JPS5610942A - Inspection of memory retaining capacity of semiconductor nonvolatile memory - Google Patents

Inspection of memory retaining capacity of semiconductor nonvolatile memory

Info

Publication number
JPS5610942A
JPS5610942A JP8544279A JP8544279A JPS5610942A JP S5610942 A JPS5610942 A JP S5610942A JP 8544279 A JP8544279 A JP 8544279A JP 8544279 A JP8544279 A JP 8544279A JP S5610942 A JPS5610942 A JP S5610942A
Authority
JP
Japan
Prior art keywords
memory
retaining capacity
terminal
terminals
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8544279A
Other languages
Japanese (ja)
Inventor
Shigekazu Ihayazaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8544279A priority Critical patent/JPS5610942A/en
Publication of JPS5610942A publication Critical patent/JPS5610942A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To esmimate the memory retaining capacity of a semiconductor nonvolatile memory by applying a voltage higher than that used under normally using conditions to the control gate terminal of a memory transistor to positively dissipate charges in the floating gate. CONSTITUTION:A memory transistor is formed as follows. The transistor is made by forming a reverse conducting type diffused regions 3, 4 on a semiconductor substrate 1, coating the peripheral edge of the substrate 1 with a field oxide film 14, forming a gate oxide film 13 buried with a floating gate 9 and a control gate 10 from the ends of the regions 3, 4 to therebetween, and mounting terminals 2, 7, 8, 12 on the respective regions. When the memory retaining capacity is to be decided, the source and substrate terminals 7 and 2 are grounded, a drain terminal 8 is opened, and a bias voltage higher than that used under normally using conditions is applied between the terminal 2 and the control gate terminal 12. After it is retained at 125 deg.C in this state, it is lowered to 25 deg.C, and the capacity is decided by the reversing operation between the terminals.
JP8544279A 1979-07-05 1979-07-05 Inspection of memory retaining capacity of semiconductor nonvolatile memory Pending JPS5610942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8544279A JPS5610942A (en) 1979-07-05 1979-07-05 Inspection of memory retaining capacity of semiconductor nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8544279A JPS5610942A (en) 1979-07-05 1979-07-05 Inspection of memory retaining capacity of semiconductor nonvolatile memory

Publications (1)

Publication Number Publication Date
JPS5610942A true JPS5610942A (en) 1981-02-03

Family

ID=13858973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8544279A Pending JPS5610942A (en) 1979-07-05 1979-07-05 Inspection of memory retaining capacity of semiconductor nonvolatile memory

Country Status (1)

Country Link
JP (1) JPS5610942A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0395296A (en) * 1990-03-26 1991-04-19 Taiho Kogyo Co Ltd Conductive slippery resin material
JP2005191434A (en) * 2003-12-26 2005-07-14 Toyota Central Res & Dev Lab Inc Transistor, method for defining characteristics change model equation therefor and method for determining quality thereof
JP2015502000A (en) * 2011-11-09 2015-01-19 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． Method for testing data retention of non-volatile memory cells having floating gates

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0395296A (en) * 1990-03-26 1991-04-19 Taiho Kogyo Co Ltd Conductive slippery resin material
JPH0438792B2 (en) * 1990-03-26 1992-06-25
JP2005191434A (en) * 2003-12-26 2005-07-14 Toyota Central Res & Dev Lab Inc Transistor, method for defining characteristics change model equation therefor and method for determining quality thereof
JP4675043B2 (en) * 2003-12-26 2011-04-20 株式会社豊田中央研究所 Bipolar transistor, bipolar transistor characteristic variation model formula identification method, and bipolar transistor pass / fail judgment method
JP2015502000A (en) * 2011-11-09 2015-01-19 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． Method for testing data retention of non-volatile memory cells having floating gates

Similar Documents

Publication Publication Date Title
US3919711A (en) Erasable floating gate device
GB1447604A (en) Ferroelectric memory device
US4939558A (en) EEPROM memory cell and driving circuitry
US4084108A (en) Integrated circuit device
JPS57141969A (en) Nonvolatile semiconductor memory
US3877055A (en) Semiconductor memory device
JPS5610942A (en) Inspection of memory retaining capacity of semiconductor nonvolatile memory
EP0361121A3 (en) Semiconductor ic device with improved element isolating scheme
JPS56104473A (en) Semiconductor memory device and manufacture thereof
JPS56107575A (en) Manufacture of semicondutor device
JPS57130473A (en) Mos type semiconductor memory storage
JPS5739583A (en) Semiconductor device
JPS55111173A (en) Semiconductor memory device
JPS55153375A (en) Non-volatile semiconductor memory device
JPS5621375A (en) Semiconductor nonvolatile memory device
JPS5593591A (en) Driving system of semiconductor memory device
JPS57104264A (en) Semiconductor memory cell
JPS57162370A (en) Mos semiconductor memory device
JPS57160163A (en) Nonvolatile semiconductor memory
JPS5676559A (en) Semiconductor integrated circuit
JPS56108268A (en) Manufacture of non volatile semiconductor memory device
JPS5736868A (en) Manufacture of nonvolatile semiconductor memory device
JPS566464A (en) Semiconductor device and manufacture thereof
JPS5591177A (en) Semiconductor integrated circuit
JPS57121272A (en) Field effect transistor