | Unaxis Balzers Aktiengesellschaft | Method of fabricating an image sensor device with reduced pixel cross-talk |
US8501522B2 (en) * | 2008-05-30 | 2013-08-06 | Gtat Corporation | Intermetal stack for use in a photovoltaic cell |
US7915522B2 (en) | 2008-05-30 | 2011-03-29 | Twin Creeks Technologies, Inc. | Asymmetric surface texturing for use in a photovoltaic cell and method of making |
US20100116329A1 (en) * | 2008-06-09 | 2010-05-13 | Fitzgerald Eugene A | Methods of forming high-efficiency solar cell structures |
DE102008051670A1 (de) * | 2008-10-15 | 2009-11-05 | H2 Solar Gmbh | Silicide zur photoelektrochemischen Wasserspaltung und/oder Erzeugung von Elektrizität |
US20110132445A1 (en) * | 2009-05-29 | 2011-06-09 | Pitera Arthur J | High-efficiency multi-junction solar cell structures |
US8604330B1 (en) | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
US9312426B2 (en) | 2011-12-07 | 2016-04-12 | International Business Machines Corporation | Structure with a metal silicide transparent conductive electrode and a method of forming the structure |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2112812C2 (de) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung |
US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
FR2463508A1 (fr) * | 1979-08-16 | 1981-02-20 | Anvar | Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene |
JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
US4278704A (en) * | 1980-01-30 | 1981-07-14 | Rca Corporation | Method for forming an electrical contact to a solar cell |
US4297393A (en) * | 1980-02-28 | 1981-10-27 | Rca Corporation | Method of applying thin metal deposits to a substrate |
JPS56157075A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Photoelectric transducing device |
US4322453A (en) * | 1980-12-08 | 1982-03-30 | International Business Machines Corporation | Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering |
JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
JPS584924A (ja) * | 1981-07-01 | 1983-01-12 | Hitachi Ltd | 半導体装置の電極形成方法 |
US4534099A (en) * | 1982-10-15 | 1985-08-13 | Standard Oil Company (Indiana) | Method of making multilayer photoelectrodes and photovoltaic cells |
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
-
1982
- 1982-12-16 JP JP57220641A patent/JPS59110179A/ja active Granted
-
1983
- 1983-12-12 CA CA000443019A patent/CA1232051A/en not_active Expired
- 1983-12-15 EP EP19830112624 patent/EP0111899B1/de not_active Expired - Lifetime
- 1983-12-15 DE DE8383112624T patent/DE3381711D1/de not_active Expired - Lifetime
-
1986
- 1986-11-10 US US06/929,056 patent/US4788582A/en not_active Expired - Fee Related
-
1988
- 1988-10-03 US US07/252,144 patent/US5151385A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0111899A3 (en) | 1987-01-28 |
CA1232051A (en) | 1988-01-26 |
EP0111899B1 (de) | 1990-07-04 |
US4788582A (en) | 1988-11-29 |
JPH0481353B2 (de) | 1992-12-22 |
US5151385A (en) | 1992-09-29 |
JPS59110179A (ja) | 1984-06-26 |
EP0111899A2 (de) | 1984-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3381711D1 (de) | Halbleiteranordnung und verfahren zu deren herstellung. | |
DE3586822D1 (de) | Halbleiteranordnung und verfahren zu deren herstellung. | |
DE3769400D1 (de) | Verkapselte halbleiteranordnung und verfahren zu deren herstellung. | |
DE3483709D1 (de) | Halbleiterspeicher und verfahren zu seiner herstellung. | |
ATA901883A (de) | Polydom, verfahren zu seiner herstellung und immunodiagnostische verfahren | |
DE3585069D1 (de) | Biologisch degradierbare form und verfahren zu deren herstellung. | |
ATA464482A (de) | Ausweiskarte und verfahren zu deren herstellung | |
DE3679087D1 (de) | Halbleitervorrichtung und verfahren zu seiner herstellung. | |
DE3483225D1 (de) | Waesserige atelocollagen-loesung und verfahren zu deren herstellung. | |
AT388932B (de) | Hybridomazellinie und verfahren zu deren herstellung | |
DE3072196D1 (de) | Verformbare metall-kunststoff-metall-schichtstoffe und verfahren zu deren herstellung. | |
DE3672271D1 (de) | Reinigungsmittel, deren bestandteile und verfahren zu deren herstellung. | |
DE3684085D1 (de) | Reinigungsmittelzusammensetzung und verfahren zu deren herstellung. | |
DE3675741D1 (de) | Vernetzte copolyamidimide und verfahren zu deren herstellung. | |
DE3667259D1 (de) | Orientierte elastomerfolie und verfahren zu deren herstellung. | |
DE3782201D1 (de) | Halbleiterphotosensor und verfahren zu dessen herstellung. | |
DE3580487D1 (de) | Aromatische aminosulfonverbindungen und verfahren zu deren herstellung. | |
DE3782952D1 (de) | Supraleitende dipolmagnete und verfahren zu deren herstellung. | |
DE3576931D1 (de) | Mehrschichtstoffe und verfahren zu deren herstellung. | |
DE3381823D1 (de) | Gegenstand aus teilweise gesintertem polytetrafluoraethylen und verfahren zu deren herstellung. | |
DE3484825D1 (de) | Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. | |
DE3484666D1 (de) | Halbleiteranordnung mit heterouebergang und verfahren zu deren herstellung. | |
DE3578270D1 (de) | Feldeffekt-transistor-anordnung und verfahren zu deren herstellung. | |
DE3484048D1 (de) | Phenylethylamine, verfahren zu deren herstellung und diese enthaltende zusammensetzungen. | |
DE3586217D1 (de) | Gto-thyristor und verfahren zu dessen herstellung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |