JPS5593591A - Driving system of semiconductor memory device - Google Patents
Driving system of semiconductor memory deviceInfo
- Publication number
- JPS5593591A JPS5593591A JP16511878A JP16511878A JPS5593591A JP S5593591 A JPS5593591 A JP S5593591A JP 16511878 A JP16511878 A JP 16511878A JP 16511878 A JP16511878 A JP 16511878A JP S5593591 A JPS5593591 A JP S5593591A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gates
- substrate
- silicon
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Abstract
PURPOSE:To make it possible to write, read and erase information with a low voltage and secure non-volatilization of information by extending a floating gate onto an insulating film for field to make the floating gate opposite to two kinds of control gate. CONSTITUTION:Oxide film 12 for field, an n<+>-type source region, an n<+>-type drain region, gate oxide film 15, silicon floating gate 16, silicon first control gate 171, silicon second control gate 172, and phsphosilicate glass film 18 are formed on p- type silicon semiconductor substrate 11. Then, capacity C1 is formed between substrate 11 and gate 15, and capacity C2 is formed between gates 16 and 171, and capacity C3 is formed between gates 16 and 172, and C3>0 is defined. For information write, a prescribed voltage for write is applied to gates 171 and 172, and due to the polarity, a positive or negative charge is injected to gate 16 from the substrate 11 side. For information read, a prescribed voltage is applied to one of gates 171 and 172, and the other is set to the same potential as substrate 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53165118A JPS6025030B2 (en) | 1978-12-29 | 1978-12-29 | Drive method of semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53165118A JPS6025030B2 (en) | 1978-12-29 | 1978-12-29 | Drive method of semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5593591A true JPS5593591A (en) | 1980-07-16 |
JPS6025030B2 JPS6025030B2 (en) | 1985-06-15 |
Family
ID=15806246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53165118A Expired JPS6025030B2 (en) | 1978-12-29 | 1978-12-29 | Drive method of semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6025030B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5823390A (en) * | 1981-07-30 | 1983-02-12 | Toshiba Corp | Semiconductor storage device |
JP2001168213A (en) * | 1999-12-03 | 2001-06-22 | Fujitsu Ltd | Semiconductor storage device and its manufacturing method |
-
1978
- 1978-12-29 JP JP53165118A patent/JPS6025030B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5823390A (en) * | 1981-07-30 | 1983-02-12 | Toshiba Corp | Semiconductor storage device |
JPH0217879B2 (en) * | 1981-07-30 | 1990-04-23 | Tokyo Shibaura Electric Co | |
JP2001168213A (en) * | 1999-12-03 | 2001-06-22 | Fujitsu Ltd | Semiconductor storage device and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS6025030B2 (en) | 1985-06-15 |
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