JPS5536937A - Nonvolatile semiconductor storage unit - Google Patents

Nonvolatile semiconductor storage unit

Info

Publication number
JPS5536937A
JPS5536937A JP10879178A JP10879178A JPS5536937A JP S5536937 A JPS5536937 A JP S5536937A JP 10879178 A JP10879178 A JP 10879178A JP 10879178 A JP10879178 A JP 10879178A JP S5536937 A JPS5536937 A JP S5536937A
Authority
JP
Japan
Prior art keywords
insulating film
source
layer
drain
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10879178A
Other languages
Japanese (ja)
Other versions
JPS613113B2 (en
Inventor
Masanori Kikuchi
Saburou Yukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10879178A priority Critical patent/JPS5536937A/en
Publication of JPS5536937A publication Critical patent/JPS5536937A/en
Publication of JPS613113B2 publication Critical patent/JPS613113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Abstract

PURPOSE:To facilitate injection of a carrier in a suspended gate electrode by providing a conductive material layer on a part of the substrate surface working as source or drain or channel area. CONSTITUTION:A source area 8 and a drain area 7 conductive reversely to a semiconductor substrate 1 are provided in the neighborhood of main plane of the substrate 1; a suspended gate electrode 12 consisting of the first conductive material layer is provided by way of source and drain areas 8, 7 and the first gate insulating film 11 on the substrate surface in a channel area coming between the two above. The second gate insulating film 13 is provided on the electrode 12, and a control electrode 14 consisting of the second conductive layer is provided further thereon. Then, the third conductive material layer 6 consisting, for example, of multicrystal Si is provided on a part of the substrate surface working as source and drain areas 8, 7 or channel area, and a part of the insulating film 11 is formed thereon. Electron or hole will be injected from the layer 6 into the gate electrode 12 by electric field of the thin insulating film 11 on the layer 6, thus facilitating the storage action for write and erase.
JP10879178A 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit Granted JPS5536937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879178A JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879178A JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Publications (2)

Publication Number Publication Date
JPS5536937A true JPS5536937A (en) 1980-03-14
JPS613113B2 JPS613113B2 (en) 1986-01-30

Family

ID=14493564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879178A Granted JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Country Status (1)

Country Link
JP (1) JPS5536937A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189391A (en) * 1981-05-15 1982-11-20 Agency Of Ind Science & Technol Nonvolatile semiconductor memory integrated circuit
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189391A (en) * 1981-05-15 1982-11-20 Agency Of Ind Science & Technol Nonvolatile semiconductor memory integrated circuit
JPH0370879B2 (en) * 1981-05-15 1991-11-11 Kogyo Gijutsu Incho
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof
JPH0478189B2 (en) * 1986-05-14 1992-12-10 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS613113B2 (en) 1986-01-30

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