DE3484825D1 - Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. - Google Patents

Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.

Info

Publication number
DE3484825D1
DE3484825D1 DE8484300214T DE3484825T DE3484825D1 DE 3484825 D1 DE3484825 D1 DE 3484825D1 DE 8484300214 T DE8484300214 T DE 8484300214T DE 3484825 T DE3484825 T DE 3484825T DE 3484825 D1 DE3484825 D1 DE 3484825D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484300214T
Other languages
English (en)
Inventor
Masaki Okajima
Nawoto Motegi
Yuhei Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3484825D1 publication Critical patent/DE3484825D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
DE8484300214T 1983-01-14 1984-01-13 Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. Expired - Lifetime DE3484825D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58004457A JPS59129486A (ja) 1983-01-14 1983-01-14 半導体レーザ装置の製造方法

Publications (1)

Publication Number Publication Date
DE3484825D1 true DE3484825D1 (de) 1991-08-29

Family

ID=11584673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484300214T Expired - Lifetime DE3484825D1 (de) 1983-01-14 1984-01-13 Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.

Country Status (4)

Country Link
US (1) US4647953A (de)
EP (1) EP0114109B1 (de)
JP (1) JPS59129486A (de)
DE (1) DE3484825D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0157555B1 (de) * 1984-03-27 1990-10-03 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser und Verfahren zu dessen Fabrikation
JPS6174382A (ja) * 1984-09-20 1986-04-16 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置およびその製造方法
JP2716693B2 (ja) * 1985-02-08 1998-02-18 ソニー株式会社 半導体レーザー
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
JPS62130581A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 半導体レーザの製造方法
FR2596529B1 (fr) * 1986-03-28 1988-05-13 Thomson Csf Guide d'onde optique en materiau semiconducteur, laser appliquant ce guide d'onde et procede de realisation
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
US4821278A (en) * 1987-04-02 1989-04-11 Trw Inc. Inverted channel substrate planar semiconductor laser
JPS63265485A (ja) * 1987-04-23 1988-11-01 Sony Corp 半導体レ−ザ
US4956682A (en) * 1987-04-28 1990-09-11 Matsushita Electric Industrial Co., Ltd. Optoelectronic integrated circuit
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
US4941025A (en) * 1987-12-30 1990-07-10 Bell Communications Research, Inc. Quantum well semiconductor structures for infrared and submillimeter light sources
US4884112A (en) * 1988-03-18 1989-11-28 The United States Of America As Repressented By The Secretary Of The Air Force Silicon light-emitting diode with integral optical waveguide
KR960014732B1 (ko) * 1992-12-22 1996-10-19 양승택 Rwg형 반도체 레이저장치 및 제조방법
US6711191B1 (en) * 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US6839369B2 (en) * 2001-06-26 2005-01-04 The Furukawa Electric Co., Ltd. Surface emitting semiconductor laser device
US7380761B2 (en) * 2006-09-28 2008-06-03 Motorola, Inc. Mounting and alignment bracket assembly for communication equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526093A (en) * 1975-07-04 1977-01-18 Hitachi Ltd Production method of semiconductor device
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
JPS5669885A (en) * 1979-11-12 1981-06-11 Toshiba Corp Semiconductor laser device
US4366568A (en) * 1979-12-20 1982-12-28 Matsushita Electric Industrial Co. Ltd. Semiconductor laser
JPS5766685A (en) * 1980-06-03 1982-04-22 Nec Corp Rib structure semiconductor laser
JPS5791581A (en) * 1980-11-28 1982-06-07 Sharp Corp Semiconductor laser element and manufacture therefor
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
JPS5980984A (ja) * 1982-11-01 1984-05-10 Hitachi Ltd 面発光分布帰還形半導体レ−ザ素子

Also Published As

Publication number Publication date
US4647953A (en) 1987-03-03
EP0114109A3 (en) 1987-05-06
JPS59129486A (ja) 1984-07-25
EP0114109B1 (de) 1991-07-24
JPH021387B2 (de) 1990-01-11
EP0114109A2 (de) 1984-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee