DE3579929D1 - Halbleiterlaser und verfahren zu dessen fabrikation. - Google Patents

Halbleiterlaser und verfahren zu dessen fabrikation.

Info

Publication number
DE3579929D1
DE3579929D1 DE8585301989T DE3579929T DE3579929D1 DE 3579929 D1 DE3579929 D1 DE 3579929D1 DE 8585301989 T DE8585301989 T DE 8585301989T DE 3579929 T DE3579929 T DE 3579929T DE 3579929 D1 DE3579929 D1 DE 3579929D1
Authority
DE
Germany
Prior art keywords
fabrication
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301989T
Other languages
English (en)
Inventor
Akio Yoshikawa
Takashi Sugino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59058712A external-priority patent/JPH067621B2/ja
Priority claimed from JP59137932A external-priority patent/JPH0632327B2/ja
Priority claimed from JP59166172A external-priority patent/JPH0632331B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3579929D1 publication Critical patent/DE3579929D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585301989T 1984-03-27 1985-03-22 Halbleiterlaser und verfahren zu dessen fabrikation. Expired - Lifetime DE3579929D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59058712A JPH067621B2 (ja) 1984-03-27 1984-03-27 半導体レ−ザ装置およびその製造方法
JP59137932A JPH0632327B2 (ja) 1984-07-05 1984-07-05 半導体レ−ザ装置およびその製造方法
JP59166172A JPH0632331B2 (ja) 1984-08-08 1984-08-08 半導体レ−ザ装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE3579929D1 true DE3579929D1 (de) 1990-11-08

Family

ID=27296660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301989T Expired - Lifetime DE3579929D1 (de) 1984-03-27 1985-03-22 Halbleiterlaser und verfahren zu dessen fabrikation.

Country Status (3)

Country Link
US (2) US4719633A (de)
EP (1) EP0157555B1 (de)
DE (1) DE3579929D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
DE3714523A1 (de) * 1987-04-30 1988-11-10 Siemens Ag Laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und verfahren zu deren herstellung
DE3732822A1 (de) * 1987-09-29 1989-04-06 Siemens Ag Laserdiode mit indexfuehrung, insbesondere laserdioden-array mit wellenleiterstruktur
KR900013612A (ko) * 1989-02-17 1990-09-05 프레데릭 얀 스미트 두 물체의 연결 방법 및 장치
EP0450255B1 (de) * 1990-04-06 1994-07-06 International Business Machines Corporation Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers
JPH0474488A (ja) * 1990-07-16 1992-03-09 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JP2613975B2 (ja) * 1990-12-04 1997-05-28 シャープ株式会社 周期利得型半導体レーザ素子
US5362675A (en) * 1991-12-24 1994-11-08 Samsung Electronics Co., Ltd. Manufacturing method of laser diode and laser diode array
US5659179A (en) * 1995-03-07 1997-08-19 Motorola Ultra-small semiconductor devices having patterned edge planar surfaces
US6556605B1 (en) * 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
JP3765987B2 (ja) * 2001-02-15 2006-04-12 ユーディナデバイス株式会社 半導体装置の製造方法
JP4582210B2 (ja) * 2008-06-20 2010-11-17 ソニー株式会社 半導体レーザ、半導体レーザの製造方法、光ディスク装置および光ピックアップ

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4236122A (en) * 1978-04-26 1980-11-25 Bell Telephone Laboratories, Incorporated Mesa devices fabricated on channeled substrates
US4366568A (en) * 1979-12-20 1982-12-28 Matsushita Electric Industrial Co. Ltd. Semiconductor laser
US4429397A (en) * 1980-06-26 1984-01-31 Nippon Electric Co., Ltd. Buried heterostructure laser diode
JPS5743428A (en) * 1980-08-28 1982-03-11 Nec Corp Mesa etching method
JPS57139986A (en) * 1981-02-24 1982-08-30 Sanyo Electric Co Ltd Manufacure of semiconductor laser
JPS57139982A (en) * 1981-02-24 1982-08-30 Nec Corp Semiconductor laser element
US4429395A (en) * 1981-06-01 1984-01-31 Rca Corporation Semiconductor laser
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
JPS5810884A (ja) * 1981-07-14 1983-01-21 Nec Corp 埋め込みヘテロ構造半導体レ−ザの製造方法
JPS5886789A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS5897887A (ja) * 1981-12-07 1983-06-10 Nec Corp 埋め込み構造半導体レ−ザ
JPS58216486A (ja) * 1982-06-10 1983-12-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザおよびその製造方法
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
JPS6021586A (ja) * 1983-07-15 1985-02-02 Hitachi Ltd 化合物半導体装置
JPS6020594A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 半導体レ−ザの製造方法
JPS6050983A (ja) * 1983-08-30 1985-03-22 Sharp Corp 半導体レ−ザ素子の製造方法
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPS6068685A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 埋め込み型半導体レ−ザの製造方法
JPS6077482A (ja) * 1983-10-04 1985-05-02 Nec Corp 半導体レ−ザの製造方法
FR2574601B1 (fr) * 1984-12-11 1987-07-17 Menigaux Louis Procede de fabrication d'un laser a semi-conducteur a ruban enterre

Also Published As

Publication number Publication date
US4719633A (en) 1988-01-12
EP0157555B1 (de) 1990-10-03
US4948753A (en) 1990-08-14
EP0157555A3 (en) 1987-01-28
EP0157555A2 (de) 1985-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee