JPS6469025A - Measuring method for quantity of charge-up in manufacturing process of semiconductor device - Google Patents
Measuring method for quantity of charge-up in manufacturing process of semiconductor deviceInfo
- Publication number
- JPS6469025A JPS6469025A JP62227189A JP22718987A JPS6469025A JP S6469025 A JPS6469025 A JP S6469025A JP 62227189 A JP62227189 A JP 62227189A JP 22718987 A JP22718987 A JP 22718987A JP S6469025 A JPS6469025 A JP S6469025A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- manufacturing process
- threshold voltage
- drain region
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measurement Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To measure electrical variation corresponding to the quantity of charged particles stored after a manufacturing process is executed, and to measure the quantity of charge-up by using a measuring device with a non- volatile storage cell having an electrically writable floating gate. CONSTITUTION:When a control gate 11 is brought to +V and a drain region 14 to 0V, an electric field is applied to a tunnel oxide film 22 in response to the tunnel oxide film 22 and the volume ratio of O/N/O, and tunnel currents flow. Consequently, electrons are injected to a floating gate 12 from the drain region 14. The threshold voltage Vth of an n-channel MOS transistor 2 is shifted to the positive side in response to the quantity of electrons injected at that time. When the control gate 11 is brought to -V and the drain region 14 to 0V, on the contrary, electrons are emitted from the floating gate 12, and the threshold voltage Vth of the transistor 2 is shifted to the negative side. Accordingly, the quantity of charge-up added in the manufacturing process of a semiconductor device can be measured, aiming at any shifting in either of the positive or negative direction of the threshold voltage of the n-channel MOS transistor 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62227189A JPS6469025A (en) | 1987-09-10 | 1987-09-10 | Measuring method for quantity of charge-up in manufacturing process of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62227189A JPS6469025A (en) | 1987-09-10 | 1987-09-10 | Measuring method for quantity of charge-up in manufacturing process of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6469025A true JPS6469025A (en) | 1989-03-15 |
JPH0577337B2 JPH0577337B2 (en) | 1993-10-26 |
Family
ID=16856885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62227189A Granted JPS6469025A (en) | 1987-09-10 | 1987-09-10 | Measuring method for quantity of charge-up in manufacturing process of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469025A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226436A (en) * | 1992-02-14 | 1993-09-03 | Sharp Corp | Device and method for evaluating p-n junction leakage current |
US6703641B2 (en) | 2001-11-16 | 2004-03-09 | International Business Machines Corporation | Structure for detecting charging effects in device processing |
US7709836B2 (en) | 2002-03-14 | 2010-05-04 | Infineon Technologies Ag | Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60147128A (en) * | 1984-01-11 | 1985-08-03 | Seiko Epson Corp | Semiconductor device |
-
1987
- 1987-09-10 JP JP62227189A patent/JPS6469025A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60147128A (en) * | 1984-01-11 | 1985-08-03 | Seiko Epson Corp | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226436A (en) * | 1992-02-14 | 1993-09-03 | Sharp Corp | Device and method for evaluating p-n junction leakage current |
US6703641B2 (en) | 2001-11-16 | 2004-03-09 | International Business Machines Corporation | Structure for detecting charging effects in device processing |
US7709836B2 (en) | 2002-03-14 | 2010-05-04 | Infineon Technologies Ag | Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge |
Also Published As
Publication number | Publication date |
---|---|
JPH0577337B2 (en) | 1993-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |