JPS56134775A - Semiconductor non-volatile memory element - Google Patents

Semiconductor non-volatile memory element

Info

Publication number
JPS56134775A
JPS56134775A JP3920780A JP3920780A JPS56134775A JP S56134775 A JPS56134775 A JP S56134775A JP 3920780 A JP3920780 A JP 3920780A JP 3920780 A JP3920780 A JP 3920780A JP S56134775 A JPS56134775 A JP S56134775A
Authority
JP
Japan
Prior art keywords
sio2
memory element
floating gate
volatile memory
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3920780A
Other languages
Japanese (ja)
Other versions
JPS629229B2 (en
Inventor
Yasuki Rai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3920780A priority Critical patent/JPS56134775A/en
Publication of JPS56134775A publication Critical patent/JPS56134775A/en
Publication of JPS629229B2 publication Critical patent/JPS629229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Abstract

PURPOSE:To perform a storage of charging at a low voltage by a method wherein SiO2 film is made thicker than that showing a high tonnel effect in non-volatile memory element and a transluent metal having oxidized surface is applied as a floating gate. CONSTITUTION:In non-volatile memory element composed of Si base plate 1, SiO2 4, a floating gate 6, Si3N4 7 and a gate electrode 8, the SiO2 4 has a thickness of about 2,000Angstrom having a dominating Faranodeheim tunnel phenomenon, and Si3N4 7 has a thickness of about 9,000Angstrom . Mo is used in the floating gate electrode 6 and a thermo oxidation film 11 is operated as a conductor, and when a negative voltage is applied to the gate electrode 8, Mo itself provides a mirror image effect for SiO2 4, its difference in work function for SiO2 is reduced due to a degree of energy level in MoO, resulting in reducing a sheath voltage. With this arrangement, a mere oxidation of the floating gate causes the sheath voltage to be reduced, results in providing a highly practical memory element.
JP3920780A 1980-03-26 1980-03-26 Semiconductor non-volatile memory element Granted JPS56134775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3920780A JPS56134775A (en) 1980-03-26 1980-03-26 Semiconductor non-volatile memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920780A JPS56134775A (en) 1980-03-26 1980-03-26 Semiconductor non-volatile memory element

Publications (2)

Publication Number Publication Date
JPS56134775A true JPS56134775A (en) 1981-10-21
JPS629229B2 JPS629229B2 (en) 1987-02-27

Family

ID=12546681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3920780A Granted JPS56134775A (en) 1980-03-26 1980-03-26 Semiconductor non-volatile memory element

Country Status (1)

Country Link
JP (1) JPS56134775A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153372A (en) * 1982-03-05 1983-09-12 Sanyo Electric Co Ltd Manufacture of semiconductor non-volatile memory
EP0187278A2 (en) * 1984-12-07 1986-07-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JPH0770626B2 (en) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Non-volatile memory cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153372A (en) * 1982-03-05 1983-09-12 Sanyo Electric Co Ltd Manufacture of semiconductor non-volatile memory
JPH0770626B2 (en) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Non-volatile memory cell
EP0187278A2 (en) * 1984-12-07 1986-07-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US4720323A (en) * 1984-12-07 1988-01-19 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
US4768080A (en) * 1984-12-07 1988-08-30 Kabushiki Kaisha Toshiba Semiconductor device having floating and control gates

Also Published As

Publication number Publication date
JPS629229B2 (en) 1987-02-27

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