JPS6469025A - Measuring method for quantity of charge-up in manufacturing process of semiconductor device - Google Patents

Measuring method for quantity of charge-up in manufacturing process of semiconductor device

Info

Publication number
JPS6469025A
JPS6469025A JP62227189A JP22718987A JPS6469025A JP S6469025 A JPS6469025 A JP S6469025A JP 62227189 A JP62227189 A JP 62227189A JP 22718987 A JP22718987 A JP 22718987A JP S6469025 A JPS6469025 A JP S6469025A
Authority
JP
Japan
Prior art keywords
charge
manufacturing process
threshold voltage
drain region
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62227189A
Other languages
Japanese (ja)
Other versions
JPH0577337B2 (en
Inventor
Yukimasa Yoshida
Riichiro Shirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62227189A priority Critical patent/JPS6469025A/en
Publication of JPS6469025A publication Critical patent/JPS6469025A/en
Publication of JPH0577337B2 publication Critical patent/JPH0577337B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measurement Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To measure electrical variation corresponding to the quantity of charged particles stored after a manufacturing process is executed, and to measure the quantity of charge-up by using a measuring device with a non- volatile storage cell having an electrically writable floating gate. CONSTITUTION:When a control gate 11 is brought to +V and a drain region 14 to 0V, an electric field is applied to a tunnel oxide film 22 in response to the tunnel oxide film 22 and the volume ratio of O/N/O, and tunnel currents flow. Consequently, electrons are injected to a floating gate 12 from the drain region 14. The threshold voltage Vth of an n-channel MOS transistor 2 is shifted to the positive side in response to the quantity of electrons injected at that time. When the control gate 11 is brought to -V and the drain region 14 to 0V, on the contrary, electrons are emitted from the floating gate 12, and the threshold voltage Vth of the transistor 2 is shifted to the negative side. Accordingly, the quantity of charge-up added in the manufacturing process of a semiconductor device can be measured, aiming at any shifting in either of the positive or negative direction of the threshold voltage of the n-channel MOS transistor 2.
JP62227189A 1987-09-10 1987-09-10 Measuring method for quantity of charge-up in manufacturing process of semiconductor device Granted JPS6469025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62227189A JPS6469025A (en) 1987-09-10 1987-09-10 Measuring method for quantity of charge-up in manufacturing process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62227189A JPS6469025A (en) 1987-09-10 1987-09-10 Measuring method for quantity of charge-up in manufacturing process of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6469025A true JPS6469025A (en) 1989-03-15
JPH0577337B2 JPH0577337B2 (en) 1993-10-26

Family

ID=16856885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62227189A Granted JPS6469025A (en) 1987-09-10 1987-09-10 Measuring method for quantity of charge-up in manufacturing process of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6469025A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226436A (en) * 1992-02-14 1993-09-03 Sharp Corp Device and method for evaluating p-n junction leakage current
US6703641B2 (en) 2001-11-16 2004-03-09 International Business Machines Corporation Structure for detecting charging effects in device processing
US7709836B2 (en) 2002-03-14 2010-05-04 Infineon Technologies Ag Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147128A (en) * 1984-01-11 1985-08-03 Seiko Epson Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147128A (en) * 1984-01-11 1985-08-03 Seiko Epson Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226436A (en) * 1992-02-14 1993-09-03 Sharp Corp Device and method for evaluating p-n junction leakage current
US6703641B2 (en) 2001-11-16 2004-03-09 International Business Machines Corporation Structure for detecting charging effects in device processing
US7709836B2 (en) 2002-03-14 2010-05-04 Infineon Technologies Ag Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge

Also Published As

Publication number Publication date
JPH0577337B2 (en) 1993-10-26

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees